Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Polishing Properties by Change of Slurry Temperature in Oxide CMP

산화막 CMP 공정에서 슬러리 온도 변화에 따른 연마 특성

  • 고필주 (조선대학교 전기공학과) ;
  • 박성우 (대불대학교 전기전자공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 서용진 (대불대학교 전기전자공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.03.01
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Abstract

To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.

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References

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