Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.231-231
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- 2010
Thermoelectric properties of multi-layered Bi-Te/In-Se/Bi-Te thin film deposited by RF magnetron sputter
- Kim, Hyo-Jung (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
- Kim, Kwang-Chon (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
- Choi, Won-Chel (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
- Jung, Kyoo-Ho (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST)) ;
- Kim, Hyun-Jae (School of Materials Science and Engineering, Seoul National University) ;
- Park, Chan (School of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Jin-Sang (Department of Electronic Materials Center materials research center, Korea Institute of Science and Technology(KIST))
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- 김진상
- Published : 2010.06.16
Abstract
Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric
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