• Nuclear Engineering and Technology
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• v.23 no.1
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• pp.49-55
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• 1991

The microstructure and pore characteristics have been studied on the sintered UO$_2$pellet which was made of the UO$_2$powder manufactured via AUC process. The open porosity decrease with the density and is nearly annihilated above the density of 10.45 g/㎤. The round pore smaller than 3 $\mu$m exist In all densities. The large and elongated pore appears additionally In low density The pore in low density is more elongated than the pore in high density The distribution of the pore area versus the pore size is monomodal and shows its peak on the pore size of 2 to 3 $\mu$m. As the density decreases, the related area of large pore Increases.

• Nuclear Engineering and Technology
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• v.31 no.3
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• pp.335-343
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• 1999

The effects of N $b_2$ $O_{5}$ and oxygen potential on the densification and grain growth of U $O_2$ fuel have been investigated.0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$fuel pellets were sintered at 1$700^{\circ}C$ for 4 hours in sintering atmospheres which have various ratios of $H_2O$ to $H_2$ gas. Compared with those of undoped U $O_2$ pellets, the sintered density and grain size of the 0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$ pellet increase under the $H_2O$/ $H_2$ gas ratio of 5.0$\times$10$^{-3}$ to 1.0$\times$10$^{-2}$ and under the $H_2O$/ $H_2$gas ratio of 5.0$\times$10$^{-3}$ to $1.5\times$10$^{-2}$ , respectively. The sintering of U $O_2$fuel pellets containing 0.1 wt% to 0.5 wt% N $b_2$ $O_{5}$ was carried out at 168$0^{\circ}C$ for 4 hours. The enhancing effect of N $b_2$ $O_{5}$ on the sintered density and grain size becomes larger as the N $b_2$ $O_{5}$ content increases. The solubility limit of N $b_2$ $O_{5}$ in U $O_{2}$ seems to be between 0.3 wt% and 0.5 wt%, and beyond the solubility limit the second phase whose composition corresponds near to N $b_2$U $O_{6}$ is precipitated on grain boundary. The enhancement of densification and grain growth in U $O_2$ is attributed to the increased concentration of a uranium vacancy which is formed by the interstitial N $b^{4+}$ ion in the U $O_2$ lattice.

• Resources Recycling
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• v.18 no.2
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• pp.69-76
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• 2009

Alumina powder was prepared from heat-treatment of artificial marble waste fine aggregate containing $Al(OH)_3$ for the purpose of the feasibility of its recycling. Artificial marble waste was heat-treated between $500^{\circ}C$ and $1000^{\circ}C$ and XRD, BET surface area, BJH pore size distribution and adsorption of As were analyzed for heat-treated powder. It was found that the adsorption efficiency of As was significantly affected by phase composition of alumina powder rather than its physical characteristic. Heat-treated powder compact was sintered to produce the pellet. Alumina pellet with porosity more than 60% could be obtained after sintering below $1200^{\circ}C$ and also the addition of glass powder as a sintering aid had a positive effect on lowering sintering temperature, led to the high porosity near 60% and adsorption of As over 60% even at $900^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.7-13
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• 2007

We synthesized and investigated $La_{0.75}Sr_{0.25}FeO_3$ by Glycine Nitrate Process(GNP) method used as cathode materials for SOFC(solid oxide fuel cell). Optimized amount of glycine is 3.17 mol. ICP elemental composition analysis indicated that the stoichiometry of the synthesized powders have nearly nominal values. SEM images and XRD patterns reveal that the synthesized powder has uniform size distribution and high degree of crystallinity. The sample powders were isostatically pressed to form a pellet. The green body was sintered at $1200^{\circ}C$ and the relative density of the sintered specimens were measured by Archimedes mettled. We measured electrochemical performance of LSF by AC impedance spectroscopy. Resistance of LSF shows lower value than that of LSM throughout all temperature region. The anode-supported solid oxide fuel cell showed a performance of $342mW/cm^2(0.7V,\;488mA/cm^2)$ at $750^{\circ}C$. The electrochemical characteristics of the single cell were examined by at impedance method.

• Nuclear Engineering and Technology
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• v.15 no.3
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• pp.197-206
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• 1983

The slightly hyperstoichiometric uranium dioxide, i.e. U $O_{2.005}$ and U $O_{2.01}$ within a range of the requirement for the use of a nuclear fuel, were sintered directly in an atmosphere of $CO_2$/CO mixture without any succeeding reduction process. The kinetics of sintering in the late stage were investigated for various O/U ratios. A sintering diagram, which show the relation of Temperature-Time-Density-Grain size, was established for each O/U ratio. Only by controlling the oxygen partial pressure in the sintering atmosphere, U $O_2$ pellet could be sintered very easily at low temperature 1050$^{\circ}$～120$0^{\circ}C$ with a density above 95% T.D. and average grain size above 7${\mu}{\textrm}{m}$. It was found that the rate of grain growth follows D=(Kt)$^{1}$4/ in the late stage of sintering. And the activation energies for grain growth in the final sintering stage were found to be 75, 64 and 62kca1/mo1 for U $O_{2.005}$, U $O_{2.01}$ and U $O_{2.10}$, respectively. Although no significant differences are obtained between the activation energies for different O/U ratios, the sinterability is enhanced considerably with increasing the oxygen partial pressure in the sintering atmosphere.tmosphere.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.