Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation of Ohmic Contact for $n^+$-GaN/AlGaN/GaN HFET

$n^+$-GaN/AlGaN/GaN HFET 제작을 위한 오믹접촉에 관한 연구

  • 정두찬 (명지대학교 세라믹공학과) ;
  • 이재승 (경북대학교 전자전기공학부) ;
  • 이정희 (경북대학교 전자전기공학부) ;
  • 김창석 (한양대학교 전자 및 컴퓨터공학부) ;
  • 오재응 (한양대학교 전자 및 컴퓨터공학부) ;
  • 김종욱 (LG 전자기술원 RF 소자팀) ;
  • 이재학 (LG 전자기술원 RF 소자팀) ;
  • 신진호 (LG 전자기술원 RF 소자팀) ;
  • 신무환 (명지대학교 세라믹공학과)
  • Published : 2001.02.01
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Abstract

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

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