• Title/Summary/Keyword: source material

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The Manufacture of Conductive paste for OTFT source & drain contacts Fabricated by Direct printing method (Direct Printing법에 의해 제작된 OTFT용 source & drain 전극용 전도성 페이스트 제조)

  • Lee, Mi-Young;Nam, Su-Yong;Kim, Seong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.384-385
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    • 2006
  • We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

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Impact of DPN on Deep Nano-technology Device Employing Dual Poly Gate (Nano-technology에 도입된 Dual Poly Gate에서의 DPN 공정 연구)

  • Kim, Chang-Jib;Roh, Yong-Han
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.296-299
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    • 2008
  • The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

Noise Source Identification and Countermeasure for the Noise of LPG Injector (LPC 인젝터의 소음원 규명 및 소음저감 대책)

  • Kim, Won-Jin;Park, Chong-Hyun;Kim, Sung-Dae;Lee, Byung-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.3
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    • pp.144-151
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    • 2002
  • This work focuses on finding out the noise source and the method of reducing the noise level of LPG(liquefied petroleum gas) fuel injector. The noise of LPG injector in operating condition is due to the impact between valve and valve seat. This study shows that if the revolution of engine is increased, the noise of LPG injector will be more serious but it is not nearly affected by the increment of fuel pressure. The source and transmission paths of noise are identified through the analysis of noise generation mechanism and noise spectrum. The sound absorbing material is tested to verify its efficiency of sound absorption thor the LPG injector. The effect of noise reduction of absorbing material is remarkable when the engine speed is high. Consequently two methods of reducing the noise level are suggested from the identified results. The one is to equip the absorbing material on the outer side of injector and the other is to coat with a soft material or equip a soft ring on the surface of impact.

Potential Water Retention Capacity as a Factor in Silage Effluent Control: Experiments with High Moisture By-product Feedstuffs

  • Razak, Okine Abdul;Masaaki, Hanada;Yimamu, Aibibula;Meiji, Okamoto
    • Asian-Australasian Journal of Animal Sciences
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    • v.25 no.4
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    • pp.471-478
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    • 2012
  • The role of moisture absorptive capacity of pre-silage material and its relationship with silage effluent in high moisture by-product feedstuffs (HMBF) is assessed. The term water retention capacity which is sometimes used in explaining the rate of effluent control in ensilage may be inadequate, since it accounts exclusively for the capacity of an absorbent incorporated into a pre-silage material prior to ensiling, without consideration to how much the pre-silage material can release. A new terminology, 'potential water retention capacity' (PWRC), which attempts to address this shortcoming, is proposed. Data were pooled from a series of experiments conducted separately over a period of five years using laboratory silos with four categories of agro by-products (n = 27) with differing moisture contents (highest 96.9%, lowest 78.1% in fresh matter, respectively), and their silages (n = 81). These were from a vegetable source (Daikon, Raphanus sativus), a root tuber source (potato pulp), a fruit source (apple pomace) and a cereal source (brewer's grain), respectively. The pre-silage materials were adjusted with dry in-silo absorbents consisting wheat straw, wheat or rice bran, beet pulp and bean stalks. The pooled mean for the moisture contents of all pre-silage materials was 78.3% (${\pm}10.3$). Silage effluent decreased (p<0.01), with increase in PWRC of pre-silage material. The theoretical moisture content and PWRC of pre-silage material necessary to stem effluent flow completely in HMBF silage was 69.1% and 82.9 g/100 g in fresh matter, respectively. The high correlation (r = 0.76) between PWRC of ensiled material and silage effluent indicated that the latter is an important factor in silage-effluent relationship.

HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices (고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장)

  • Bae, Sung Geun;Jeon, Injun;Yang, Min;Yi, Sam Nyung;Ahn, Hyung Soo;Jeon, Hunsoo;Kim, Kyoung Hwa;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.6
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    • pp.275-281
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    • 2017
  • AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

식용작물재배 LED 등기구 모듈개발

  • Song, Yong-Jong;Choe, Hyeon-Ho;Lee, Mun-Ho;Kim, Yeong-Pyo;Lee, Ho-Sik;Song, Min-Jong;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.284-284
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    • 2009
  • The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active

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The GaAs Leakage Current Characteristics of GaAs MESFET's using Source Ground Status (GaAs MESFET의 Source 접지상태에 따른 게이트 누설 전류 특성)

  • Won, Chang-Sub;Yu, Young-Han;Ahn, Hyung-Keun;Han, Deuk-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.263-266
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    • 2003
  • The gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. Next, the gate to drain current has been obtained with a ground source. The difference of two current has been tested and provide that the existence of another source to Schotuy barrier height against the image force lowering effect.

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Design of Rogowski coil to improve of current measurement sensitivity (전류측정감도 개선을 위한 로고우스키 코일의 설계)

  • Park, J.N.;Lee, C.;Jang, Y.M.;Kang, S.H.;Lim, K.J.;Na, D.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.609-612
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    • 2001
  • Rogowski coil is made having no ferromagnetic material in a core. So the coil cannot be driven into saturation. This result in that Rogowski coils may be calibrated at relatively low currents. and used with confidence at very high currents. However the lowest level of current that can be measured is limited by the sensitivity of the voltage measuring instrument and system noise. Therefore. geometrical effects were investigated in order to measure high sensitivity of low level current and the significant source of error was examined as well. In the results, the source of error was associated with coil designs. i.e. shape and uniformity of coil and a geometrical location of current source inside and outside of the Rogowski coil.

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Design of Rogowski coil to improve of current measurement sensitivity (전류측정감도 개선을 위한 로고우스키 코일의 설계)

  • Park, J. N.;Lee, C.;Jang, Y. M.;Kang, S. H.;Lim, K. J.;Na, D. H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.609-612
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    • 2001
  • Rogowski coil is made having no ferromagnetic material in a core. So the coil cannot be driven into saturation. This result in that Rogowski coils may be calibrated at relatively low currents, and used with confidence at very high currents. However the lowest level of current that can be measured is limited by the sensitivity of the voltage measuring instrument and system noise. Therefore, geometrical effects were investigated in order to measure high sensitivity of low level current and the significant source of error wa examined as well. n the results, the source of error was associated with coil designs, i.e. shape and uniformity of coil and a geometrical location of current source inside and outside of the Rogowski coil.

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Study on the Emission Properties of Visible Light Source using Energy Transfer (에너지전달을 이용한 가시광 Light Source의 발광특성에 관한 연구)

  • Gu, Hal-Bon;Kim, Ju-Seung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.486-489
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    • 2003
  • Red organic electroluminescent(EL) devices based on poly(N-vinylcarbazole)(PVK) and tris(8-hydroxyquinorine aluminum)($Alq_3$) doped with red emissive material, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran(DCJTB), poly(3-hexylthiophene)(P3HT), Rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3,6,7-tetrahydro-1H,5H-benzo-[i.j])quinolizin-8yl)vinyl-4H-pyran(DCM2) were fabricated. We examine the energy transfer from $Alq_3$ to DCJTB, P3HT, Rubrene and DCM2 by comparing between the PL and EL spectrum. The maximum peak PL intensities were achieved when the doping concentration of DCJTB, DCM2, P3HT and Rubrene has 5, 1, 0.5, 2wt%, respectively. The maximum luminance of device using DCJTB showed $594\;cd/m^2$ at 15V.

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