• Journal of the Korea Society for Simulation
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• v.10 no.3
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• pp.59-70
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• 2001

Typical low-level image processing tasks require thousands of operations per pixel for each input image. Traditional general-purpose computers are not capable of performing such tasks in real time. Yet important features of traditional computers are not exploited by low-level image processing tasks. Since storage requirements are limited to a small number of low-precision integer values per pixel, large hierarchical memory systems are not necessary. The mismatch between the demands of low-level image processing tasks and the characteristics of conventional computers motivates investigation of alternative architectures. The structure of the tasks suggests employing an array of processing elements, one per pixel, sharing instructions issued by a single controller. In this paper we implemented various image processing filtering using the format converter. Also, we realized from conventional gray image process to color image process. This design method is based on realized the large processor-per-pixel array by integrated circuit technology This format converter design has control path implementation efficiently, and can be utilize the high technology without complicated controller hardware.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.697-698
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Korean Journal of Geomatics
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• v.4 no.1
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• pp.1-8
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• 2004

In the middle-resolution remote sensing, the Ground Sampled Distance (GSD) that the detector senses and samples is generally larger than the actual size of the objects (or materials) of interest, and so several objects are embedded in a single pixel. In this case, as it is impossible to detect these objects by the conventional spatial-based image processing techniques, it has to be carried out at sub-pixel level through spectral properties. In this paper, we explain the sub-pixel analysis algorithm, also known as the Linear Spectral Mixing (LSM) model, which has been experimented using the Hyperion data. To find Endmembers used as the prior knowledge for LSM model, we applied the concept of the convex geometry on the two-dimensional scatter plot. The Atmospheric Correction and Minimum Noise Fraction techniques are presented for the pre-processing of Hyperion data. As LSM model is the simplest approach in sub-pixel analysis, the results of our experiment is not good. But we intend to say that the sub-pixel analysis shows much more information in comparison with the image classification.

• Journal of Korea Multimedia Society
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• v.21 no.2
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• pp.138-146
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• 2018

In this paper, we describe an algorithm for extracting depth information from a single image based on CNN. When acquiring three-dimensional information from a single two-dimensional image using a deep-learning technique, it is difficult to accurately predict the edge portion of the depth image because it is a part where the depth changes abruptly. in this paper, we introduce the concept of pixel-wise confidence to take advantage of these characteristics. We propose an algorithm that estimates depth information from a highly reliable flat part and propagates it to the edge part to improve the accuracy of depth estimation.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.38-45
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• 2007

A new 8-bit single-slope ADC using analog RAMP generator with digitally controllable dynamic range has been proposed and simulated for column level or per-pixel CMOS image sensor application. The conversion gain of ADC can he controlled easily by using frequency divider with digitally controllable diviber ratio, coarse/fine RAMP with class-AB op-amp, resistor strings, decoder, comparator, and etc. The chip area and power consumption can be decreased by simplified analog circuits and passive components. Proposed frequency divider has been implemented and verified with 0.65um, 2-poly, 2-metal standard CMOS process. And the functional verification has been simulated and accomplished in a 0.35$\mu$m standard CMOS process.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.563-564
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• 2006

A single photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed using $0.25{\mu}m$triple well CMOS process.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1235-1238
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• 2004

Thresholding has been used to reduce the number of gray values in images. Typically, a single threshold value has been used, resulting in two gray level images. Image reduction of one single threshold value, however, may lose too much of the high-frequency edge information. Thus, dynamic thresholding that uses a different threshold for each pixel is preferred instead of using a single threshold value. Dynamic thresholding can preserve high frequency details as well as reduce the size of images. Since it takes long time to perform existing software dynamic thresholding in an embedded system, this paper proposes and implements a circuit by using a FPGA in order to perform a real-time dynamic thresholding,. The proposed circuit consists of two counters, and threshold look-up table, and control unit. The values of two counters determine each pixel position, the threshold look-up table converts each pixel value into other value, and the control unit generates necessary control signals. On arriving from a camera to the proposed circuit, each pixel is compared with its threshold value and is converted into other gray value. An image processing system by using the proposed circuit will be implemented and some experiments will be performed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.322-329
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.173-173
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• 2010

We proposed viewing angle switchable liquid crystal display(LCD) associated with fringe-field switching (FFS) mode with high aperture ratio characteristic. In the device, single pixel is separated into two regions, named as main pixel for displaying images and sub pixel for viewing angle control. In sub pixel region, add the common electrode on the top substrate and the initial alignment of liquid crystal is Hybrid Alignment Nematic (HAN) state. In conclusion, we suggested that the device has high aperture ratio characteristic because the LC directors are rotated in which viewing angle control region are generated fringe electric field.