• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.21-27
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• 2012

The optical diffuser for direct-lit LED backlight unit was prepared by using extrusion compounding followed by thermoforming process. Poly(methyl methacrylate) (PMMA) with superior optical characteristics and polycarbonate (PC) with good thermal property were used as base resins, and crosslinked polystyrene (PS) and PMMA beads as diffusing agents were incorporated into resin matrix to derive light scattering and diffusing action. In the compounded plate, the diffusing beads were observed to be dispersed uniformly and distinctly in the continuous phase. The inclusion of polymeric beads up to 3 wt% substantially enhanced the optical characteristics such as luminance, luminance uniformity, haze for the diffuser. Two different diffusers of PC and PMMA-based compound with various compositions were compared in terms of measured optical, thermal, and mechanical properties, which would be expected to be utilized for the industrial application of LED backlight unit.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.52-59
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• 2019

Styrene-butadiene rubber (SBR) composites, incorporated with graphene, molybdenum disulfide and their hybrid in different filling ratio, were fabricated by a two roll-mill. The dispersion states of all the samples' matrix were employed by carbon black dispersion tester. The curing properties of the pre-vulcanized rubber composites were investigated, after molding by heating press machine, the tensile strength, storage modulus, friction coefficient, the swelling property had also been tested according to ASTM. The composite G1M10 (filling with 1 phr graphene and 10 phr molybdenum) showed the best mechanical properties and viscoelastic properties in this research with a better filler dispersion state and more compact matrix structure.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.1-6
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• 2013

The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2200-2206
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• 2012

One-dimensional $TiO_2$ array grown on optically transparent electrode holds a promise as a photoelectrode for photoelectrochemical water splitting; however, its crystal structure is rutile, imposing constraints on the potent use of this nanostructure. To address this issue, a heterojunction with type-II band alignment was fabricated using atomic layer deposition (ALD) technique. One-dimensional core/shell structured $TiO_2$/ZnO heterojunction was superior to $TiO_2$ in the photoelectrochemical water splitting because of better charge separation and more favorable Fermi level. The heterojunction also possesses better light scattering property, which turned out to be beneficial even for improving the photoelectrochemical performance of semiconductor-sensitized solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.11-16
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• 2019

The four different polymer compounds were manufactured with the two kinds of plasticizers [(di-2-ethylhexyl sebacate(DOS), and di-2-butyl sebacate(DBS)] and two different additive amounts(18, 26 phr) of the same plasticizer for making cable sheath for ship. Ethylene-vinylacetate, ethylene-propylene-diene-copolymer as matrix polymers and ethylene-vinylacetate grafted maleic anhydride as coupling agent were selected for compounding with fire retardant, closslinking agent, filler, and other additives besides plasticizer. The compound including DOS showed the higher ${\Delta}T$ than that including DBS at the same additive amount in the rheology test. And with increasing plasticizer, the compounds resulted in lower tensile strength and higher elongation by lubricating effect of plasticizer. DOS yielded better aging resistance and cold resistance than DBS due to the good heat resistance and low solidifying point of DOS compared to DBS.

• Advances in nano research
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• v.10 no.4
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• pp.339-347
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• 2021

In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C_[14,17], C_[14,11], C_[14,16], C_[14,10] show a metallic nature, and polyprismanes C_[14,5], C_[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C_[14,11], C_[14,10] and semiconductor C_[14,5], C_[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C_[14,17] - C_[14,11] - C_[14,5] and C_[14,16] - C_[14,10] - C_[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

• Current Applied Physics
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• v.18 no.11
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.