• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.27-38
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• 2002

A new self-consistent mathematical model for semiconductor quantum well device was developed. The model was based on the direct solution of the Boltzmann transport equation, coupled to the Schrodinger and Poisson equations. The solution yielded the distribution function for a two-dimensional electron gas(2DEG) in quantum well devices. To solve the Boltzmann equation, it was transformed into a tractable form using a Legendre polynomial expansion. The Legendre expansion facilitated analytical evaluation of the collision integral, and allowed for a reduction of the dimensionality of the problem. The transformed Boltzmann equation was then discretized and solved using sparce matrix algebra. The overall system was solved by iteration between Poisson, Schrodinger and Boltzmann equations until convergence was attained.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.2
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• pp.63-70
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• 2003

In this paper, an MFC (Mass Flow Controller) which is widely used in many semiconductor manufacturing processes for controlling the mass flow rate of a gas is designed and implemented using the PIC 16F876 of Microchip, Inc. The MFC implemented in this thesis has the form of hybrid-type, i.e., the mixed-type of the analog-type MFC, which has many problems such as low accurary, and digital-type MFC, which use an expensive DSP (Digital Signal Processor) and an ADC (Analog to Digital Convertor) with high precision. The MFC is consists of the sensor unit, the control unit and the actuator unit, and it has used the automatic calibration algorithm and the reference table method for the improvement of the performance.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.246-249
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• 2013

Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of $H_2$ and $CH_4$ and an ambient annealing temperature of $1,000^{\circ}C$ were used during the deposition for 30 Min., and for the transfer onto $SiO_2/Si$ and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on $SiO_2/Si$ substrate showed a low intensity of the G/2D ratio, because the polarity of the $SiO_2$ layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.782-787
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• 2010

Recently the solution-based thin film technology has often been treated in the field of device fabrication owing to easy process and convenience for the development of various semiconductor devices and sensors. We deposited on glass substrate single-walled carbon nanotubes (SWNTs)/silane hybrid thin films by multiple spray-coating which is one of solution-based processes, and examined their electrical response for humidity. Generally silane binders which are often mixed in carbon nanotube (CNT) solution to adhere CNTs to substrate well form easily each own functionalized group on the surface of CNTs after they are hardened by way of the hydrolysis reaction. In this work, we investigated how silane binders (TEOS (tetraethoxy silane), MTMS (methyltrimethoxysilane) and VTMS (vinyltrimethoxysilane)) in CNT thin films make effect to their electrical response on humidity. As the result, we found that the resistance in the samples using TEOS was changed dramatically while it was almost invariant in the samples using MTMS and VTMS for increasing humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.345-348
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• 2012

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.649-652
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• 1992

ECR(Electron Cyclotron Resonance) occure at ${\omega}_c$=${\omega}$, ${\omega}_c$:electron cycltron frequency, ${\omega}$:electromagnetic wave frequency. ECR system have several merit, 1) power transefer efficiency 2) low neutral gas pressure (below 1 mTorr) 3) high plasma density($10^{12}$ $cm^{-3}$). It is applicated variously in the field of semiconductor and new materials as the manufacturing equipment. Magnetic field in ECR system contruct resonance layer (${\omega}$=2.45GHz, $B_z$=875 Gauss) and control plasma. Plasma is almost generated at resonance layer. If the distance between substrate and resonance layer is short, uniformity of plasma is related with profile of resonance layer. Plasma have the property "Cold in Field", so directonality of magnetic field is one of the control factors of anisotropic etching. In this study, we calculate B field and flux line distribution, optimize geometry and submagnet current and improve of magnetic field directionality (99.9%) near substrate. For the purpose of calculation, vector potential A(r,z) and magnetic field B(r,z), green function and numerical integration is used. Object function for submagnet optimization is magnetic field directionality on the substrate and Powell method is used as optimization skim.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.829-831
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• 1992

Ultrathin metal-oxide-semiconductor(MOS) gate dielectrics have been fabricated by conventional thermal oxidation in $N_2O$ ambient. Compared to oxides grown in $O_2$, $N_2O$ oxides exhibit significantly low flatband voltage and small shift in flatband voltage. $N_2O$ oxidation induces a slight decrease in mobile ionic charge density($N_m$), fixed charge density($N_f$) and surface state charge density($N_{ss}$). This study establishes that $N_2O$ oxides may have a great impact on future MOS ULSI technology in which ultrathin gate dielectrics are required.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1720-1725
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• 2015

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO₂, Gd₂O₃, and Si₃N₄ films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si₃N₄ dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.662-662
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• 2013

Over the last several decades, innovative light-harvesting devices have evolved to achieve high efficiency in solar energy transfer. Research on the mechanisms for plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on $TiO_2$. The photocurrent is generated by absorption of photons when electrons have enough energy to travel over the Schottky barrier and into the titanium oxide conduction band. The correlation between the hot electrons and the surface plasmon is confirmed by matching the range of peaks between the incident photons to current conversion efficiency (IPCE, flux of collected electrons per flux of incident photons) and UV-Vis spectra. The photocurrent measured on Ag/$TiO_2$ exhibited surface plasmon peaks; whereas, in contrast to the Au/$TiO_2$, a continuous Au thin film doesn't exhibit surface plasmon peaks. We modified the thickness and morphology of a continuous Ag layer by electron beam evaporation deposition and heating under gas conditions and found that the morphological change and thickness of the Ag film are key factors in controlling the peak position of light absorption.