• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 한국재료학회지
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• 제19권1호
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• pp.50-53
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• 2009

Multi-walled carbon nanotubes (MWNTs) were synthesized on different substrates (bare Si and $SiO_2$/Si substrate) to investigate dye-sensitized solar cell (DSSC) applications as counter electrode materials. The synthesis of MWNTs samples used identical conditions of a Fe catalyst created by thermal chemical vapor deposition at $900^{\circ}C$. It was found that the diameter of the MWNTs on the Si substrate sample is approximately $5{\sim}10nm$ larger than that of a $SiO_2$/Si substrate sample. Moreover, MWNTs on a Si substrate sample were well-crystallized in terms of their Raman spectrum. In addition, the MWNTs on Si substrate sample show an enhanced redox reaction, as observed through a smaller interface resistance and faster reaction rates in the EIS spectrum. The results show that DSSCs with a MWNT counter electrode on a bare Si substrate sample demonstrate energy conversion efficiency in excess of 1.4 %.

• 태양에너지
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• 제11권1호
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• pp.61-68
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• 1991

본 연구는 장방형 발열체 주위에서의 열전달 특성을 고려하기 위하여 주위유체가 공기인 정상, 층류 상태하에서 수평단열판에 등온 사각비임이 부착된 경우 발열체 주위에서의 자연대류 열전달현상을 단열판의 경사각과 Rayleigh수를 변수로 하여 실험적으로 고찰하였다. 단열판의 경사각 ${\theta}$를 변화시킴으로써 비임의 수평 및 수직표면에 의해 형성되는 열상승류의 영향에 따라 서로 다른 온도장과 유동장이 형성되었고 ${\theta}=45^{\circ}$인 경우의 직각모서리를 제외한 나머지 직각모서리에서 가열된 상승류의 상호작용에 의해 국소 Nusselt수가 증가하였다. Rayleigh수가 증가함에 따라 ${\theta}=90^{\circ}$인 경우 $X_2$표면에서의 Thermal depression 현상이 가장 현저하였으며, ${\theta}=-45^{\circ}$인 경우 $X_1$ 표면에서의 유동 정체현상이 가장 심하였다. 단열판의 경사각을 변화시켜 실험 고찰한 결과 전평균 Nusselt수는 ${\theta}=45^{\circ}$인 경우 최대, ${\theta}=-45^{\circ}$인 경우 최소였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.335.2-335.2
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• 2016

The fixed negative charge of the Al2O3 passivation layer gives excellent passivation performance for both n-type and p-type silicon wafers. For the best passivation quality, annealing is known to be a prerequisite step and a lot of studies concerning annealing effect on the passivation characteristics have been performed. Meanwhile, for manufacturing a crystalline silicon solar cell, firing process is applied to the Al2O3 passivation layer. Therefore, study on not only annealing effect but also on firing effect is necessary. In this work, Al2O3 passivation performance (minority carrier lifetime) for p-type silicon wafer was evaluated with Quasi-Steady-State Photoconductance(QSSPC) measurement after annealing at different temperatures. For the samples which showed different aspects, C-V measurement was performed for the cause - whether it is due to the chemical effect or field-effect. The change in Al2O3 passivation property after firing processes was investigated and the mechanism for the change could be estimated.

• 조명전기설비학회논문지
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• 제23권1호
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• pp.176-181
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• 2009

본 연구에서는 염료 태양전지(Dye-sensitized solar cells; DSCs)에 적용하기 위한 나노-다공질의 FTO(F:$SnO_2$) 재료를 Sol-gel 연소법을 이용하여 다양한 열처리 온도를 변수로 제작하였으며, 각각의 결과물들에 대한 물성적 특성을 고찰하였다. FTO nano-powder는 SnCl4-98.0[%]와 HF-$48{\sim}51$[%]가 교반된 것에 NH4OH를 Sol-gel법의 촉매로 사용하였고, 첨가재로써 Ketjen Black을 사용하였다. 얻어진 결과물에 대한 XRD 측정 결과, 열처리 온도가 상승함에 따라 $SnO_2$의 회절각인 25.6[$^{\circ}$]($2{\Theta}$) 부근에서 강한 peak값이 나타났다. XPS 측정 결과에 의하면, 각각의 F1s, Sn 3d, O 1s의 binding energy는 682, 484, 528[eV]에서 광전자 피크가 확인되었다. 열처리 온도가 증가함에 따라 표면적이 감소하며, pore size는 증가함을 BET측정 결과로 알 수 있었다. 본 실험을 통해 열처리 온도조절에 따른 나노-다공성 FTO powder의 특성제어가 용이함이 확인되었고, Sol-gel 연소법에 의한 간단하고 효과적인 방법으로 나노-다공성 소재의 제작이 가능하여, DSCs의 응용에도 유용할 것으로 기대된다.

• KIEAE Journal
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• 제14권1호
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• pp.15-22
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• 2014

Among the various building envelope elements, the glass area takes up the largest portion in the office building design. However, a large area of glass can cause problems such as excessive solar radiation, thermal comfort, and glare. Thus it is important to install the glass area to an appropriate level, and control solar radiation and inflow of daylight with blind devices. This study aims to improve the visual performance of the work plane through the automatic control of the venetian blinds. A total of eight kinds of control strategies were chosen; Case 1 does not control the blinds, Case 2 with the blind slats fixed at the angle of 0 degree, Case 3 to 6 using the existing blind control programs, and Case 7 and 8 with improved blind control. Case 3 with 90 degrees had the best energy performance, but the average indoor illuminance was 113lux, which is below the standards. Cases 4 and 5 showed higher levels of interior daylight illuminance with the average of 281lux and 403lux respectively. However, the fixed angles may have difficulties controlling excessive direct sunlight coming into the room and may cause glare. Cases 6 and 7 used sun tracking angle control and cut-off angle control, and the average interior illuminance was measured 250lux and 385lux respectively. Case 8 used the cut-off angle control in an hourly manner, satisfying the standard illuminance of 400lux with an average interior illuminance of 561lux. It was evaluated to be the best method to control direct solar radiation and to guarantee proper level of interior illumination.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 디지털융복합연구
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• 제14권1호
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• pp.407-412
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• 2016

본 연구에서 제안하는 디자인은 아동의 자유로운 공상과 체험적 습득에 대한 고민을 가지고 있으며, 외형적으로는 태양광에너지를 활용하고 인간친화적인 소프트웨어를 포함하는 융복합적이며, 환경친화적인 놀이기구를 주제로 한 공공디자인에 관한 것이다. 모듈화된 태양광발전장치는 몇 가지 단점에도 불구하고 범용성을 갖추어 태양과 생명의 관계라는 콘셉트를 구현하기 적절하였다. 놀이는 아동에게는 그 자체로 하나의 세계이다. 그러므로 사실적 형태보다는 공상을 자극할만한 유연한 어떤 것이어야 했고, 태양광이 단순히 전력공급원으로 사용되는 것을 넘어 기구를 매개로 태양과 아동이 함께 호흡하는 것을 상상해 보았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.99.1-99.1
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• 2012

The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.