• 한국세라믹학회지
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• 제35권12호
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• pp.1249-1256
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• 1998

${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

• 한국세라믹학회지
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• 제47권2호
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• pp.157-162
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• 2010

Effect of starting SiC particle size on nitridation rate and flexural strength of $Si_3N_4$-bonded-SiC (SNBSC) ceramics was investigated by using SiC particles of different size (${\sim}200\;{\mu}m$, ${\sim}100\;{\mu}m$ and ${\sim}45\;{\mu}m$). The specimen prepared from smaller SiC particles resulted in higher nitridation rate after nitridation at $1450^{\circ}C$, owing to the lower packing density in green body. The flexural strength showed maxima after 1-h nitridation for all specimens and then decreased with prolonged nitridation because of local densification-induced pore coarsening. The specimen prepared from smaller SiC particles showed better flexural strength because of smaller pore size and partly higher nitridation rate in the specimen. A maximal flexural strength of 29 MPa was obtained in the specimen with a density of $2.04\;g{\cdot}cm^3$, which was prepared from $45\;{\mu}m$-SiC particles.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2001년도 추계학술발표대회 논문집
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• pp.141-143
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• 2001

Ceramic fiber-reinforced composites have good mechanical properties in hardness and durability. In this study, we studied the formation of SiC/C composites from methyltrichlorosilane and hydrogen by the Pulse-chemical vapor infiltration(PCVI) to deposit silicon carbide around the changes of the amount of deposit. SiC/C composites formed at $950^{\circ}C$, 20torr, Pulse-times (5s/60s). SEM of the cross sectional area of semple showed deposited silicon carbide around fibers.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• 한국표면공학회지
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• 제52권6호
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• pp.321-325
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• 2019

Triso-type coating layers of silicon carbide and graphite on UO₂ paticulate nuclear fuel were prepared by using fluidized bed type chemical vapor deposition and self-propagating high temperature synthesis methods to make a coated nuclear fuel of a power plant for hydrogen mass-production. The source and carrier gases were the mixture of methyltrichlorosilane and propane, and inert argon. Chemical analysis and microstructure observation showed that the coated layers were inner graphite, middle silicon carbide and outer graphite. The elastic modulus and nano-hardness of the silicon carbide layer were 503 [GPa] and 36 [GPa], respectively.

• 한국세라믹학회지
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• 제47권6호
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• pp.509-514
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• 2010

Porous mullite-bonded SiC (MBSC) ceramics were fabricated at temperatures ranging from 1400 to $1500^{\circ}C$ for 2 h using silicon carbide (SiC), alumina ($Al_2O_3$), strontium oxide (SrO), and poly (methyl methacrylate-coethylene glycol dimethacrylate) (PMMA) microbeads. The effect of template content on porosity, pore morphology, and flexural strength were investigated. The porosity increased with increasing the template content at the same sintering temperature. The flexural strength showed maximum after sintering at $1450^{\circ}C$/2 h for all specimens due to small pores and dense strut. By controlling the template content and sintering temperature, it was possible to produce porous MBSC ceramics with porosities ranging from 30% to 54%. A maximum flexural strength of ~51MPa was obtained at 30% porosity when no template were used and specimens sintered at $1450^{\circ}C$/2 h.

• 한국세라믹학회지
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• 제46권5호
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• pp.520-524
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• 2009

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, Si, C as starting materials and Al as an optional sintering additive. The effect of Al addition on the porosity and strength of the porous SBSC ceramics were investigated as functions of sintering temperature and Si:C ratio. The porosity increased with decreasing the Si:C ratio and increasing the sintering temperature. It was possible to fabricate SBSC ceramics with porosities ranging from 37% to 44% by adjusting the Si:C ratio and the sintering temperature. Addition of Al additive promoted densification and necking between SiC grains, resulting in improved strength. Typical flexural strengths of SBSC ceramics with and without Al addition were 44 MPa and 34MPa, respectively.

• 대한기계학회논문집B
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• 제26권9호
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• pp.1226-1233
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• 2002

The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.

• 한국세라믹학회지
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• 제43권6호
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• pp.327-332
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• 2006

The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.

• 한국세라믹학회지
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• 제45권9호
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• pp.518-523
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• 2008

The mechanical properties of silicon carbide deposited by chemical vapor deposition process onto a graphite substrate are studied using nanoindentation techniques. The silicon carbide coating was fabricated in a chemical vapor deposition process with different microstructures and thicknesses. A nanoindentation technique is preferred because it provides a reliable means to measure the mechanical properties with continuous load-displacement recording. Thus, a detailed nanoindentation study of silicon carbide coatings on graphite structures was conducted using a specialized specimen preparation technique. The mechanical properties of the modulus, hardness and toughness were characterized. Silicon carbide deposited at $1300^{\circ}C$ has the following values: E=316 GPa, H=29 GPa, and $K_c$=9.8 MPa $m^{1/2}$; additionally, silicon carbide deposited at $1350^{\circ}C$ shows E=283 GPa, H=23 GPa, and $K_c$=6.1 MPa $m^{1/2}$. The mechanical properties of two grades of SiC coating with different microstructures and thicknesses are discussed.