• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• Journal of Power System Engineering
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• v.12 no.6
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• pp.70-77
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• 2008

The purpose of this study is to compare the quality of digital radiography image with that of classical film images for welded structure in power plants. The CMOS(Complementary Metal Oxide Semiconductor) flat panel detecter and Agfa D5 film are used to image flaw specimens respectively. In the test, CMOS flat panel detector has been determined to have a better image than that of film image. In the IQI(Image Quality Indicator) transmission test, one or two more line can be seen in digital image than in film image. Digital Radiography Test enabled to successfully detect all defects on the weld specimens fabricated with real reheat stem pipe and boiler tube as well. In the specific comparison test, Digital radiography test detected micro flaws in the size of 0.5 mm in length by 0.5 mm in depth. However, film test has limited it to 1.0 mm in length by 1.0 mm in depth. As a result of this study, digital radiography technology is estimated well enough to perform the inspection in the industry with far more cost effective way, compared to the classical film test.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.220-222
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• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.272-272
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• 2014

SnO thin films, 100 nm in thickness, were deposited on glass substrates by RF magnetron sputtering. A stack structure of $SnO_2/SnO$, where few nanometers of $SnO_2$ were determined on the SnO thin film by X-ray photoelectron spectroscopy. In addition, XPS depth profile analysis of the pristine and heat treated thin films were introduced. The electrical behavior of the as-sputtered films during the annealing was recorded to investigate the working conditions for the SnO sensor. Subsequently, The NH3 sensing properties of the SnO sensor at operating temperature of $50-200^{\circ}C$ were examined, in which the p-type semiconducting sensing properties of the thin film were noted. The sensor shows good sensitivity and repeatability to $NH_3$ vapor. The sensor properties toward several gases like $H_2S$, $CH_4$ and $C_3H_8$ were also introduced. Finally, a sensing mechanism was proposed and discussed.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.