• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.125-134
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• 2016

We propose an efficient high voltage level shifter for a high side Buck converter driving a light-emitting diode (LED) lamp. The proposed circuit is comprised of a low voltage pulse width modulation (PWM) signal driver, a coupling capacitor, a resistor, and a diode. The proposed method uses a property of a PWM signal. The property is that the signal repeatedly transits between a low and high level at a certain frequency. A low voltage PWM signal is boosted to a high voltage PWM signal through a coupling capacitor using the property of the PWM signal, and the boosted high voltage PWM signal drives a p-channel metal oxide semiconductor (PMOS) transistor on the high side Buck converter. Experimental results show that the proposed level shifter boosts a low voltage (0 to 20 V) PWM signal at 125 kHz to a high voltage (370 to 380 V) PWM signal with a duty ratio of up to 0.9941.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.86-96
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• 2002

Oligomer type anionic surfactants(RmM-Na or RmD-Na} were synthesized from $C_{8}{\sim}C_{16}$ long chain alkylvinylether and maleic anhydride (or maleic diethylether). And also their fluorescent anionic surfactants (RmF- Na) were obtained from alkali neutralization which opens the lactone ring of the condensing materials produced by maleic anhydride alkylvinylether copolymer and 3-aminophenol. The measurement results for the surface active properties of water soluble oligomer type anionic surfactants with fluorescent structure (RmF-Na) exhibited a remarkable surface tension lowing property, foam breaking property, and a ernulsing power.

• Journal of Electrical Engineering and Technology
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• v.5 no.4
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• pp.640-645
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• 2010

This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 nm and the diameter of 30-60 nm on the Ag/Ti/PES substrate at $90^{\circ}C$ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.1-7
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• 2006

A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.747-750
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• 2007

This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing etch, PR strip and cleaning condition. Charges distributed along the metal line acts as a source of tungsten (W) plug corrosion when associated with following cleaning solution. In cleaning process after metal etch and PR strip, chemical selection is significantly important in terms of metal corrosion. Optimal corrosion preventive PH, no metal attack (choice of optimal inhibitants), high by product removal efficiency and optimal de ionized water treatment condition is critical to the metal corrosion prevention.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.510-514
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• 2013

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. InGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilayer thin films have been deposited on XG glass substrate by RF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRD analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity property has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30% at IR range.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.105-111
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• 2019

The TADF (Thermally Activated Delayed Fluorescence)-based OLED patents were analyzed and 4410 of patents were selected at the first step. And 975 patents were screened at second step. Finally, 39 key patents were selected. Patent qualitative analysis was performed in these patents to find which of the four property (lifetime, efficiency, color purity, driving voltage) of TADF was improved. Also, the variation of the hosts and dopants in patented TADF material were surveyed and their combination was analyzed. According to the analysis of the variation and the combination, some of TADF compounds were used as an assistant dopant to transfer energy. In addition, it tended to transfer energy by forming exciplex that shows TADF characteristics. These were similar to the mechanism of the introduced hyper fluorescence and could solve the inherent TADF problems. Finally, patent citation network was illustrated to visualize the patent citations and citations relationship of the major applicants in the current TADF-based OLED technology. The leading patent applicant organization was revealed as Idemitsu Kosan, Semiconductor Energy Laboratory, UDC, Princeton University, Merck and Nippon Steel & Sumikin Chemical, which had lots of reference patents 559, 524, 477, 310, 258, and 167, respectively.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.36-47
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• 2024

The purpose of this study is to identify the factors that impact the user's intention to accept technology when Introducing new information security systems for the workers of a semiconductor company. The findings of this study were as follows. First, the factors of a company's information security systems, namely reliability, expertise, availability, security, and economic efficiency, all significantly and positively impacted performance expectations. Second, the performance expectation of introducing information security systems for a company significantly and positively impacted the intention to accept technology. Third, the social impact of introducing information security systems for a company had a significant and positive impact on technology acceptance intention. Fourth, the facilitating conditions for introducing a company's information security systems significantly and positively impacted technology acceptance intention. Fifth, as for the moderating effect of innovation resistance, the moderating effect was significant in the paths of [performance expectation -> technology acceptance intention], [social impact -> technology acceptance intention], and [facilitating conditions -> technology acceptance intention]. The implication of this study is that the factors to be considered when introducing information security systems were provided to companies that are the actors of their proliferation, providing the base data to lay the foundation for introducing security technologies and their proliferation.