• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.645-651
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• 1993

The growth of semi-insulating(SI) high resistant undoped GaAs epilayer has been studied to solve the problems ocurring when GaAs IC is fabricated by the widely used ion implantation directly into the SI GaAs substrate. The EPD ditribution of the SI substrates has been examined, and the suitability of the buffer layers grown by MOCVD and MBE, respectively, has been tested for IC fabrication through leakage current measurement. IJngated FET has been fabricated on the SI epilayer and leakage current through the buffer layer has been measured. In the case of MOCVD grown 1$\mu\textrm{m}$-thick buffer layer, the leakage current is as small as about 270nA/mm, and this value does not affect the pinch-off of FET. In this case, the epilayer quality is affected by the substrate defects because the leakage current distribution is coincided with the EPD distribution of the SI substrate. The 2$\mu\textrm{m}$-thick buffer layer grown by MBE, however, has the better quality, and shows the lower leakage current(40nA/mrn) and higher uniformity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.504-508
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• 2022

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.125-128
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• 2012

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.265-274
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• 2010

The excellent performance and stability of dry-vacuum-pump is essential to create and maintain high quality vacuum condition in semiconductor and display process. The development of dry-vacuum-pump needs systematic consideration for target application as well as delicate mechanical issues. Here, we introduce a development procedures of dry-vacuum-pump for semiconductor-process-class.

• Journal of Ceramic Processing Research
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• v.20 no.5
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• pp.484-489
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• 2019

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4652-4659
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• 2022

Among the detector materials available at room temperature, thallium bromide (TlBr), which has a relatively high atomic number and density, is widely used for gamma camera imaging. This study aimed to verify the usefulness of TlBr through quantitative evaluation by modeling detectors of various compound types using Monte Carlo simulations. The Geant4 application for tomographic emission was used for simulation, and detectors based on cadmium zinc telluride and cadmium telluride materials were selected as a comparison group. A pixel-matched parallel-hole collimator with proven excellent performance was modeled, and phantoms used for quality control in nuclear medicine were used. The signal-to-noise ratio (SNR), contrast to noise ratio (CNR), sensitivity, and full width at half maximum (FWHM) were used for quantitative analysis to evaluate the image quality. The SNR, CNR, sensitivity, and FWHM for the TlBr detector material were approximately 1.05, 1.04, 1.41, and 1.02 times, respectively, higher than those of the other detector materials. The SNR, CNR and sensitivity increased with increasing detector thickness, but the spatial resolution in terms of FWHM decreased. Thus, we demonstrated the feasibility and possibility of using the TlBr detector material in comparison with commercial detector materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.347-357
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• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.17-17
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• 2009

We report the invention of a direct growth method termed On-Film Formation of Nanowire (OFF-ON) for making high-quality single-crystal nanowires, i.e. Bi and $Bi_2Te_3$, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal semi-metallic Bi and compound semiconductor $Bi_2Te_3$ nanowires from sputtered Bi and BiTe films after thermal annealing, respectively. The mechanism for nanowire growth is stress-induced mass flow along grain boundaries in the polycrystalline films. OFF-ON is a simple but powerful method for growing perfect single-crystal semi-metallic and compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date. Our results suggest that Bi and $Bi_2Te_3$ nanowires grown by OFF-ON can be an ideal material system for exploring their unique thermoelectric properties due to their high-quality single crystalline and high conductivity, which have consequence and relevance for high-efficiency thermoelectric devices.