• Title/Summary/Keyword: small signal parameters

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Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.2
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    • pp.88-93
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    • 2007
  • In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

Characterization and Determination of Small Signal Parameters of Bipolar Transistors (바이폴라 트랜지스터 소신호 변수의 결정 및 특성에 관한 연구)

  • 배동건;정상구;최연익;조영철
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.1
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    • pp.51-58
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    • 1990
  • NPN Si bipolar transistors with two different emitter widths are designed and fabricated. The effects of the emitter width on the small signal parameters of BJTs are measured and discussed. A new ac method for determining the current gain, the cut off frequency and the internal capacitances from the input impedance circle characteristics as a function of the varied external series resistances is presented. This method allows an accurate characterization of bipolar transistors with high current gain. The variation of the I-V curves of the emitter junction with the reverse collector junction voltages is discussed from the changes in the intsrinsic base resistances.

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Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

  • Ko, Pil-Seok;Park, Hyung-Moo
    • Journal of electromagnetic engineering and science
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    • v.13 no.2
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    • pp.127-133
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    • 2013
  • We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

Performance Analysis and Evaluation of Deployment in Small Cell Networks

  • Zheng, Kan;Li, Yue;Zhang, Yingkai;Jiang, Zheng;Long, Hang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.9 no.3
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    • pp.886-900
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    • 2015
  • Small cells are deployed in Heterogeneous Networks (HetNet) to improve overall performance. These access points can provide high-rate mobile services at hotspots to users. In a Small Cell Network (SCN), the good deployment of small cells can guarantee the performance of users on the basis of average and cell edge spectrum efficiency. In this paper, the performance of small cell deployment is analyzed by using system-level simulations. The positions of small cells can be adjusted according to the deployment radius and angle. Moreover, different Inter-Cell Interference Coordination (ICIC) techniques are also studied, which can be implemented either in time domain or in frequency domain. The network performances are evaluated under different ICIC techniques when the locations of Small evolved Nodes (SeNBs) vary. Simulation results show that the average throughput and cell edge throughput can be greatly improved when small cells are properly deployed with the certain deployment radius and angle. Meanwhile, how to optimally configure the parameters to achieve the potential of the deployment is discussed when applying different ICIC techniques.

(GaN MODFET Large Signal modeling using Modified Materka model) (Modified Materka model를 이용한 GaN MODFET 대신호 모델링)

  • 이수웅;범진욱
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.217-220
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    • 2001
  • CaN(gallium nitride) MODFET(modulation doped field effect transistor) large signal model was studied using Modified Materka-Kacprzak large signal MODFET model. using the Dambrine's method[3, at 45MHz-40㎓, Measured S-parameter and DC characteristics. based on measuring results, small signal parameter extraction was conducted. by the cold FET[4]method, measured parasitic elements were de-embedding. Extracted small signal parameters were modeled using modified Materka model, a sort of fitting function reproduce measuring results. to confirm conducted large signal modeling, modeled GaN MODFET's DC, S-parameter and Power characteristics were compared to measured results, respectively. by results were represented comparatively agreement, this paper showed that modified Materka model was useful in the GaN MODFET large signal modeling.

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Parameter Extraction of InGaP/GaAs HBT Small-Signal Equivalent Circuit Using a Genetic Algorithm (유전자 알고리즘을 이용한 InGaP/GaAs HBT 소신호 등가회로 파라미터 추출)

  • 장덕성;문종섭;박철순;윤경식
    • Journal of the Korean Institute of Intelligent Systems
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    • v.11 no.6
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    • pp.500-504
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    • 2001
  • The present approach based on the genetic algorithm with improved selections of bonds was adopted to extract a bridged T equivalent circuit elements of $\times10\mu m^2$InGaP/GaAs HBT. the small-signal model parameters were extracted using the genetic algorithm from S-parameters measured at different frequencies under multiple forward-active biases, which demonstrate physically meaningful values and consistency. The agreement between the measured and modeled S-parameters is excellent over the frequency range of 2 to 26.5GHz.

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Design of MMIC SPST Switches Using GaAs MESFETs (GaAs MESFET을 이용한 MMIC SPST 스위치 설계)

  • 이명규;윤경식;형창희;김해천;박철순
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.4C
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    • pp.371-379
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    • 2002
  • In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

Gabor Pulse-Based Matching Pursuit Algorithm : Applications in Waveguide Damage Detection (가보 펄스 기반 정합추적 알고리즘 : 웨이브가이드 결함진단에서의 응용)

  • 선경호;홍진철;김윤영
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.969-974
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    • 2004
  • Although guided-waves are very efficient for long-range nondestructive damage inspection, it is not easy to extract meaningful pulses of small magnitude out of noisy signals. The ultimate goal of this research is to develop an efficient signal processing technique for the current guided-wave technology. The specific contribution of this investigation towards achieving this goal, a two-stage Gabor pulse-based matching pursuit algorithm is proposed : rough approximations with a set for predetermined parameters characterizing the Gabor pulse and fine adjustments of the parameters by optimization. The parameters estimated from the measured signal are then used to assess not only the location but also the size of a crack existing in a rod. To validate the effectiveness of the proposed method, the longitudinal wave-based damage detection in rods is considered. To estimate the crack size, Love's theory for the dispersion of longitudinal waves is employed.

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Development and Control of a Small BLDC Motor for Entertainment Robots

  • Lee, Jong-Bae;Park, Chang-Woo;Rhyu, Sae-Hyun;Choi, Jun-Hyuk;Chung, Joong-Ki;Sung, Ha-Gyeong
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1500-1505
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    • 2004
  • This paper presents the design and control of a small Brushless DC (BLDC) Motor for entertainment robots. In order to control the developed BLDC motor, Adaptive Fuzzy Control (AFC) scheme via Parallel distributed Compensation(PDC) is developed for the multi- input/multi-output plant model represented by the Takagi-Sugeno(TS) model. The alternative AFC scheme is proposed to provide asymptotic tracking of a reference signal for the systems with uncertain or slowly time-varying parameters. The developed control law and adaptive law guarantee the boundedness of all signals in the closed-loop system. In addition, the plant state tracks the state of the reference model asymptotically with time for any bounded reference input signal. The suggested design technique is applied to the velocity control of a developed small BLDC motor for entertainment robots.

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Identification of Excitation System Model Parameters from the Test of Switching from MVR Mode to AVR Mode (MVR모드에서 AVR모드로의 절환에 의한 여자계 모델정수 결정)

  • Kim, Dong-Joon;Moon, Yung-Hwan;Choi, Kyung-Sun;Lyu, Seung-Hhon;Song, Seok-Ha;Lee, Heung-Taek
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.91-94
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    • 1996
  • A simulation procedure was developed for identifying Yungnam unit 2 excitation model parameters to improve the accuracy of stability simulation of KEPCO. First, generator model parameters are derived by using modified load rejection technique from measured load rejection test. For identifying excitation model parameters, switch was changed from MVR mode to AVR mode in Yungnam unit 2 excitation system instead of applying to a small step to the voltage reference($V_{ref}$) because of saving time and efforts, assuming the test result would show coincided result with applying to a small step to the $V_{ref}$. However, it was found that the response of switching from MVR to AVR is greatly different from it of applying small signal to the $V_{ref}$. A simulation procedure was needed to take into accounts of real AVR component status before and after switching from MVR to AVR. This paper reports the procedure which duplicated the measured response and addresses the merits of this test on conventional AVR step test.

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