• Journal of Environmental Science International
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• v.9 no.4
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• pp.311-318
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• 2000

To improve $CO_2$pemselectivity, a modified silica membrane was prepared by chemical vapor deposition with tetraethoxysilane(TEOS)-ethanol-water, and TEOS-ethanol-water-HCI solution at 300-$600^{\circ}C$. The silica was effectively deposited in the mesopores of a ${\gamma}$-alumina film coated on a porous $\alpha$-alumina tube by evacuating the reactants through the porous wall. In this membrane, $CO_2$interacts, to some extent, with the pore wall, and $CO_2$/$N_2$selectivity then exceeds the value of the Knudsen diffusion mechanism, while the membrane derived from TEOS alone has no $CO_2$selectivity. The silica membrane prepared from TEOS-ethanol-water-HCI solution showed that $CO_2$permeance was $2.5$\times$10^{-7}mol/s^{-1}.m^{-2}.Pa^{-1} at 30{\circ}C$ and $CO_2$/$N_2$selectivity was approximately 3. The $CO_2$permeance and selectivity was improved by enlarging the surface diffusion with modification of chemical affinity of the silica pores.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• Journal of Pharmaceutical Investigation
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• v.39 no.2
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• pp.121-125
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• 2009

The objective of this study was to investigate the feasibility of applying the Intense Pulsed Light (IPL) as a tool to enhance the skin absorption of arbutin, a well-known skin-whitening agent. Arbutin solution or skin formulation was applied on the back of hairless mouse skin in vivo after IPL treatment, and then the skin deposition of arbutin was determined by HPLC. IPL treatment significantly increased the amount of arbutin in the skin after 6 hours when arbutin solution was applied 20 times. IPL also enhanced the skin deposition of arbutin when arbutin formulation was applied, although it was not significantly different. Significant increase of surface skin temperature was observed by IPL treatment, which might be a mechanism of the enhanced skin absorption of arbutin. These results suggest the feasibility of using IPL as a tool to increase the skin absorption of whitening agents, although further research needs to be conducted to understand its exact mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.115-116
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• 2008

The ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) and $Al_2O_3$ passivation layer for the Metal/Insulator/Ferroelectric/Semiconductor (MIFS) structure were deposited using spin coating and remote plasma atomic layer deposition (RPALD), respectively. A 2.5 ~ 3 wt % diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$: TrFE=70:30) in a DMF solution were prepared and deposited on silicon wafer at a optimized spin speed. After annealing in a vacuum ambient at 150 ~ $200^{\circ}C$ for 60 min, upper insulator layer were deposited at temperature ranging from 100 ~ $150^{\circ}C$ by RPALD. We described electrical and structural properties of MIFS fabricated by spin coating and RPALD methods.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Progress in Superconductivity
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• v.7 no.1
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• pp.52-57
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• 2005

[ $YBa_{2}Cu_{3}O_y$ ] superconducting films were prepared on $LaAlO_3$(100) single crystal substrate by spray pyrolysis method. The precursor solution was prepared by dissolving nitrate powders in de-ionized water. Both of ultrasonic and concentric nebulizers were used in order to generate fine droplets of precursor solution. C-axis oriented films were obtained at deposition temperature of $750\~850^{\circ}C$ and working pressure of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, films showed rough and porous surface morphology due to formation of enormous droplets, while smooth and dense films were obtained for concentric nebulizer. A transport $J_c$ value of $0.43\;MA/cm^2$ at 77 K and self field was achieved on $LaAlO_3$(100) single crystal substrate.

• Water Engineering Research
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• v.2 no.3
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• pp.179-185
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• 2001

The time consuming and expensive nature of experimental research on scouring processes caused by flowing water makes it attractive to develop numerical tools for the predication of the interaction of the fluid flow and the movable bed. In this paper the numerical simulation of scour by a wall jet is presented. The flow is assumed to be two-dimensional, and the alluvium is cohesionless. The solution process, repeated at each time step, involves simulation of a turbulent wall jet flow, solution of the convection-diffusion of sand concentration, and prediction of the bed deformation. For simulation of the jet flow, the governing equations for momentum, mass balance and turbulent parameters are solved by the finite volume method. The SIMPLE scheme with momentum interpolation is used for pressure correction. The convection-diffusion equation is solved for sediment concentration. A boundary condition for concentration at the bed, which takes into account the effect of bed-load, is implemented. The time rate of deposition and scour at the bed is obtained by solving the continuity equation for sediment. The shape and position of the scour hole and deposition of the bed material downstream of the hole appear realistic.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1144-1149
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• 2001

In this research, the fabrication of Si/SiO$_2$optical waveguide amplifier by FHD(Flame Hydrolysis Deposition) and Solution Doping was carried out. It was observed that the reduction of fluorescence was prevented up to 0.14 wt% Er whn 0.48 wt% Al was doped and the FWHA of $1.5mutextrm{m}$ fluorescence band increased by 5 nm as increasing amount of Al. Therefore from these results, we could confirm depressing concentration quenching of Er ions and increasing FWHM of fluorescence spectrum by addition of Al.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.