• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.83-86
• /
• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.

• Transactions of the Society of Information Storage Systems
• /
• v.9 no.2
• /
• pp.36-41
• /
• 2013

Frictional behavior of a single carbon nanotube(CNT) was investigated using molecular dynamics simulation. A single CNT aligned horizontally on silver or graphene substrate was modeled to evaluate its frictional behavior such as frictional force and rolling/sliding motion with respect to potential parameter and lattice structure of the substrate. As a result, it was found that friction and rolling was affected by adhesion between two surfaces and period of the rolling depended on lattice distance of the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.237-242
• /
• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.101-102
• /
• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.100-101
• /
• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.120-123
• /
• 2003

To investigate the characteristics of the single dendrimer molecule, we attempt to measure morphology and electrical properties of the self-assembled dendrimer on Au (111)substrate with SPM(scanning probe microscopy). The same self-assembly procedure was used for two different concentrations, $10{\mu}mol/ml$ and $100{\mu}mol/ml$. The case of lower concentration, we can measure the diameter and the height of the single molecule with the tapping mode AFM image. The imaged single molecules were dome shaped and the average diameter and height were 15.6 nm, 1.2 nm respectively. From these sizes, we can calculate the volume of the single molecule. The volume of the single molecule was estimated about $116nm^3$. However, that of higher concentration, it is difficult to obtain obvious image of the single molecule. To add to, I-V characteristics were investigated using STM, on which the phenomenon of negative differential resistance (NDR)was observed between 0.14 V and 0.24 V reproductively.

• Applied Biological Chemistry
• /
• v.30 no.3
• /
• pp.258-263
• /
• 1987

The waste gained from alcohol production with sweet potato was considered as a potential substrate for the production of single cell protein (SCP). The high content in organic materials, simplicity to filtrate and a suitable pH for the growth of yeasts were indicated as a good substrate. A yeast utilizing this substrate was isolated from the compost ground and identified as Candida boidinii. The strain was the highest in assimilation of this alcoholic waste and the yield was maximized at pH 5.0, $30^{\circ}C$ after 72 hrs incubation. The dry cell weight and crude protein content at optimal conditions were 1.02g/100ml and 54.5%, respectively. The growth of the yeast was stimulated with the addition of 0.2% urea, 0.1% $K_2HPO_4$, and 0.02% $MgSO_4{\cdot}7H_2O$.

• Environmental Engineering Research
• /
• v.18 no.3
• /
• pp.145-150
• /
• 2013

Optimal preparation guidelines of a cathode catalyst layer by non-precious metal catalysts were evaluated based on electrochemical performance in single-chamber microbial fuel cells (MFCs). Experiments for catalyst loading rate revealed that iron(II) phthalocyanine (FePc) can be a promising alternative, comparable to platinum (Pt) and cobalt tetramethoxyphenylporphyrin (CoTMPP), including effects of substrate concentration. Results showed that using an optimal FePc loading of $1mg/cm^2$ was equivalent to a Pt loading of $0.35mg/cm^2$ on the basis of maximum power density. Given higher loading rates or substrate concentrations, FePc proved to be a better alternative for Pt than CoTMPP. Under the optimal loading rate, it was further revealed that 40 wt% of FePc to carbon support allowed for the best power generation. These results suggest that proper control of the non-precious metal catalyst layer and substrate concentration are highly interrelated, and reveal how those combinations promote the economic power generation of single-chamber MFCs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.424.1-424.1
• /
• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• Proceedings of the Korea Society of Information Technology Applications Conference
• /
• 2002.11a
• /
• pp.363-370
• /
• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.