• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.277-279
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• 2016

Nanowire-FET은 Gate-All-Around (GAA) 구조로 차세대 반도체 소자 구조로 여겨지고 있다. Nanowire-FET은 채널 두께에 따라 $I_D-V_G$ curve에 매우 중요한 영향을 끼친다. 따라서 본 논문은, Edison 시뮬레이션을 이용하여 Nanowire-FET의 Silicon Thickness에 따른 여러 특성을 비교하여 최적 Silicon Thickness에 대해 연구하였다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.1-4
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• 2007

Carbon nanotube oscillators encapsulating copper nanowire were investigated by molecular dynamics simulations. The excess forces due to the carbon-carbon van der Waals interactions are higher than the excess force due to carbon-copper interactions. And the masses of copper atoms are higher than those of carbon atoms. So, the carbon atoms are easier accelerated than the copper atoms. When the encapsulated copper nanowire deforms the encapsulating nanotube, the frequency can not be estimated by the mass-frequency dependence in classical oscillation theory.

• Journal of Energy Engineering
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• v.19 no.1
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• pp.21-24
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• 2010

We present a novel electrochemical method to fabricate a single Pd nanowire based on direct current assisted dielectropheresis (DEP) process between two predefined metal electrodes. The electrochemical methods was investigated as functions of frequency and voltage for optimal growth conditions of Pd nanowire. The synthesized Pd nanowire have a good resistance of $1\;k{\Omega}$, diameters of several hundred nanometers on average and lengths of $8\;{\mu}m$. Finally, the single Pd nanowire was capable of detecting hydrogen in the concentration range from 100 to 2500 ppm with high sensitivity and response time, thus demonstrating its suitability for use as a hydrogen sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.260-263
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• 2004

During the last few years, there have been many efforts on the fabrication of electronic and optical devices based on semiconductor nanowires. Room-temperature ultraviolet lasing in GaN nanowire, ultraviolet light sensing in ZnO nanowire, and dramatically improved hall mobility in Si nanowire have been demonstrated in this article. The studies on semiconductor nanowire based electronic and optical device is reviewed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.259-265
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• 2009

We fabricated the field effect transistor using single crystalline ZnO nanowires synthesized by a conventional thermal evaporation method and investigated their basic properties under the various conditions such as ultraviolet irradiation, reducing gas and electrolyte. The typical carrier concentration and mobility of the single crystalline ZnO nanowire with a diameter of 100 nm and length of 5 um were $1.30{\times}10^{18}cm^{-3}$ and $15.6cm^2V^{-1}s^{-1}$, respectively. The current of ZnO nanowire under ultraviolet irradiation significantly increased about 400 times higher as compared to in the darkness. In addition, the ZnO nanowire showed typical sensing characteristics for $H_2$ and CO due to well-known surface reactions and typical current-voltage characteristics under the 0.1 M NaCl electrolyte.

• Journal of the Optical Society of Korea
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• v.15 no.4
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• pp.407-414
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• 2011

We analyze the cooperative spontaneous emission of optically excited nanocrystals into surface plasmon polaritons propagating on the surface of a cylindrical metallic nanowire. The spontaneous emission probability of the nanocrystals is obtained by perturbative expansions with and without dipole-dipole interaction among nanocrystals in order to see the cooperative effects. The spontaneous emission probability depends on the radial and axial distributions, as well as on the dipolar orientation of nanocrystals. It is shown that the spontaneous emission probability is strongly influenced by dipole-dipole interaction, axial distribution, and dipolar orientation of nanocrystals for closely spaced nanocrystals.

• Progress in Superconductivity
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• v.9 no.2
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• pp.136-139
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• 2008

InAs semiconductor nanowires can provide a promising platform to integrate superconducting quantum circuit, which exploits tunable supercurrent under the operation of gate voltage. We report temperature and magnetic field dependence of the nanowire superconducting junctions, which is in agreement with the proximity-effect theory of superconductor-normal metal-superconductor weak link. Superconducting coherence length of the InAs nanowire is estimated from the fit and magnetic-field dependence of the critical current and the subgap structure of dI/dV is discussed as well.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.80-87
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• 2011

Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.185-190
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• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.