• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.277-279
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• 2016

Nanowire-FET은 Gate-All-Around (GAA) 구조로 차세대 반도체 소자 구조로 여겨지고 있다. Nanowire-FET은 채널 두께에 따라 $I_D-V_G$ curve에 매우 중요한 영향을 끼친다. 따라서 본 논문은, Edison 시뮬레이션을 이용하여 Nanowire-FET의 Silicon Thickness에 따른 여러 특성을 비교하여 최적 Silicon Thickness에 대해 연구하였다.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.1-4
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• 2007

Carbon nanotube oscillators encapsulating copper nanowire were investigated by molecular dynamics simulations. The excess forces due to the carbon-carbon van der Waals interactions are higher than the excess force due to carbon-copper interactions. And the masses of copper atoms are higher than those of carbon atoms. So, the carbon atoms are easier accelerated than the copper atoms. When the encapsulated copper nanowire deforms the encapsulating nanotube, the frequency can not be estimated by the mass-frequency dependence in classical oscillation theory.

• 에너지공학
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• 제19권1호
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• pp.21-24
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• 2010

본 연구에서는 금속 전극사이에 팔라듐 나노선을 성장시키기 위해 직류와 이중전기영동 방법을 이용한 전기화학적 방법을 제안하였다. 팔라듐 나노선의 최적 성장 조건들을 파악하기 위해 교류의 인가 주파수 및 전압의 영향들이 조사되었다. 합성된 팔라듐 나노선들은 수백 나노미터의 직경과 $8\;{\mu}m$ 길이를 갖고 있으며, $1\;k{\Omega}$의 우수한 전기적 저항 특성을 보였다. 최종적으로 완성된 팔라듐 나노선들은 상온에서 수소 농도 100 ppm에서 2500 ppm의 범위에서 수소검출 평가를 수행하였으며, 수소센서에 적합한 우수한 검출 감도 및 응답시간을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.260-263
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• 2004

During the last few years, there have been many efforts on the fabrication of electronic and optical devices based on semiconductor nanowires. Room-temperature ultraviolet lasing in GaN nanowire, ultraviolet light sensing in ZnO nanowire, and dramatically improved hall mobility in Si nanowire have been demonstrated in this article. The studies on semiconductor nanowire based electronic and optical device is reviewed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• 한국진공학회지
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• 제18권4호
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• pp.259-265
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• 2009

본 연구에서는 열증착법을 이용하여 합성된 단결정의 산화아연 나노선들을 이용하여 전계효과트랜지스터를 제작하여 광학, 표면반응 및 전기화학적인 거동들에 대한 기초 연구들을 수행하였다. 100 nm의 지름과 길이 5 um 길이를 갖는 단결정 산화아연나노선의 전자 농도와 이동도는 각각 $1.30{\times}10^{18}cm^{-3}$과 $15.6cm^2V^{-1}s^{-1}$이었으며, 자외선을 나노선에 조사한 경우 약 400배 정도 전류가 증가하였다. 또한 나노선들은 여러 농도의 수소와 일산화탄소에 대해 잘 알려진 표면반응으로 기인한 기체 감지 특성을 보였고, 0.1 M NaCl 전해질 내에서 전형적인 산화아연의 나노선의 전기적 특성을 유지함을 확인하였다.

• Journal of the Optical Society of Korea
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• 제15권4호
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• pp.407-414
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• 2011

We analyze the cooperative spontaneous emission of optically excited nanocrystals into surface plasmon polaritons propagating on the surface of a cylindrical metallic nanowire. The spontaneous emission probability of the nanocrystals is obtained by perturbative expansions with and without dipole-dipole interaction among nanocrystals in order to see the cooperative effects. The spontaneous emission probability depends on the radial and axial distributions, as well as on the dipolar orientation of nanocrystals. It is shown that the spontaneous emission probability is strongly influenced by dipole-dipole interaction, axial distribution, and dipolar orientation of nanocrystals for closely spaced nanocrystals.

• Progress in Superconductivity
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• 제9권2호
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• pp.136-139
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• 2008

InAs semiconductor nanowires can provide a promising platform to integrate superconducting quantum circuit, which exploits tunable supercurrent under the operation of gate voltage. We report temperature and magnetic field dependence of the nanowire superconducting junctions, which is in agreement with the proximity-effect theory of superconductor-normal metal-superconductor weak link. Superconducting coherence length of the InAs nanowire is estimated from the fit and magnetic-field dependence of the critical current and the subgap structure of dI/dV is discussed as well.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.80-87
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• 2011

Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.185-190
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• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.