Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.241-241
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- 2010
An Reliable Non-Volatile Memory using Alloy Nano-Dots Layer with Extremely High Density
- Lee, Gae-Hun (Department of Electronics and Computer Engineering, Hanyang University) ;
- Kil, Gyu-Hyun (Department of Electronics and Computer Engineering, Hanyang University) ;
- An, Ho-Joong (Department of Electronics and Computer Engineering, Hanyang University) ;
- Song, Yun-Heup (Department of Electronics and Computer Engineering, Hanyang University)
- Published : 2010.02.17
Abstract
New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of
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