• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1301-1302
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• 2007

The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.918-921
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• 2005

According to the mechanical-electrical coupling characteristics and the electrical Impedance property of resistor-inductor-capacitor(RLC) series resonant circuit, the mechanical impedance analysis of a bimorph piezoceramic patch shunted with a series RLC resonant circuit is conducted. The displacement transfer function of a cantilever beam bonded with a piezoelectric shunt damping module is deduced in the case of single mode vibration of the beam. By the use of vibration damping theory of tuned mass damper system, the parameter optimization of piezoelectric shunt damping system is performed. The optimal resonant state of the shunting circuit can be obtained when the resister and conductor are optimally adjusted. Test results show that the vibration control effect as well improved with optimized piezoelectric shunt system.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.2
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• pp.115-124
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• 2017

This paper aims to develop an SMPS topology for handling a high range of input voltages based on a DC-DC flyback converter circuit. For this purpose, 2 capacitors of the same specifications were serially connected on the input terminal side, with a flyback converter of the same circuit configuration serially connected to each of them, so as to achieve high input voltage and an effect of dividing input voltage. The serially connected flyback converters have the transformer turn ratio of 1:1, so that each coil is used for the winding of a single transformer, which is a characteristic of doubly-fed configuration and enables the correction of input capacitor voltage imbalance. In addition, a pulse transformer was designed and fabricated in a way that can achieve the isolation and noise robustness of the PWM output signal of the PWM controller that applies gate voltage to individual flyback converter switches. PSIM simulation was carried out to verify such a structure and confirm its feasibility, and a 100W class stack was fabricated and used to verify the feasibility of the proposed high voltage SMPS topology.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.342-348
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• 2021

The PV module of solar power systems requires maximum power point tracking (MPPT) technique because the power-voltage and current-voltage characteristics vary depending on the surrounding environment. In addition, the 120 Hz ripple voltage on the DC-Link is caused by the imbalance of the system voltage and current. The effect of this 120 Hz ripple voltage reduces the efficiency of the power generation system by increasing the output current distortion rate. Increasing the capacity of DC-Link can reduce the 120 Hz ripple voltage, but this method is inefficient in price and size. We propose a technique that detects 120 Hz ripple voltage and reduces the effect of ripple voltage without increasing the DC-Link capacity through a controller. The proposed technique was verified through simulations and experiments using a 1 kW single-phase solar power system. In addition, the proposed technique's feasibility was demonstrated by reducing the distortion rate of the output current.

• Applied Chemistry for Engineering
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• v.30 no.3
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• pp.324-330
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• 2019

Petal-like nickel cobaltite ($NiCo_2O_4$)/reduced graphene oxide (rGO) composites with different $rGO-to-NiCo_2O_4$ weight ratios were synthesized using a simple hydrothermal method and subsequent thermal treatment. In the $NiCo_2O_4/rGO$ composite, the $NiCo_2O_4$ 3-dimensional nanomaterials contributed to the improvement of electrochemical properties of the final composite material by preventing the restacking of the rGO sheet and securing ion movement passages. The composite structure was examined by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Fourier-transform infrared (FT-IR) spectroscopy. The FE-SEM and TEM images showed that petal-like $NiCo_2O_4$ was supported on the rGO surface. Cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS) were used for the electrochemical analysis of composites. Among the prepared composites, $0.075g\;rGO/NiCo_2O_4$ composite showed the highest specific capacitance of $1,755Fg^{-1}$ at a current density of $2Ag^{-1}$. The cycle performance and rate capability of the composite material were higher than those of using the single $NiCo_2O_4$ material. These nano-structured composites could be regarded as valuable electrode materials for supercapacitors that require superior performance.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.3
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• pp.184-196
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.522-526
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• 2007

Structural features and electrochemical performances of cokes pyrolized from oxidized cokes were examined, and compared with KOH-activated coke. Needle cokes ($d_{002}=3.5{\AA} $), having a graphene layer structure, were changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an $NaCLO_3$/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized coke was expanded to $6.9{\AA} $ with increasing oxygen content. After heating at $200^{\circ}C$, the oxidized coke was pyrolized to the graphene layer structure with inter-layer distance of $3.6{\AA} $. However, the change of the inter-layer distance of the needle coke was not observed in the KOH activation process. On the other hand, an intercalation of electrolyte ions into the pyrolized coke, observed at first charge, occurred at 1.0 V, in which the value was lower than that of KOH-activation coke. The cell capacitor using pyrolized coke exhibited a lower internal resistance of $0.57{\Omega}$ in 1 kHz, and a larger capacitance per weight and volume of 30.3 F/g and 26.9 F/ml at the two-electrode system in the potential range 0~2.5 V than those of the cell capacitor using KOH-activation of coke. This better electrochemical performance may be associated with structure defects in the graphene layer derived from the process of the inter-layer expansion and shrinkage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1126-1135
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• 2007

This paper presents the varactor-tuned miniaturized hairpin tunable filter with a single control voltage. The previously proposed miniaturization method is a very straight-forward method to miniaturize a parallel coupled-line filter. In this paper, the miniaturized hairpin tunable filter is proposed with the constant ratio rule of that the capacitances of the each stage always have constant ratio without any dependency to miniaturized electrical length. To show the validity of the proposed method, a 3rd order 0.5 dB ripple Chebyshev fitter with a center frequency of 900 MHz and a fractional bandwidth(FBW) of 10 % was designed and fabricated. The fabricated filter was based on CER-10 substrate of Taconic Inc. with 1SV277 varactor diode of Toshiba Inc. The center frequency of the fabricated filter can be changed from 606 MHz to 944 MHz, 338 MHz with the control voltage from 0.5 V to 4 V. The insertion loss of the proposed filter is increased with the increment of the control voltage, and the filter characteristics are well reserved expect of slight change of the bandwidth with the various control voltage.