Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth and Effect of Thermal Annealing for ZnO Thin Film by Pulsed Laser Deposition

펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 열처리 효과

  • Published : 2004.05.01
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Abstract

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

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References

  1. J. Lumin. v.75 Doped ZnO thin films as anode materials for organic light emitting diodes K.Vanheusden;C.H.Seuger;W.L.Wareen;M.J.Hampden-smith
  2. semicond. sciechnol. v.10 Violet luminescience emitted from ZnO films deposited on Si substrate by rf magnetron sputtering M.H.Koch;P.Y.Tinbrell;R.N.Lamb https://doi.org/10.1088/0268-1242/10/11/015
  3. Applied Surface Science v.197/198 Fabrication of semiconducting ZnO nanobelts using a halide source and their photoluminescience properties Masanri Sugiura;Yuu Nakashima;Tajuya Nakasaka https://doi.org/10.1016/S0169-4332(02)00372-0
  4. Japan J. Appl. Phys. v.29 no.1 Temperature dependence of excitionic luminescience from anocrystalline ZnO films Kodata,M.;Kondo,C.;Ikeda,T.;Kasqunami https://doi.org/10.7567/JJAPS.29S1.159
  5. J. Appl. Phys. v.62 no.6 Characterization of sputtered ZnO thin film as sensor and actuator for diamond AFM probe Wu,M.S.;Az uma,A.;Kawabata https://doi.org/10.1063/1.339458
  6. J. Appl. Phys. v.44 Deposition of highly oriented ZnO films by spray pyrolysis and their structural, optical and electrical charactrization Mitsuyu,T.;Ono,S.;Wasa,K. https://doi.org/10.1063/1.1662307
  7. Applied Surface Science v.197/198 Deposition of ZnO films by pulsed laser deposition at room temperature Yoshiki Nakata;Tatsuo Okada;MItsuo Maeda https://doi.org/10.1016/S0169-4332(02)00426-9
  8. J. Appl. Phys. v.73 Crystal growth of undoped ZnD films on Si substrates under different sputtering conductions Syuichi Takada
  9. Solar Energy Materials and Solar Cells v.28 Influence of the annealing conductions on the properties of ZnO thin films Ambia,M.G.;Islam,M.N.;Obaidul Hakim M. https://doi.org/10.1016/0927-0248(92)90002-7
  10. Thin Solid Films v.213 The growth and annealing of single crystalline ZnO films by loe press TCVD Labeau,M.;Rey,P.;Joubert,J.C.;Dela-bouglise,G. https://doi.org/10.1016/0040-6090(92)90480-Y
  11. Thin Solid Films v.124 A simple and novel route for the preparation of ZnO nanodors Tammenmaa,M.;Niinisto,L. https://doi.org/10.1016/0040-6090(85)90254-8
  12. Elements of Z-ray Diffractions B.D.Cullity
  13. J. Appl. Phys. v.84 Influence of synthesis procedure on the formation and properties of zinc oxide Y.Chen;D.M.Bagnall;H.J.Koh;T.Yao https://doi.org/10.1063/1.368595
  14. J. Phys. Soc. v.20 Electron radition damage in Cadium-selenide crystal at liquid-helium temperature H.Fujita https://doi.org/10.1143/JPSJ.20.109
  15. Physica. v.34 Far-infrared optical bsorption of $Fe^{2+}$ in ZnSe Y.P.Varshni https://doi.org/10.1016/0031-8914(67)90062-6
  16. Phys. Stat. Sol. v.56 Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon K.Hummer https://doi.org/10.1002/pssb.2220560124
  17. J. Phys. Soc. Jpn. v.33 no.6 The band structure of ZnO calculated by the pseudopotential method J.:.Shay;J.H.Wernick https://doi.org/10.1143/JPSJ.33.1561
  18. Phys. Rev. B7 v.195 The optical properties of ZnO thin films D.D.Sell;S.E.Stokowski;R.dingle;J.V.Dilorenzo
  19. Phys. Rev. Lett. v.14 no.64 Infrared absorption and Luminescence spectra of $Fe^{2+}$ in cubic ZnS: role of the Jahn-teller coupling R.E.Halsted;M.Aven
  20. 전기전자재료학회논문지 v.15 no.3 GaAs(311)A 기판위에 성장된 탄소도핑된 GaAs 에피층의 광여기 발광 조신호
  21. 전기전자재료학회논문지 v.14 no.4 InAs/GaAs self-organized quantum dots의 전기 광학적 특성연구 배상혁;윤일구;서대식;명재민;이상열
  22. 전기전자재료학회논문지 v.13 no.10 ZnS 형광체 분말의 결정 결함에 따른 발광특성 박용규;성현호;조황신;양해석;이종찬;박대희