• 한국연소학회:학술대회논문집
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• 2013.06a
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• pp.45-46
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• 2013

Stabilization characteristics of highly $N_2$-diluted $CH_4-O_2$ flame in an axially two-section porous inert medium were experimentally investigated for its application to the waste gas scrubber in semiconductor manufacturing processes. The flame behaviors were observed with respect to the fuel and $N_2$ flow rates and the equivalence ratios. As a result, four kinds of flame behaviors such as stable, flashback crossing the interface, blowout and sudden extinction were observed. It was also found that there exists two flame regime divided by a critical fuel flow rate. In addition, the flame stability was discussed based on the $N_2$ index which means the abatement capacity of our combustor in scrubbing the waste gas from the semiconductor processes.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.75-78
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• 2017

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2008.05a
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.88-95
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• 2017

The usage of toxic gas in Korea is increasing in the development of high-tech industries such as semiconductors, displays and solar panels. The recent survey of domestic toxic gas consumption indicates an increase in annual average of 12.4 percent, but it is still focused on usage, and it is negligent in safety and treating the post. In September 2012, an accident occurred in Gu-mi involving hydrofluoric acid leak demonstrates the absence of safety management. Due to the incident, the government, industry and academia have been interested in chemical substances(toxic gas), and the government-led safety management has been established and implemented, but there are still a lot of safety blind spots. The purpose of this study is to develop effective measurement methods for the destruction or removal efficiency of gaseous materials emitted from the Scrubber used in the semiconductor and display industries. Also, this study demonstrated how toxic gas facilities can be applied without error by verification test for the measurement method guideline of the destruction or removal efficiency of the green-house gas reduction facility in the semiconductor and display industries used by the National Institute of Environmental Research and the UNFCCC, and suggested the differentiated measurement methods for toxic gas reduction facilities, and the third party certification for safety facilities is needed to prevent toxic gas accidents.

• Journal of the Korean Institute of Gas
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• v.25 no.2
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• pp.42-51
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• 2021

Facilities that supply specialty gases used in semiconductor manufacturing mainly handles with hazardous and dangerous substances with flammable, toxic, and corrosive properties, and gas cabinets are mainly used as such supply facilities. The effects of the supply facilities were analyzed for each leak through the rupture disk in the gas cabinet and a leak where the leak hole. In this case, gas leaked to the outside depending on the leak area. It is a factor that creates a risk depending on the concentration of the leaked gas. Depending on the risk of leakage, all measures such as safe operation procedures should be reviewed again.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.52-55
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• 2024

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.

• Advances in nano research
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• v.3 no.1
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• pp.1-11
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• 2015

Thin film ethanol sensors made from ${\alpha}-Fe_2O_3$ decorated with multiwall carbon nanotubes(MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated ${\alpha}-Fe_2O_3$/MWCNTs (25:1 weight ratios) nanocomposite powder was investigated using the scanning electron microscopy and X-ray diffraction techniques. The thickness of thin films has been determined from ellipsometric measurements. The response of manufactured sensors was investigated at different temperatures of the sensor work body and concentration of gas vapors. Good response of prepared sensors to ethanol vapors already at work body temperature of $150^{\circ}C$ was shown.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.113-122
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• 1996

As integrity of semiconductor device is increased, accurate and efficient modeling and recipe generation of semiconductor fabrication procsses are necessary. Among the major semiconductor manufacturing processes, dry etc- hing process using gas plasma and accelerated ion is widely used. The process involves a variety of the chemical and physical effects of gas and accelerated ions. Despite the increased popularity, the complex internal characteristics made efficient modeling difficult. Because of difficulty to determine the control input for the desired output, the recipe generation depends largely on experiences of the experts with several trial and error presently. In this paper, the optimal control of the etching is carried out in the following two phases. First, the optimal neural network models for etching process are developed with genetic algorithm utilizing the input and output data obtained by experiments. In the second phase, search for optimal control inputs in performed by means of using the optimal neural network developed together with genetic algorithm. The results of study indicate that the predictive capabilities of the neural network models are superior to that of the statistical models which have been widely utilized in the semiconductor factory lines. Search for optimal control inputs using genetic algorithm is proved to be efficient by experiments. (author). refs., figs., tabs.

• Design & Manufacturing
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• v.13 no.1
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.