• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.11-18
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• 1996

Grown-in defects like OISF and FPD in the large diameter(> 8 inch)of silicon crystal are characterized. It was revealed that the presence of the ring-patterned OISF would deterorate the minority life time of the silicon crystal. Through the cooling experiment from the $1250^{\circ}C$, the nucleation of the OISF was confirmed to follow the homogeneous nucleation and growth process. In addition to OISF nucleus, crystal originated particle, which was known to be closely related with FPD (Flow Pattern Defects), was found to depend on the pulling rate of the crystal. Combination of the lower rate of the pulling and the faster cooling near the $950^{\circ}C$ is proposed to be effective method in reducing the generation of these grown-in defects.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.06a
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• pp.160-173
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• 1997

Microstructure of hypereutectic Al-17wt.% Si alloy, fabricated by mechanical stirring and by reheating at semi-solid state, was investigated by optical microscope. Flow behavior semi-solid metal also was investigated at diffentent mould temperatures 280$^{\circ}C$, 290$^{\circ}C$ and 300$^{\circ}C$. Size of silicon particles were increased over 100$\mu\textrm{m}$ during solidification as a result of stirring. It is considered as microstructural coarsening by bonding between neighbouring primary silion particles during stirring of slurry. In case of reheating at semi-solid state, however, primary silicon particle was not increased at size of 40$\mu\textrm{m}$ and nearly spherical aluminum solde particle also could be obtained uniformly in distribution. The fludity of Al-17wt.% Si alloys at semi-solid state was improved when solid fraction was 0.7 at mould temperature of 300$^{\circ}C$ than other conditions.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.12
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• pp.2279-2286
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• 1992

A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of autombile because of high-resistance and good strength. In this study, the cutting of a hypereutectic Al-Si alloy (A390) for extraction of Si particle was experimentally investigated. By proper selection of cutting tool materials and optimization of cutting conditions, economical machining of this alloy is achieved. The surface roughness relates closely with the feed rate and cutting speed.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2002.04a
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• pp.237-238
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• 2002

Particle - bound water changes the physical and chemical properties of aerosol particles, such as size and light scattering properties. Consequently, it is necessary to remove water vapor from ambient aerosols before aerosol particles are sized and counted. Silicon gel diffusion dryer is commonly employed for this purpose. However, it can not be operated continuously While in operation, silicon gel becomes progressively more loaded with water and must periodically be regenerated by drying off the water. (omitted)

• Journal of Korea Foundry Society
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• v.14 no.6
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• pp.530-540
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• 1994

Aluminium-silicon alloy(JIS AC8A) matrix composites reinforced with SiC particles were fabricated by spray-cast forming process, and the microstructure of powders and preforms produced were studied by using an optical and scanning electron microscopy. SiC particles were co-sprayed by mixed phase injection method during the spray casting process. Most of the composite powders formed by this mixed phase injection method exhibit morphology of particle-embedded type, and some exhibits the morphology of particle attached type due to additional attachment of the SiC particles on the surface of the powders in flight. The preforms deposited were resulted in dispersed type microstructure. The pre-solidified droplets and the deposited preform of SiC-reinforced aluminium alloy exhibit finer equiaxed grain size than that of unreinforced aluminium alloy. Eutectic silicons of granular type are crystallized at the corner of the aluminum grains in the preforms deposited, and some SiC particles seem to act as nucleation sites for primary/eutectic silicon during solidification. Such primary/eutectic silicons seem to retard grain growth during the continued spray casting process. It is envisaged from the microstructural observations for the deposited preform that the resultant distribution of SiC injected particles in the Al-Si microsturcture is affected by the amount of liquid phase in the top part of the preform and by the solidification rate of the preform deposited.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.25-25
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• 1997

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.