• Advances in nano research
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• v.7 no.2
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• pp.99-108
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• 2019

Higher-order theories are very important to investigate the mechanical properties and behaviors of nanoscale structures. In this study, a free vibration behavior of SiNW resting on elastic foundation is investigated via Eringen's nonlocal elasticity theory. Silicon Nanowire (SiNW) is modeled as simply supported both ends and clamped-free Euler-Bernoulli beam. Pasternak two-parameter elastic foundation model is used as foundation. Finite element formulation is obtained nonlocal Euler-Bernoulli beam theory. First, shape function of the Euler-Bernoulli beam is gained and then Galerkin weighted residual method is applied to the governing equations to obtain the stiffness and mass matrices including the foundation parameters and small scale parameter. Frequency values of SiNW is examined according to foundation and small scale parameters and the results are given by tables and graphs. The effects of small scale parameter, boundary conditions, foundation parameters on frequencies are investigated.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Journal of Convergence for Information Technology
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• v.7 no.5
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• pp.123-128
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• 2017

Nanostructured materials have received attention due to their unique electronic, optical, optoelectrical, and magnetic properties as a results of their large surface-to-volume ratio and quantum confinement effects. Thermal chemical vapor deposition process has attracted much attention due to the synthesis capability of various structured nanomaterials during the growth of nanostructures. In this study, silicon oxide nanowires were grown on Si\$SiO_2$(300 nm)\Pt(5~40 nm) substrates by two-zone thermal chemical vapor deposition with the source material $TiO_2$ powder via vapor-liquid-solid process. The morphology and crystallographic properties of the grown silicon oxide nanowires were characterized by field-emission scanning electron microscope and transmission electron microscope. As results of analysis, the morphology, diameter and length, of the grown silicon oxide nanowires are depend on the thickness of the catalyst films. The grown silicon oxide nanowires exhibit amorphous phase.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.1-8
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• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.160.2-160.2
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• 2014

Recently silicon has attracted intense interest as a promising anode material of lithium-ion batteries due to its extremely high capacity of 4200 mA/g (for Li4.2Si) that is much higher than 372 mAh/g (for LiC6) of graphite. However, it seriously suffers from large volume change (even up to 300%) of the electrode upon lithiation, leading to its pulverization or mechanical failure during lithiation/delithiation processes and the rapid capacity fading. To overcome this problem, Si nanowires have been considered. Use of such Si nanowires provides their facile relaxation during lithiation/delithiation without mechanical breaking. To design better Si electrodes, a study to unveil atomic-scale mechanisms involving the volume expansion and the phase transformation upon lithiation is critical. In order to investigate the lithiation mechanism in Si nanowires, we have developed a reactive force field (ReaxFF) for Si-Li systems based on density functional theory calculations. The ReaxFF method provides a highly transferable simulation method for atomistic scale simulation on chemical reactions at the nanosecond and nanometer scale. Molecular dynamics (MD) simulations with the ReaxFF reproduces well experimental anisotropic volume expansion of Si nanowires during lithiation and diffusion behaviors of lithium atoms, indicating that it would be definitely helpful to investigate lithiation mechanism of Si electrodes and then design new Si electrodes.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.69-72
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• 2013

Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1708-1709
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• 2011

본 논문에서는 Ambipolar 실리콘 나노와이어 FET (SiNW FET)의 빛을 통한 모듈래이션을 분석하였다. Ambipolar SiNW FET를 얻기 위해서는 나노와이어가 저농도로 도핑된 실리콘이어야 한다. 실리콘의 비등방성 습식식각 이후, 산화 공정을 통한 나노와이어 제작을 통해 보론의 확산을 통해 저농도로 도핑된 실리콘 나노와이어를 제작하였다. 빛이 조사될 시에 생기는 Ambipolar SiNW FET의 모듈래이션 특성에 관해 분석하고 간단한 응용 실험을 통하여 검증하였다. 응용 실험 결과 pH 센싱의 감도는 빛을 10000 lux 조사할 경우 8.84 배 증가하였다.