• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.988-991
• /
• 2002

ITO (Indium Tin Oxide) powder was synthesized by precipitation method. ITO colloidal solutions for coating on glass were fabricated by ball milling method. ITO colloidal solution with variation of concentration from 2% to 15% were fabricated ITO thin film measured sheet resistance and transmittance. In the result, 15% sol showed the lowest value of sheet resistance, 2% sol showed the highest value of transmittance. In addition, effect of annealing temperature and $SiO_2$ film were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.522-525
• /
• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.7
• /
• pp.791-798
• /
• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• Applied Science and Convergence Technology
• /
• v.23 no.6
• /
• pp.366-370
• /
• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Journal of Surface Science and Engineering
• /
• v.38 no.2
• /
• pp.55-59
• /
• 2005

ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.

• 전기의세계
• /
• v.30 no.4
• /
• pp.227-230
• /
• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.98-101
• /
• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1430-1432
• /
• 2009

The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (400) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at $180^{\circ}C$ considerably decreased from 50 to 28 ${\Omega}/cm^2$.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.3
• /
• pp.36-41
• /
• 2019

Hybrid-type transparent electrodes were fabricated by depositing carbon nanotubes (CNTs) via spray coating on polyethylene terephthalate (PET) substrates and then coating the CNTs with [poly(3,4-ethylenedioxythiophene)] (PEDOT) films via electro-polymerization. For all of the fabricated electrodes, their surface morphologies, electric sheet resistances, visible transmittances, and color properties (e.g., yellowness) were characterized as functions of the applied voltages and process times used in electro-polymerization. The sheet resistance of the CNTs was significantly reduced by the coating of PEDOT, while their visible transmittances slightly decreased. The yellowness values of the PEDOT-coated CNTs were observed to have substantially decreased via electro-polymerization. The experimental results confirmed that the fabricated hybrid electrodes had desirable properties for the application of transparent electrode in terms of the electrical resistance, optical transmittance, and chromaticity.

• Journal of the Korean Ceramic Society
• /
• v.32 no.5
• /
• pp.601-607
• /
• 1995

The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.