• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.394-400
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• 2018

The current work investigates the effects of nucleation heat treatments, on the microstructure and mechanical properties of a novel silicate glass in $Li_2O-BaO-SiO_2$ system with 1 mol% $P_2O_5$ as nucleating agent. As-cast glass was exposed to nucleation heat treatments at $490-550^{\circ}C$ for 1-3 h. The microstructural examination was performed by SEM/EDS. The highest Vickers microhardness was determined to be 650 Hv for the sample heat treated at $550^{\circ}C$ for 1 h. The increase in the nucleation time also affected Vickers microhardness and the highest one was determined to be 600 Hv after nucleation for 3 h. The fracture toughness, $K_{IC}$ reached $2.51MPa.m^{1/2}$ after nucleation at $550^{\circ}C$ for 1 h. The nucleation temperatures had a more pronounced effect on the fracture toughnesses in comparison to nucleation times. The indentation toughness data was used to determine Weibull parameters from Ln ln [1/(1-P)]-$lnK_{IC}$ plots. Weibull modulus, m of the samples nucleated at 500, 510, 530, $550^{\circ}C$ for 1h. and $540^{\circ}C$ for 2 h. were determined similarly to be 3.8, 3.5, 4.7 and 3.9, respectively. The rest of the samples indicated higher Weibull moduli, which may be attributed to the formations of microcracks due to the mismatch in between newly formed crystals and remaining glassy matrix.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.98.1-98.1
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• 2017

본 연구에서는 정전류 조건에서 알루미늄 합금의 PEO(Plasma Electrolytic Oxidation) 피막 형성 거동에 대한 전해질 조성의 영향을 아크 발생 양상, 전압-시간 곡선 및 형성된 표면피막의 구조를 관찰하여 연구하였다. 실험에 사용된 전해질은 NaOH 수용액에 $Na_2SiO_3$을 혼합하여 구성되었으며, NaOH와 $Na_2SiO_3$의 농도는 각각 0.01 ~ 1.0 M 와 0 ~ 2.0 M 사이로 조절되었다. 0.01 M NaOH 이하의 용액에서는 양극전압이 500 V 이상으로 상승되고 미세한 아크가 시편 표면 전체에 발생했으나, 0.02 M NaOH 이상의 농도에서는 양극전압이 300 V 이하로 감소되었고 아크발생이 관찰되지 않았다. 아크발생이 일어나지 않는 고농도의 0.5 M NaOH 용액의 경우 0.1 M 이상의 $Na_2SiO_3$를 첨가하였을 때 작은 아크의 무리가 발생되었다. 0.5 M NaOH 수용액에 0.1 M ~ 0.2 M $Na_2SiO_3$가 첨가되었을 땐 아크 무리가 발생하나 이내 일부 영역에서만 반복적으로 아크가 발생하는 로컬 버닝 현상이 일어났다. 한편 0.5 M NaOH 수용액에 0.5 M 이상의 $Na_2SiO_3$가 첨가되었을 때는 로컬 버닝이 일어나지 않고 전 표면에 걸쳐서 아크 무리가 이동하며 PEO 피막이 형성되었다. 0.01 M NaOH 수용액에서 형성된 PEO 피막의 두께는 처리 시간에 따라 증가하지 않고 $10{\mu}m$ 이하의 낮은 값을 보였다. 반면에 NaOH와 $Na_2SiO_3$ 혼합수용액에서 형성된 피막의 두께는 약 $30{\mu}m$ 이상의 높은 값을 보였다.

• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.802-808
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• 1996

Silicic acid(SA) was extracted with organic solvents from aqueous sodium silicate solutions acidified with dilute sulfuric acid. Tetrahydrofuran(THF), isopropyl alcohol and acetone were used as organic solvents. The extraction degree of Si and the removal efficiency of Na is determined according to kinds of solvent and the mixing ratios of solvent, sodium chloride and $H_2O$. Optimum conditions for the preparation of high purity SA were THF as an organic solvent, volume ratio of organic solvent/SA : 1 (organic solvent 10ml/10ml SA) and the amount of NaCl addition 2.5g/10ml SA. The extraction degree of Si and the removal efficiency of Na at that point were 86.2% and 99.95% respectively and the purity of SA was 99.96%.

• Korean Journal of Soil Science and Fertilizer
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• v.48 no.5
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• pp.456-463
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• 2015

The objective of this study was to determine the effects of granular type of silicate fertilizer on watermelon growth, yield, and characteristics of soil in the greenhouse. Four different levels of silicate fertilizer, 0(control), 600, 1,200, $1,800kg\;ha^{-1}$ were applied for experiment. The silicate fertilizer was applied as a basal fertilization before transplanting watermelon. Compost and basal fertilizers were applied based on the standard fertilizer recommendation rate with soil testing. All of the recommended $P_2O_5$ and 50% of N and $K_2O$ were applied as a basal fertilization. The N and $K_2O$ as additional fertilization was split-applied twice by fertigation method. Watermelon (Citrullus lanatus Thunb.) cultivar was 'Sam-Bok-KKuol and main stem was from rootstock (bottle gourd: Lagenaria leucantha Standl.) 'Bul-Ro-Jang-Sang'. The watermelon was transplanted on April, 15. Soil chemical properties, such as soil pH, EC, available phosphate and exchangeable K, Mg, and available $SiO_2$ levels increased compared to the control, while EC was similar and the concentrations of soil organic matter decreased. Physical properties of soils, such as soil bulk density and porosity were not different among treatments. The growth characteristics of watermelon, such as stem diameter, fresh and dry weight of watermelon at harvest were thicker and heavier for silicate treatment than the control, while number of node was shorter than the control. Merchantable watermelon increased by 3-5% compared to the control and sugar content was 0.4 to $0.7^{\circ}Brix$ higher than the control. These results suggest that silicate fertilizer application in the greenhouse can improve some chemical properties of soils and watermelon stem diameter and dry weight, which are contributed to watermelon quality and marketable watermelon production.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.341-346
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• 1989

In order to evaluate the oxidation behavior of $\beta$-Sialon, $\beta$-Sialon ceramics was prepared from Si3N4, Al2O3, AlN and Y2O3 system. The specimens were oxidized in an oxygen atmosphere at 1, 20$0^{\circ}C$ for 9days. Oxidation behavior was evaluated by weight gain oxidation process, surface roughness. Microscopy, EDX and X-ray diffraction analysis were also used for the evaluation. The weight and surface roughness ofoxidized specimens were increased with increasing the oxidation time. Oxidized products were mullite, $\alpha$-cristobalite, yttrium aluminum oxide and yttrium silicate oxide.

• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.527-555
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• 2018

High-temperature thermal insulation materials challenge extensive oxide candidates such as porus $SiO_2$, $Al_2O_3$, yttria-stabilized zirconia, and mullite, due to the needs of good mechanical, thermal, and chemical reliabilities at high temperatures simultaneously. Recently, porous rare earth (RE) silicates have been revealed to be excellent thermal insulators in harsh environments. These materials display attractive properties, including high porosity, moderately high compressive strength, low processing shrinkage (near-net-shaping), and very low thermal conductivity. The current critical challenge is to balance the excellent thermal insulation property (extremely high porosity) with their good mechanical properties, especially at high temperatures. Herein, we review the recent developments in processing techniques to achieve extremely high porosity and multiscale strengthening strategy, including solid solution strengthening and fiber reinforcement methods, for enhancing the mechanical properties of porous RE silicate ceramics. Highly porous RE silicates are highlighted as emerging high-temperature thermal insulators for extreme environments.

• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.64-70
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• 2013

In this paper, two white light emitting diodes(LEDs) were manufactured by using two kinds of yellow phosphor, YAG:Ce and $(Sr,Ba)_2SiO_4:Eu$, and their spectroscopic properties were compared and analyzed. We found that the asymmetric double sigmoidal function can be applied to both white LEDs to obtain the center wavelength, the half width, and the skewness parameters. According to this analysis, the half width of the emitting spectrum of silicate phosphor was smaller than that of YAG phosphor, indicating smaller color rendering index. However, the silicate phosphor exhibited better color stability depending on the driving current than the YAG phosphor. The current dependence of the luminous efficacy of both white LEDs was investigated, which showed that efficacy decreased monotonically with current. The efficacy of the silicate-based white LED was lower than that of the YAG-based LED by about 10~12 lm/W.