• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제30회 추계학술대회
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• pp.263-268
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• 1999

Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

• 한국정밀공학회지
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• 제19권8호
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.219-225
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• 2005

To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.

• 한국세라믹학회지
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• 제44권2호
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.85-86
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables arc relatively high because of expensive slurry. In this paper, in order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, abrasives were added in the diluted silica slurry (DSS) in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry (MAS) for the oxide CMP application.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.551-555
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• 2004

In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.129-131
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• 2004

전 세계적으로 반도체 연마제용으로 silica를 많이 사용하고 있으며, 주로 fumed silica 및 colloidal silica로 구분되어진다. 반도체 연마제로서의 가장 중요한 요소는 연마율, defect 및 uniformity 등이 있으며, 현재 defect 및 uniformity는 많은 연구개발을 통하여 증진되었지만 반도체 생산량과 직접 관련된 연마율을 증가시키는 기술은 화학약품 및 slurry의 농도 증가로만 가능하다. 이에 연마제의 전반적인 기능을 상승시켜 기존보다 연마율은 높이고, 결함율을 낮추며, 120nm 이상의 입자크기를 제조하여도 근일한 입도 분포도를 나타내어주고, 장기간 안정하게 사용가능하고, 친환경적인 반도체 연마제를 개발하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.109-112
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• 2003

Recently, CMP (Chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. Also, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• 공업화학
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• 제10권7호
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• pp.1073-1078
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• 1999

본 연구의 목적은 소오다회 제조 공장에서 발생하는 폐슬러리를 미세 실리카가 함유된 공장 폐수의 응집제로 이용 가능한 지를 확인하고 이로부터 폐수 처리비용을 절감하고자 수행되었다. 실리카 함유 폐수를 처리하는 경우 단순히 응집 처리하는 기존의 방법과는 달리 수중에 미립자로 존재하는 실리카를 먼저 겔화(gellation)시킨 후 응집 처리하는 방법을 사용한 경우, 적은 양의 폐슬러리를 사용하여도 양호한 처리수질을 얻을 수 있어 소오다회 폐슬러리를 실리카 함유 폐수 처리를 위한 응집제로 재이용이 가능함을 확인할 수 있다. 폐수 중 실리카의 겔화를 위한 적정 pH는 5정도였으며 겔화에 의한 응집 처리시 약품 사용량의 감소와 응집 수 발생되는 슬러지 양을 감소시킬 수 있었다. 소오다회 폐슬러리로 응집시킨 플럭의 탈수성과 침강성 역시 양호한 결과를 얻을 수 있었다.