• Title/Summary/Keyword: source current density

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Organic Dispersion Type Back Light EL Display Device as a New Light Source (신광원 유기분산형 백라이트 EL 디스플레이 소자)

  • 임인호;박종주;장관식;정회승;박창엽
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.14 no.1
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    • pp.1-6
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    • 2000
  • In this paper, organic dispersion type back light EL(Electroluminescent) devices were manufactured using Ethyl hydroxy ethyl cellulose as organic binder, ZnS:Cu as phosphor powder and $BaTiO_3$ as dielectrics by screen printing method, which are focused on as a new light source. The properties of the fabricated organic dispersion type back light EL devices were showed $1.98[mA/\m^2]$ of current density, 0.075[W] of power consumption, 7.1[nF] of capacitance at $25[^{\circ}C]$, 100[V], 400[Hz], respectively. Also brightness of the fabricated device was revealed $20~110[cd/\m^2]$ at 50~150[V] and the change of color was shoed bluish green of x=0.1711, y=0.3676 which are color coordinate by CIE.

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A Light Incident Angle Stimulated Memristor Based on Electrochemical Process on the Surface of Metal Oxide

  • Park, Jin-Ju;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.174-174
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    • 2014
  • Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

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중성빔 식각을 이용한 Metal Gate/High-k Dielectric CMOSFETs의 저 손상 식각공정 개발에 관한 연구

  • Min, Gyeong-Seok;O, Jong-Sik;Kim, Chan-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.287-287
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    • 2011
  • ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

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Fabrication, Mesurement and Evaluation of Silicon-Gate n-well CMOS Devices (실리콘 게이트 n-well CMOS 소자의 제작, 측정 및 평가)

  • Ryu, Jong-Seon;Kim, Gwang-Su;Kim, Bo-U
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.5
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    • pp.46-54
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    • 1984
  • A silicon-gate n-well CMOS process with 3 $\mu$m gate length was developed and its possibility for the applications was discussed,. Threshold voltage was easily controlled by ion implantation and 3-$\mu$m gate length with 650 $\AA$ oxide shows ignorable short channel effect. Large value of Al-n+ contact resistance is one of the problems in fabrications of VLSI circuits. Transfer characteristics of CMOS inverter is fairly good and the propagation delay time per stage in ring oscillator with layout of (W/L) PMOS /(W/L) NMOS =(10/5)/(5/5) is about 3.4 nsec. catch-up occurs on substrate current of 3-5 mA in this process and critically dependent on the well doping density and nt-source to n-well space. Therefore, research, more on latch-up characteristics as a function of n-well profile and design rule, especially n+-source to n-well space, is required.

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Study on Pressurized Diesel Reforming System for Polymer Electrolyte Membrane Fuel Cell in Underwater Environment (수중 환경에서 고분자 전해질 연료전지(PEMFC) 공급용 수소 생산을 위한 가압 디젤 개질시스템에 관한 연구)

  • Lee, Kwangho;Han, Gwangwoo;Bae, Joongmyeon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.20 no.4
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    • pp.528-535
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    • 2017
  • Fuel cells have been spotlighted in the world for being highly efficient and environmentally friendly. A hydrogen which is the fuel of fuel cell can be obtained from a number of sources. Hydrogen source for operating the polymer electrolyte membrane fuel cell(PEMFC) in the current underwater environment, such as a submarine and unmanned underwater vehicles are currently from the metal hydride cylinder. However, metal hydride has many limitations for using hydrogen carrier, such as large volume, long charging time, limited storage capacity. To solve these problems, we suggest diesel reformer for hydrogen supply source. Diesel fuel has many advantages, such as high hydrogen storage density, easy to transport and also well-infra structure. However, conventional diesel reforming system for PEMFC requires a large volume and complex CO removal system for lowering the CO level to less than 10 ppm. In addition, because the preferential oxidation(PROX) reaction is the strong exothermic reaction, cooling load is required. By changing this PROX reactor to hydrogen separation membrane, the problem from PROX reactor can be solved. This is because hydrogen separation membranes are small and permeable to pure hydrogen. In this study, we conducted the pressurized diesel reforming and water-gas shift reaction experiment for the hydrogen separation membrane application. Then, the hydrogen permeation experiments were performed using a Pd alloy membrane for the reformate gas.

Experimental Techniques for Surface Science with Synchrotron Radiation

  • Jonhnson, R.L.;Bunk, O.;Falkenberg, G.;Kosuch, R.;Zeysing, J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.17-17
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    • 1998
  • Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.

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630 nm-OLED Accelerates Wound Healing in Mice Via Regulation of Cytokine Release and Genes Expression of Growth Factors

  • Mo, SangJoon;Chung, Phil-Sang;Ahn, Jin Chul
    • Current Optics and Photonics
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    • v.3 no.6
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    • pp.485-495
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    • 2019
  • Photobiomodulation (PBM) using organic light emitting diodes (OLEDs) surface light sources have recently been claimed to be the next generation of PBM light sources. However, the differences between light emitting diodes (LEDs) and OLED mechanisms in vitro and in vivo have not been well studied. In vivo mouse models were used to investigate the effects of OLED irradiation on cellular function and cutaneous wound healing compared to LED irradiation. Mice in the LED- and OLED-irradiated groups were subjected to irradiation with 6 J/㎠ LED and OLED (630 nm), respectively, for 14 days after wounding, and some mice were sacrificed for the experiments on days 3, 7, 10, and 14. To evaluate wound healing, we performed hematoxylin-eosin and Masson's trichrome staining and quantified collagen density by computerized image analysis. The results showed that the size of the wound, collagen density, neo-epidermis thickness, number of new blood vessels, and number of fibroblasts and neutrophils was significantly influenced by LED and OLED irradiation. The tissue levels of interleukin (IL)-β, IL-6 and tumor necrosis factor (TNF)-α were investigated by immunohistochemical staining. LED and OLED irradiation resulted in a significant increase in the tissue IL-β and IL-6 levels at the early stage of wound healing (P < 0.01), and a decrease in the tissue TNF-α level at all stages of wound healing (P < 0.05), compared to the no-treatment group. The expression levels of the genes encoding vascular endothelial growth factor and transforming growth factor-beta 1 were significantly increased in LED and OLED-irradiated wound tissue at the early stage of wound healing (P < 0.01) compared to the no-treatment group. Thus, OLED as well as LED irradiation accelerated wound healing by modulating the synthesis of anti-inflammatory cytokines and the expression levels of genes encoding growth factors, promoting collagen regeneration and reducing scarring. In conclusion, this suggests the possibility of OLED as a new light source to overcome the limitations of existing PBMs.

A New Manufacturing Technology and Characteristics of Trench Gate MOSFET (새로운 트렌치 게이트 MOSFET 제조 공정기술 및 특성)

  • Baek, Jong-Mu;Cho, Moon-Taek;Na, Seung-Kwon
    • Journal of Advanced Navigation Technology
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    • v.18 no.4
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    • pp.364-370
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    • 2014
  • In this paper, high reliable trench formation technique and a novel fabrication techniques for trench gate MOSFET is proposed which is a key to expend application of power MOSFET in the future. Trench structure has been employed device to improve Ron characteristics by shrinkage cell pitch size in DMOSFET and to isolate power device part from another CMOS device part in some power integrated circuit. A new process method for fabricating very high density trench MOSFETs using mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width and source and p=body region with a resulting increase in cell density and current driving capability and decrease in on resistance.

DESIGN OPTIMIZATION OF RADIATION SHIELDING STRUCTURE FOR LEAD SLOWING-DOWN SPECTROMETER SYSTEM

  • KIM, JEONG DONG;AHN, SANGJOON;LEE, YONG DEOK;PARK, CHANG JE
    • Nuclear Engineering and Technology
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    • v.47 no.3
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    • pp.380-387
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    • 2015
  • A lead slowing-down spectrometer (LSDS) system is a promising nondestructive assay technique that enables a quantitative measurement of the isotopic contents of major fissile isotopes in spent nuclear fuel and its pyroprocessing counterparts, such as $^{235}U$, $^{239}Pu$, $^{241}Pu$, and, potentially, minor actinides. The LSDS system currently under development at the Korea Atomic Energy Research Institute (Daejeon, Korea) is planned to utilize a high-flux ($>10^{12}n/cm^2{\cdot}s$) neutron source comprised of a high-energy (30 MeV)/high-current (~2 A) electron beam and a heavy metal target, which results in a very intense and complex radiation field for the facility, thus demanding structural shielding to guarantee the safety. Optimization of the structural shielding design was conducted using MCNPX for neutron dose rate evaluation of several representative hypothetical designs. In order to satisfy the construction cost and neutron attenuation capability of the facility, while simultaneously achieving the aimed dose rate limit (< $0.06{\mu}Sv/h$), a few shielding materials [high-density polyethylene (HDPE)eBorax, $B_4C$, and $Li_2CO_3$] were considered for the main neutron absorber layer, which is encapsulated within the double-sided concrete wall. The MCNP simulation indicated that HDPE-Borax is the most efficient among the aforementioned candidate materials, and the combined thickness of the shielding layers should exceed 100 cm to satisfy the dose limit on the outside surface of the shielding wall of the facility when limiting the thickness of the HDPE-Borax intermediate layer to below 5 cm. However, the shielding wall must include the instrumentation and installation holes for the LSDS system. The radiation leakage through the holes was substantially mitigated by adopting a zigzag-shape with concrete covers on both sides. The suggested optimized design of the shielding structure satisfies the dose rate limit and can be used for the construction of a facility in the near future.

Optimization of Operating Parameters and Components for Water Electrolysis Using Anion Exchange Membrane (음이온 교환막 알칼리 수전해를 위한 운전 조건 및 구성요소의 최적화)

  • Jang, Myeong Je;Won, Mi So;Lee, Kyu Hwan;Choi, Sung Mook
    • Journal of the Korean institute of surface engineering
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    • v.49 no.2
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    • pp.159-165
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    • 2016
  • The hydrogen has been recognized as a clean, nonpolluting and unlimited energy source that can solve fossil fuel depletion and environmental pollution problems at the same time. Water electrolysis has been the most attractive technology in a way to produce hydrogen because it does not emit any pollutants compared to other method such as natural gas steam reforming and coal gasification etc. In order to improve efficiency and durability of the water electrolysis, comprehensive studies for highly active and stable electrocatalysts have been performed. The platinum group metal (PGM; Pt, Ru, Pd, Rh, etc.) electrocatalysts indicated a higher activity and stability compared with other transition metals in harsh condition such as acid solution. It is necessary to develop inexpensive non-noble metal catalysts such as transition metal oxides because the PGM catalysts is expensive materials with insufficient it's reserves. The optimization of operating parameter and the components is also important factor to develop an efficient water electrolysis cell. In this study, we optimized the operating parameter and components such as the type of AEM and density of gas diffusion layer (GDL) and the temperature/concentration of the electrolyte solution for the anion exchange membrane water electrolysis cell (AEMWEC) with the transition metal oxide alloy anode and cathode electrocatalysts. The maximum current density was $345.8mA/cm^2$ with parameter and component optimization.