• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.550-551
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• 2013

Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

• Journal of The Korean Astronomical Society
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• v.46 no.1
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• pp.33-40
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• 2013

We investigate the dependence of the extended X-ray emission from the halos of optically luminous early-type galaxies on the small-scale (the nearest neighbor distance) and large-scale (the average density inside the 20 nearest galaxies) environments. We cross-match the 3rd Data Release of the Second XMMNewton Serendipitous Source Catalog (2XMMi-DR3) to a volume-limited sample of the Sloan Digital Sky Survey (SDSS) Data Release 7 with $M_r$ < -19.5 and 0.020 < z < 0.085, and find 20 early-type galaxies that have extended X-ray detections. The X-ray luminosity of the galaxies is found to have a tighter correlation with the optical and near infrared luminosities when the galaxy is situated in the low large-scale density region than in the high large-scale density region. Furthermore, the X-ray to optical (r-band) luminosity ratio, $L_X/L_r$, shows a clear correlation with the distance to the nearest neighbor and with large-scale density environment only where the galaxies in pair interact hydrodynamically with seperations of $r_p$ < $r_{vir}$. These findings indicate that the galaxies in the high local density region have other mechanisms that are responsible for their halo X-ray luminosities than the current presence of a close encounter, or alternatively, in the high local density region the cooling time of the heated gas halo is longer than the typical time between the subsequent encounters.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.333-338
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• 2011

In this work, we have fabricated the amorphous carbon (a-C:H) thin film by using unbalanced magnetron sputtering method with the magnetron source of inside/outside electromagnetic coils as the protective coating materials. We have investigated the tribological properties of amorphous carbon films prepared with various electromagnetic coil currents for the change of the plasma density, such as hardness, friction coefficient, adhesion, and surface roughness. Raman and HRTEM were used to study the microstructure of carbon films. In the result, the hardness and adhesion properties of a-C:H films were improved with increasing electromagnetic coil current due to the increase of the plasma density to the substrate. Thus, these results can be explained by the increase of $sp^2$ bonding and cluster number in the amorphous carbon film, related to the improved bombardment around substrate and the increased substrate temperature.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.3
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• pp.40-47
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• 1999

We have established a pulsed low-energy large-aIXTture electron beam(LELAEB) generation system with an energy of 2OO[keV], current of 1[A], pulse repetition rate of 200[Hz], and several tens of ${\mu}s$ pulse width. The system is characterized by a cold cathode that is simpler than the hot cathode. Electron beam does not need to be scanned over target objects because of large beam aIXTture of $300[\textrm{cm}^2]$. Electron source is secondary electrons that are generated when the ions from the glow discharge collide on the cathode surface. In this paper, We report about the design and manufacture of LELAEB generation system based on the theoretical analysis in order to study lXlssibility of increasing the efficiency of IELAEB accelerator. We also report on the possibility of large aperture beam current generation and the current density uniformity based on the experiIrental results.esults.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.217-225
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• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.102-102
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• 1996

This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.239.2-239.2
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• 2012

We report preliminary results of MOGABA project for monitoring total flux density, linearly polarized flux, and polarization angle at 22, 43 and 86GHz of Gamma-ray bright AGN (Active Galactic Nuclei) with KVN (Korean VLBI Network) 21-m radio telescopes. The project has been conducted in one year since May 2011 with an effective monitoring cycle of 1 week, observing four main objects (3C 454.3, BL Lac, 3C 273, and 3C 279). More objects were included in the source list when they had flared in Gamma-ray. Especially, we included a compact radio source at the Galactic center, SgrA* since Jan. 2012. In this paper, we report the current status of the project and preliminary results for the monitoring observations.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.