• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.279-283
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• 2014

Al doped ZnO thin films have been deposited by a RF magnetron sputtering technique from a ZnO (2 wt.% $Al_2O_3$) target onto glass substrates heated at temperature ranging from RT to $400^{\circ}C$. X-ray diffraction analysis shows that the deposits have a preferential growth along the c-axis of a hexagonal structure. The full with at half maximum decreases from 0.45 to $0.43^{\circ}$ in the studied temperature range. The root main square surface roughness increases with substrate temperature from 1.89 to 2.67 nm. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is red-shifted with substrate temperature from RT to $400^{\circ}C$. The sheet resistance increases from 92 ohm/sq to 419 ohm/sq when the deposition temperature increases from RT to $400^{\circ}C$. The increment of sheet resistance is caused by lowered carrier concentration resulting from an increase in surface roughness.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• Journal of the Korean Society of Radiology
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• v.13 no.7
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• pp.1015-1024
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• 2019

In the medical field, X-rays are essential in the diagnosis and treatment of diseases, and the use of X-rays continues to increase with the development of imaging technology, but X-rays have the disadvantage of radiation exposure. Although lead protection tools are used in clinical practice to protect against radiation exposure, lead is classified as a heavy metal and can cause harmful reactions such as lead poisoning. Therefore, the purpose of this study is to investigate the usefulness of the shield fabricated using materials of FDM (Fused Deposition Modeling) 3D printer. In order to confirm the filament's line attenuation factor, phantoms were fabricated using PLA, XT-CF20, Wood, Glow and Brass, and CT scan was performed. And the shielding sheet of 100 × 100 × 2 mm size was modeled, the dose and shielding rate was measured by using a diagnostic X-ray generator and irradiation dose meter, and the shielding rate with lead protection tools. As a result of the experiment, the CT number of the brass was measured to be the highest, and the shielding sheet was manufactured by using the brass. As a result of confirming with the diagnostic X-ray generator, the shielding rate was increased in the shielding sheet having a thickness of 6 mm upon X-ray irradiation under the condition of 100 kV and 40 mAs. It measured by 90% or more, and confirmed that the shielding rate is higher than apron 0.25 mmPb. As a result of this study, it was confirmed that the shield fabricated by 3D printing technology showed high shielding rate in the diagnostic X-ray region. there was.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Agricultural and Biosystems Engineering
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• v.3 no.1
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• pp.44-54
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• 2002

A brief review of current status in the field of agricultural spray and future research challenges are presented. Researches on the pesticides sprays, pollen sprays, postharvest sprays, and biological control agent sprays among the various applications of agricultural spray were selected and reviewed. In the agrochemical sprays, the techniques to increase the deposition such as electrospray and reduce the drift such as introductions of drift retardants and of mechanical means are reviewed. The introduction of mechanical means includes low drift, air-assisted, air inclusion, shield or shroud assisted and pulse flow nozzles. For flat fan nozzles, the data of breakup length and thickness of liquid sheet are essential to understand the atomization processes and develop the transport model to target In the air-assisted spray technology to reduce drift, further works on the effect of application height on drift and air assistance on droplet size should be followed. In addition, methods for quantifying the included air in the air inclusion techniques are required. The atomization characteristics of biopesticides spray are not being elucidated and the formulations of biopesticides should be taken into account the spray characteristics of existing nozzle and sprayer. A few researches on the droplet size of fallout can be found in the literature. A combined technology with electrostatic method into one of method for the reduction of drift may be an effective strategy for increasing deposition and reducing drift. Only an integrated approach involving all stakeholders such as engineers, chemists, and biologists, etc. can result in improved application of agricultural spray.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.3
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• pp.109-112
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• 2016

We have considered the influence of electron irradiation on the optical and electrical properties of $SnO_2$ thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of $277{\Omega}/{\square}$ and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of $SnO_2$ thin film in this study.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.499-503
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• 2009

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon (Ar) and oxygen ($O_2$) gas atmosphere, and then post deposition electro annealed for 20 minutes in a $4{\times}10^{-1}$ Pa vacuum. Electron bombardment with an accelerating voltage of 100 V increased the substrate temperature to $120^{\circ}C$. XRD analysis of the deposited ITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222), and (400) planes. The sheet resistance of ITO films decreased from 103 to $82{\Omega}/\square$. The optical transmittance of ITO films in the visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealing increased the work function of ITO films from 4.4 to 4.6 eV. The electro annealed films demonstrated a larger figure of merit of $3.0{\times}10^{-3}{\Omega}^{-1}$ than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances than as deposited ITO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.969-973
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• 2009

In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.187-192
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• 2008

A simplified model for an isolated aluminum particle burning in air is presented. Burning process consists of two stages, ignition and quasi-steady combustion (QSC). In ignition stage, aluminum which is inside of oxide film melts owing to the self heating called heterogeneous surface reaction (HSR) as well as the convective and radiative heat transfer from ambient air until the particle temperature reaches melting point of oxide film. In combustion stage, gas phase reaction occurs, and quasi-steady diffusion flame is assumed. For simplicity, 1-dimesional spherical symmetric condition and flame sheet assumption are also used. Extended conserved scalar formulations and modified Shvab-Zeldovich functions are used that account for the deposition of metal oxide on the surface of the molten aluminum. Using developed model, time variation of particle temperature, masses of molten aluminum and deposited oxide are predicted. Burning rate, flame radius and temperature are also calculated, and compared with some experimental data.