• Elastomers and Composites
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• v.42 no.2
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• pp.112-118
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• 2007

An HRP immobilized carbon paste electrode, which was bound by EPDM, was newly fabricated and its electrochemical properties were investigated for the purpose of validating the new possibility for the practical use of biosensor. In the experimental range of substrate concentration, Lineweaver-Burk plot of the signal showed a good linearity. This means that HRP was embedded effectively to preserve its identity in the bulk of composite electrode materials and EPDM is a recommendatory binder. When the electrode was run at low operating potential($0.0\sim-1.0$ V vs. Ag/AgCl), it showed a high sensitivity and a good reproducibility. Especially the mechanical stability of the dried rubber was a remarkable breakthrough to get over a difficulty in putting the carbon-paste electrode bound with silicon oil to real use.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.327-327
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• 2007

This paper reports the simulation results of piezoelectric microspeakers due to structural changes(diaphragm materials, corrugation width and electrode shapes). When we compared the dependence of diaphragm material properties, the microspeaker with LTO(Low Temperature Oxide) diaphragm shows higher deflection than that of silicon nitride diaphragm, even though the resonant frequencies are almost same in both cases. In case of circular-electrode microspeaker, the deflection of diaphragm is about $16\;{\mu}m$ at 20 V, and it decreases as the corrugation width is decreased. However, the deflection of diaphragm with the square-electrode reveals almost twice times higher value at the same applied voltage than the circular one, and it increases as the corrugation depths are decreased from $30\;{\mu}m\;to\;10\;{\mu}m$. The first resonant frequency of microspeakers present about 1.8 kHz in circular-electrode and 1.2 kHz in square-electrode, respectively.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.342-347
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• 2011

We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of $1.3\;{\times}\;10^{11}\;cm^{-2}$ were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as $8.3\;V/{\mu}m$ and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices.

• Journal of Adhesion and Interface
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• v.24 no.1
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• pp.9-16
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• 2023

Silicon has been studied as an anode material for next-generation lithium ion batteries due to its high theoretical electrochemical capacity. However, the extreme volume change during the lithiation/delithiation and the inherently low electronic conductivity of silicon hamper the practical application of silicon anodes. Conductive polymer binders are effective means to solve these problems, and it has been reported that the performance of the silicon anode can be greatly improved through the proper molecular design of the conductive polymer binders. In this paper, representative recent studies on conductive polymer binders for silicon anodes will be introduced, and through this, binder design strategies to overcome the limitations of silicon anodes will be explored.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2271-2278
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• 2007

Electron transfer of a redox protein at a bare gold electrode is too slow to observe the redox peaks. A novel Nafion-riboflavin functional membrane was constructed during this study and electron transfer of cytochrome c, superoxide dismutase, and hemoglobin were carried out on the functional membrane-modified gold electrode with good stability and repeatability. The immobilized protein-modified electrodes showed quasireversible electrochemical redox behaviors with formal potentials of 0.150, 0.175, and 0.202 V versus Ag/AgCl for the cytochrome c, superoxide dismutase and hemoglobin, respectively. Whole experiment was carried out in the 50 mM MOPS buffer solution with pH 6.0 at 25 oC. For the immobilized protein, the cathodic transfer coefficients were 0.67, 0.68 and 0.67 and electron transfer-rate constants were evaluated to be 2.25, 2.23 and 2.5 s?1, respectively. Hydrogen peroxide concentration was measured by the peroxidase activity of hemoglobin and our experiment revealed that the enzyme was fully functional while immobilized on the Nafion-riboflavin membrane.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.