• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• Membrane and Water Treatment
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• 제9권5호
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• pp.327-334
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• 2018

The nano/micro composites with highly porous surface area have attracted of great interest, particularly the synthesis of porous and thin film sheets of high performance. In this paper, an easy method of cost-effective synthesis of thin film ceramic fiber membranes based on Hydroxyapatite, and activated carbon by turned into studied to be applied within the service-facilitated the transport of radioactive waste such as $^{90}Sr$, $^{137}Cs$ and $^{60}Co$) as activated product of radioisotopes from ETRR-2 research reactor and dissolved in 3M $HNO_3$, across a thin flat-sheet supported liquid membrane (TFSSLM). Radionuclides are transported from alkaline pH values. The presence of sodium salts in the aqueous media improves in $HNO_3$, the lowering of permeability because the initial $HNO_3$ concentration is improved. The study some parameters on the thin sheet ceramic supported liquid membrane. EDTA as stripping phase concentration, time of extraction and temperature were studied. The study of maximum permeability of radioisotopes for all parameters. The pertraction of a radioactive waste solution from nitrate medium were examined at the optimized conditions. Under the optimum experimental 98.6-99.9% of $^{90}Sr$, 79.65-80.3% of $^{137}Cs$ and $^{60}Co$ 45.5-55.5% in 90-110 min with were extracted in 10-30 min, respectively. The process of diffusion in liquid membranes is governed by the chemical diffusion process.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.455-456
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• 2007

Optically transparent, highly conductive coating have been major theme of thin film science efforts for some years. In this work, t-MWNT(thin Multi-walled Carbon Nanotubes) are acid treated, then the stable dispersion of t-MWNTs in polar solvent such as alcohols, was achieved by sonication. The transparent conducting films are prepared using the one component solution of t-MWNT/epoxy binder via spray coating on glass substrate. The characterization of acid treated t-MWNTs was performed by Raman spectrometer. The opto-electrical properties of conducting films are analyzed by the binder concentration, and the effect of co-solvent on the compatibility and dispersibility of one component t-MWNT/epoxy binder solutions are discussed.

• 센서학회지
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• 제19권3호
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.315-318
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• 2002

Light emitting thin film structures based on organic luminophors embedded in porous alumina matrixes are discussing. The optical properties of the luminophors in a matrix differ greatly from their properties in usual crystalline state or in a solution and they depend on the concentration of luminophors molecules of up to 10-2 mol/l. Successful experiments on filling of pores with organic luminophors and the investigation of their luminescent and optical properties were carried out.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.207.1-207.1
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• 2015

차세대 디스플레이 소자로서 TAOS TFT (transparent amorphous oxide semiconductor Thin Film Transistor)가 주목 받고 있다. 또한, 최근에는 값 비싼 전자 제품을 저렴하고 간단히 처분 할 수 있는 시스템으로 대신 하는 연구가 진행되고 있다. 그중, cellulose-fiber에 전기적 시스템을 포함시키는 e-paper에 대한 관심이 활발하다. cellulose fiber는 가볍고 깨지지 않으며 휘는 성질을 가지고 있다. 가격도 저렴하고 가공이 용이하여 차세대 기판의 재료로서 주목받고 있다. 하지만, cellulose-fiber 위에는 고온의 열처리공정과 고품질 박막 성장이 어려워서 TFT 제작에 어려움을 겪고 있다. 이러한 문제를 해결하기 위해서 산화물 반도체를 이용하여 TFT를 제작한 사례가 보고되고 있다. 또한, 채널 물질 뿐만 아니라 cellulose fiber에도 다른 물질을 첨가하거나 증착하여 전기적 화학적 특성을 개선시킨 사례도 많이 보고되고 있다. 본 연구에서는 가장 저품질의 용지로 알려진 신문지와 A4용지를 gate dielectric을 이용하여서 a-IGZO TFT를 제작하였다. 하지만, cellulose fiber로 만들어진 TFT의 경우에는 고온의 열처리가 불가능 하다. 따라서 저온에서 높을 효율은 보이는 microwave energy를 이용하여 열처리를 진행하였다. 추가적으로 저품질의 종이의 특성을 개선시키기 위해서 high-k metal-oxide solution precursor를 첨가 하여 TFT의 특성을 개선시켰다. 결과적으로 cellulose fiber에 metal-oxide solution precursor을 첨가하는 공정과 micro wave를 조사하는 방법을 사용하여 100도 이하에서 cellulose fiber를 저렴하고 우수한 성능의 TFT를 제작에 성공하였다.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Journal of Information Display
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• 제6권4호
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• pp.1-5
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• 2005

Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.