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Characteristics of Meroeyanine Dye LB Films Using Electron Spin Resonance Spectroscopy (전자 스핀 공명을 이용한 메로시아닌 색소 LB막의 특성)

  • Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1569-1571
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    • 1996
  • The role of ESR spectroscopy in the characterization of functional LB films is discussed. Optical absorption were performed on LB films of binary mixtures of three kinds of merocyanine dyes where DS and 6Me-DS form J-like aggregates but not DO in single component films. The observed optical absorption spectra of mixed films were markedly dependant on the combination of dyes. We found the formation of J-aggregates in a mixed merocyanine dyes containing a non J-aggregate forming dye DO, in a single component case. In structural studios, ESR is of particular important in the analysis of molecular orientation of LB films. Development of new functional LB films may provide more cases where ESR spectroscopy will clarify the nature of such films.

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Model Following Control of Linear Time-Invariant System with Uncertain Time Delay (불확실성 지연시간 시스템의 모델추종제어)

  • Kim, Hye-Kyung;Kim, Young Chol
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.6
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    • pp.786-796
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    • 2014
  • This paper presents a new approach to design a robust tracking controller for linear time-invariant systems with uncertain time-delay. By introducing the model following control (MFC) structure which consists of two loops in nature, we show that the controller is capable of having a predictive control action and effectively tracking the reference output with a desired transient response as well. Three design techniques to achieve good tracking performance are suggested. It is also analytically shown that the tracking performance of the proposed scheme is more robust than that of typical single-loop feedback structure. An illustrative example is given to compare the tracking performances of the proposed methods with a single loop method.

Inversion-Based Robust Output Tracking of Differentially Flat Nonlinear Systems

  • Joo, Jin-Man;Park, in-Bae;Park, Yoon-Ho
    • Transactions on Control, Automation and Systems Engineering
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    • v.3 no.1
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    • pp.21-26
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    • 2001
  • In this study, we propose a two degree of freedom robust output tracking control method for a class of nonlinear system. We consider hyperbolically nonminimum phase single-input single-output uncertain nonlinear systems. We also consider the case that the nominal input-state equation is differentially flat. Nominal stable state trajectory is obtained in the flat output space via the flat output. Nominal feedforward control input is also computed from the nominal state trajectory. Due to the nature of the method, the generated flat output trajectory and control input are noncausal. Robust feedback control is designed to stabilize the systems around the nominal trajectory. A numerical example is given is given to demonstrate that robust tracking is achieved.

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Implementation of a Sliding Mode Controller for Single Ended Primary Inductor Converter

  • Subramanian, Venkatanarayanan;Manimaran, Saravanan
    • Journal of Power Electronics
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    • v.15 no.1
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    • pp.39-53
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    • 2015
  • This paper presents the regulation of the output voltage and inductor currents in a Single Ended Primary Inductor Converter (SEPIC), operating in the continuous conduction mode (CCM) using a sliding mode controller. Owing to the time varying nature of the SEPIC converter, designing a feedback controller is a challenging task. In order to improve the dynamic performance of the SEPIC, a Sliding Mode Controller (SMC) is developed. The developed SMC is designed by using a state space average model. The performance of the developed controller with the SEPIC converter is validated at different working conditions through Matlab simulations. It is also compared with the performance while using a PI controller. The results show that the designed controller gives very good output voltage regulation under different operating conditions such as a varying input voltage, changes in the load and component variations. A 48V, 46W experimental setup for has been developed in an analog platform to validate the performance of the proposed SMC.

Single and Dual Ligand Effects on Gene Expression Changes in Mouse Macrophage Cells

  • Choi Sang-Dun;Seo Jeong-Sun
    • Genomics & Informatics
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    • v.4 no.2
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    • pp.57-64
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    • 2006
  • We identified differentially expressed genes in RAW264.7 cells in response to single and double ligand treatments (LPS, $IFN{\gamma}$, 2MA, LPS plus $IFN{\gamma}$, and LPS plus 2MA). The majority of the regulated transcripts responded additively to dual ligand treatment. However, a significant fraction responded in a non-additive fashion. Several cytokines showing non-additive transcriptional responses to dual ligand treatment also showed non-additive protein production/secretion responses in separately performed experiments. Many of the genes with non-additive responses to LPS plus 2MA showed enhanced responses and encoded pro-inflammatory proteins. LPS plus $IFN{\gamma}$ appeared to induce both non-additive enhancement and non-additive attenuation of gene expression. The affected genes were associated with a variety of biological functions. These experiments reveal both dependent and independent regulatory pathways and point out the specific nature of the regulatory interactions.

A study on prediction of whipping effect of very large container ship considering multiple sea states

  • Kim, Beomil;Choung, Joonmo
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.12 no.1
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    • pp.387-398
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    • 2020
  • In the design stage of the very large container ships, some methodologies for the whipping effects have been developed, but most of them are based on single sea state. We developed a methodology that considers multiple sea states. Fluid-structure Interaction (FSI) analyses with one dimensional structural model were carried out to capture slamming-induced transient whipping behaviors. Because of the nature of random phases of the applied wave spectra, the required period for entire FSI analyses was determined from the convergence study where the whipping effect became stable. Low pass filtering was applied to the transient whipping responses to obtain the hull girder bending moment processes. Peak counting method for the filtered whipping responses was used to obtain collection of the vertical bending moment peaks. The whipping effect from this new method is compared with that from based on single sea state approach. The efficiency and advantage of the new methodology are presented.

Symbiotic organisms search algorithm based solution to optimize both real power loss and voltage stability limit of an electrical energy system

  • Pagidi, Balachennaiah;Munagala, Suryakalavathi;Palukuru, Nagendra
    • Advances in Energy Research
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    • v.4 no.4
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    • pp.255-274
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    • 2016
  • This paper presents a novel symbiotic organisms search (SOS) algorithm to optimize both real power loss (RPL) and voltage stability limit (VSL) of a transmission network by controlling the variables such as unified power flow controller (UPFC) location, UPFC series injected voltage magnitude and phase angle and transformer taps simultaneously. Mathematically, this issue can be formulated as nonlinear equality and inequality constrained multi objective, multi variable optimization problem with a fitness function integrating both RPL and VSL. The symbiotic organisms search (SOS) algorithm is a nature inspired optimization method based on the biological interactions between the organisms in ecosystem. The advantage of SOS algorithm is that it requires a few control parameters compared to other meta-heuristic algorithms. The proposed SOS algorithm is applied for solving optimum control variables for both single objective and multi-objective optimization problems and tested on New England 39 bus test system. In the single objective optimization problem only RPL minimization is considered. The simulation results of the proposed algorithm have been compared with the results of the algorithms like interior point successive linear programming (IPSLP) and bacteria foraging algorithm (BFA) reported in the literature. The comparison results confirm the efficacy and superiority of the proposed method in optimizing both single and multi objective problems.

Photoaddition Reactions of N-Methylthiophthalimide with $\alpha$-Silyl-n-electron Donors via Single Electron Transfer-Desilylation and Hydrogen Atom Abstraction Pathways

  • Yoon, Ung-Chan;Oh, Sun-Wha;Moon, Seong-Chul;Hyung, Tae-Gyung
    • Journal of Photoscience
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    • v.9 no.1
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    • pp.17-22
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    • 2002
  • Studies have been conducted to explore photoaddition reactions of N-methylthiophthalimide with $\alpha$-silyl-n-electron donors Et$_2$NCH$_2$SiMe$_3$, n-PrSCH$_2$SiMe$_3$ and EtOCH$_2$SiMe$_3$. Photoaddition of $\alpha$-silyl amine Et$_2$NCH$_2$SiMe$_3$ to N-methylthiophthalimide occurs in $CH_3$CN and benzene to produce non-silicon containing adduct in which thiophthalimide thione carbon is bonded to $\alpha$-carbon of $\alpha$-silyl amine in place of the trimethylsilyl group. In contrast, photoaddition of EtOCH$_2$SiMe$_3$ to N-methylthiophthalimide generates two diastereomeric adducts in which thiophthalimide thione carbon is connected to $\alpha$-carbon of $\alpha$-silyl ether in place of u-hydrogen. Based on a consideration of the oxidation potentials of u-silyl-n-electron donors and the nature of photoadducts, mechanism for these photoadditions involving single electron transfer(SET) -desilylation and H atom abstraction pathways are proposed.

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Oxygen Deficiency, Hydrogen Doping, and Stress Effects on Metal-Insulator Transition in Single-Crystalline Vanadium Dioxide Nanobeams

  • Hong, Ung-Gi;Jang, Seong-Jin;Park, Jong-Bae;Bae, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.424.1-424.1
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    • 2014
  • Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

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Single source CVD of epitaxial 3C-SiC on Si(111) without carbonization

  • Lee, Kyung-Won;Yu, Kyu-Sang;Bae, Jung-Wook;Kim, Yun-Soo
    • Journal of Korean Vacuum Science & Technology
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    • v.1 no.1
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    • pp.38-44
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    • 1997
  • Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.