Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.232-232
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- 2010
The characteristics of Efficiency through HIT layer thickness
HIT 층 두께 변화를 통한 태양전지 효율 특성
- Kim, Moo-Jung (Sungkyunkwan University) ;
- Pyeon, Jin-Ho (Sungkyunkwan University) ;
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Yi, Jun-Sin
(Sungkyunkwan University)
- Published : 2010.06.16
Abstract
Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.