• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• Journal of Power Electronics
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• v.13 no.4
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.192-195
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• 2001

In this report, we firstly have investigated the electrical characteristics of silicon carbide (SiC) schottky barrier diode and compared the characteristics to those of conventional Si diode through simulation and experiment. Secondly we have investigated the influence of two kinds of diodes to the power conversion circuit of the systems. From the investigation results it is verified that SiC schottky barrier diode is more superior to Si diode in thermal and reverse recovery, characteristics, which are the important factors in the size reduction and higher reliability of the systems. Finally though the experiment applied to PFC(Power Factor Correction) circuits, we precisely verified excellency to thermal characteristic of SiC schottky barrier diode any other diode.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.409-412
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• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.