• 제목/요약/키워드: source current density

검색결과 310건 처리시간 0.025초

유도결합형 Ar 플라즈마의 압력에 따른 전기적 특성분석 (Analysis of Electrical Property on Inductively Coupled Ar Plasma for Gas Pressure)

  • 조주웅;이영환;김광수;허인성;최용성;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권3호
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    • pp.133-136
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    • 2004
  • Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

Effects of F-doping on perparation and superconducting characteristics of ag-sheathed Tl-1223 tapes

  • 정대영;김희권;이준호;차무경;김영철;이호섭
    • 한국초전도ㆍ저온공학회논문지
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    • 제2권1호
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    • pp.1-6
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    • 2000
  • The effects of partial substitution of fluorine on physical properties were studied in Ag-sheathes tapes of $Tl_{0.8}Pb_{0.2}Sr_{1.8}Ba_{0.2} Ca_{2.2}Cu_3O_yF_x (0{\leq}x{\leq}1)$ nominal compositions. The tapes were prepared using the powder-in-tube method incorporating an in-situ reaction method. $CuF_2$ was used as a source of F. It was found that F-doping in Tl-1223 system resulted in a decrease in formation temperatire of Tl-1223 phase. and thus significantly deteriorated their superconducting properties. Such disadvantages seem to originate by the fromation of non-beneficial phases such as SrF2 in the early stage of the powder preparation process.

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$n^+$-GaN/AlGaN/GaN HFET 제작을 위한 오믹접촉에 관한 연구 (Investigation of Ohmic Contact for $n^+$-GaN/AlGaN/GaN HFET)

  • 정두찬;이재승;이정희;김창석;오재응;김종욱;이재학;신진호;신무환
    • 한국전기전자재료학회논문지
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    • 제14권2호
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    • pp.123-129
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    • 2001
  • The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

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플라즈마 발생장치용 공진형 인버터 전력변환장치 (A Resonant Type Inverter Power Conversion Equipment for Plasma Generator)

  • 김주용;서기영;문상필;정장근;김영문
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
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    • pp.162-165
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    • 2003
  • A resonant type voltage source and power device and a control method using Pulse Density Modulation(PDM) power control and Pulse Width Modulation(PWM)voltage control for plasma sterilization are described. For the stability of discharge in the generating tube, it is desirable that the peak apply voltage is constant. The PDM power control is employed for sustaining the voltage constant at any generating tube input power. Moreover, to avoid the influence of input AC voltage fluctuation etc., PWM voltage control with generating tube peak voltage feedback is used. Both functions were confirmed by the experiment with inverter and generating tube. The effect of input synchronous PDM method for input current stabilizing is confirmed also.

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$LiNbO_3/Si_3N_4$ 구조를 이용한 MFIS 구조의 형성 및 특성 (Formations and properties of MFIS structure using $LiNbO_3/Si_3N_4$ structure)

  • 김용성;정상현;정순원;이남열;김진규;김광호;유병곤;이원재;유인규
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.221-224
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    • 2000
  • We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

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Finding Hidden Star Clusters Using the WISE

  • 류진혁;이재형;이명균
    • 천문학회보
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    • 제37권1호
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    • pp.57.2-57.2
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    • 2012
  • We present a survey for finding hidden star clusters using the WISE data. There are more than two thousand star clusters in the current catalogs of star clusters in the Milky Way Galaxy. However, there are still numerous star clusters remaining to be discovered, especially, along the Milky Way. The WISE, NIR to MIR all sky survey, is an efficient source to find star clusters obscured by dust along the Milky Way. Taking the advantage of the power of WISE, we survey a wide area at ${\mid}l{\mid}<30^{\circ}$ and ${\mid}b{\mid}<6^{\circ}$, toward to the central region of the Milky Way to find new star clusters. To find cluster candidates, we used two kinds of method: the visual inspection and the brightness density investigation. We will report the progress of this survey.

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Enhancement of Short-Circuit Current Density in Solar Cells via Reducing Recombination

  • 김관우;이강영;문병준;이원호;우한영;박태호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.484.1-484.1
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    • 2014
  • Bulk hetero junction (BHJ) polymer solar cells (PSCs) are one of the most promising fields as alternative energy source. Especially, the development of new p-type conjugated polymer is one of the main issues to get core technology. In this study, a series of varied ratio of 3,6-carbazole in poly[9-(heptadecan-9-yl)-9H-carbazole-2,7-diyl-alt-(5,6-bis-(octyloxy)-4,7-di(thiophen-2-yl)benzo-[1,2,5]-thia-diazole)-5,5-diyl] were designed and synthesized. These polymers have good solubility and film formability than PCDTBT which is well known promising material. Investigation of the photovoltaic properties of these new polymers indicated that polymer with 2% of 3,6-carbazole provided higher PCE (3.8% to 4.9%) with enhanced JSC, FF, VOC. We found origin of this improvement using several methods, one of which is reduced bimolecular recombination in polymer.

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Develpment of Textile-based Organic Solar Cell

  • 이승우;김영민;전지훈;이영훈;;최덕현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.460-460
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    • 2014
  • Organic photovoltaic cells (OPV) have been extensively studied due to their unique properties such as flexibility, light-weight, easy processability, cost-effectiveness, and being environmental friendly. These advantages make them an attractive candidate for application in various novel fields and promising development with new features. Photovoltaic cell-integrated textiles have greatly attractive features as a power source for the smart textile solutions, and OPV is most ideal form factor due to advantage of flexibility. In this study, we develop a textile-based OPV through various experimental methods and we suggest the direction for the design of the photovoltaic textile. We used a textile electrode and tried to various layouts for textile-based OPV. Finally, we determined the contact area by using Hertzian theory for the calculation of power conversion efficiency (PCE). Based on the results of calculation, the short circuit current density, Isc, was $13.11mA/cm^2$ under AM 1.5condition and the PCE was around 2.5%.

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오존 발생기용 공진형 인버터의 출력특성 (The output characteristics of resonant type inverter for ozone generator)

  • 강욱중;이현우;서기영;권순걸;문상필
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.139-142
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    • 2002
  • A resonant type voltage source and power device and a control method using Pulse Density Modulation(PDM) power control and Pulse Width Modulation(PWM) voltage control for Ozone Generator are described. For the stability of discharge in the generating tube, it is desirable that the peak apply voltage is constant. The PDM power control is employed for sustaining the voltage constant at any generating tube input power. Moreover, to avoid the influence of input AC voltage fluctuation etc., PWM voltage control with generating tube peak voltage feedback is used. Both functions were confirmed by the experiment with 6.5[kHz], 1.8[kW] inverter and generating tube. The effect of input synchronous PDM method for input current stabilizing is confirmed also.

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