• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.247-255
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• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• Carbon letters
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• v.15 no.3
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• pp.180-186
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• 2014

This study highlights a novel method and mechanism for the rapid and effective milling of carbon fibers (CFs) in silicon carbide (SiC) powder, and also the dispersion of CFs in SiC powder. The composite powders were prepared by chopping and exfoliation of CFs, and ball milling of CFs and SiC powder in isopropyl alcohol. A wide range of CFs loading, from 10 to 50 vol%, was studied. The milling of CFs and SiC powder was checked by measuring the average particle size of the composite powders. The dispersivity of CFs in SiC powder was checked through scanning electron microscope. The results show that the usage of exfoliated CF tows resulted in a rapid and effective milling of CFs and SiC powder. The results further show an excellent dispersion of CFs in SiC powder for all CFs loading without any dispersing agent.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.53.1-53.1
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• 2009

실리콘 다층박막 태양전지를 위한 초고효율 실리콘 양자점 박막을 연구하기 위해 Silicon target과 Carbon target을 동시에 스퍼터하여 Silicon Carbide 박막을 증착하였다. Silicon Carbide 박막의 조성비는 target에 인가되는 RF Power를 조절하여 Auger Electro Spectroscopy를 사용하여 Si, C, O, N원소의 양을 정량화하여 측정하였다. Si Power를 200W에 고정하고, C Power를 0W에서 400W까지 변화시킬 때, $Si_{1-x}$ $C_x$ 박막에서 조성비 x는 0 ~ 0.43 범위였다. 이 박막을 증착 한 후에 질소 분위기에서 600 ~ $1000^{\circ}C$ 온도로 열처리를 진행하였다. High resolution TEM과 Raman 분석을 통해, 박막의 열처리 후 $Si_{1-x}$ $C_x$ 박막 내에 실리콘 양자점이 형성되었음을 관찰할 수 있었고, 2 ~ 10 nm 의 크기를 가지는 것으로 확인할 수 있었다. 이 실리콘 양자점을 포함한 $Si_{1-x}$ $C_x$ 박막을 적층하여 UV-VIS-NIR spectroscopy, FTIR및 PL와 같은 측정을 통해 광학적 에너지 밴드갭의 변화와 그에 따른 특성을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• Korean Chemical Engineering Research
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• v.61 no.1
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• pp.32-38
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• 2023

In this study, the electrochemical properties of dopamine coated silicon/silicon carbide/carbon(Si/SiC/C) composite materials were investigated to improve cycle stability and rate performance of silicon-based anode active material for lithium-ion batteries. After synthesizing CTAB/SiO₂ using the Stöber method, the Si/SiC composites were prepared through the magnesium thermal reduction method with NaCl as heat absorbent. Then, carbon coated Si/SiC anode materials were synthesized through polymerization of dopamine. The physical properties of the prepared Si/SiC/C anode materials were analyzed by SEM, TEM, XRD and BET. Also the electrochemical performance were investigated by cycle stability, rate performance, cyclic voltammetry and EIS test of lithium-ion batteries in 1 M LiPF₆ (EC: DEC = 1:1 vol%) electrolyte. The prepared 1-Si/SiC showed a discharge capacity of 633 mAh/g and 1-Si/SiC/C had a discharge capacity of 877 mAh/g at 0.1 C after 100 cycles. Therefore, it was confirmed that cycle stability was improved through dopamine coating. In addition, the anode materials were obtain a high capacity of 576 mAh/g at 5 C and a capacity recovery of 99.9% at 0.1 C/0.1 C.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.349-353
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• 2016

We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.36-40
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• 2010

The SiO vapor that was generated from a mixture of Si and $SiO_2$ was reacted at $1350^{\circ}C$ for 2 h under vacuum with carbon nanofibers to produce SiC nanofibers having an average diameter of 100~200 nm. In order to understand the gas corrosion behavior, SiC nanofibers were exposed to air up to $1000^{\circ}C$. SiC oxidized to amorphous $SiO_2$, but its oxidation resistance was inferior unlike bulk SiC, because of high surface area of nanofibers. When SiC nanofibers were exposed to Ar-1% $SO_2$ atmosphere, SiC oxidized to amorphous $SiO_2$, without forming $SiS_2$, owing to the thermodynamic stability of $SiO_2$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.04a
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• pp.139-145
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• 1998

This paper addresses the R-curve properties, wear resistance, and erosion resistance of the two silicon carbide ceramics with different microstructures, i.e. , fine grained SiC and in situ-toughened SiC(IST SIC). Fine grained SiC exhibits a relatively flat R-curve behavior whereas the IST SiC exhibits a increasing R-curve behavior. The increasing R-curve behavior in IST SiC is attributed to relatively weak grain boundaries. The rate of material removal during wear tests and erosion tests was higher for IST SiC than that for fine grained SiC. This is attributed to the weaker grain boundaries in IST SiC than that in fine grained SiC. It is implied that fracture toughness in short crack regime should be taken into consideration in the interpretation of the microscopical material removal process. We show that the higher the strength of grain boundaries is, the higher wear and erosion resistances are.

• Resources Recycling
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• v.22 no.2
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• pp.22-28
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• 2013

In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.