• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.57-62
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• 2022

The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF₄/O₂/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.23-27
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• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• Journal of the Semiconductor & Display Technology
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• v.23 no.1
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• pp.12-18
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• 2024

The accelerated pace of climate crisis due to continuous industrialization and greenhouse gas emissions necessitates sustainable solutions that simultaneously address mitigation and adaptation to climate change. Naturebased Solutions (NbS) have gained prominence as viable approaches, with Green Infrastructure being a representative NbS. Green Infrastructure involves securing green spaces within urban areas, providing diverse climate adaptation functions such as removal of various air pollutants, carbon sequestration, and isolation. The proliferation of Green Infrastructure is influenced by the quantification of improvement effects related to various projects. To support decision-making by assessing the climate vulnerability of Green Infrastructure, the U.S. Department of Agriculture (USDA) has developed i-Tree Tools. This study proposes a comprehensive evaluation approach for climate change adaptation types by quantifying the climate adaptation performance of urban Green Infrastructure. Using i-Tree Canopy, the analysis focuses on five urban green spaces covering more than 30 hectares, considering the tree ratio relative to the total area. The evaluation encompasses aspects of thermal environment, aquatic environment, and atmospheric environment to assess the overall eco-friendliness in terms of climate change adaptation. The results indicate that an increase in the tree ratio correlates with improved eco-friendliness in terms of thermal, aquatic, and atmospheric environments. In particular, it is necessary to prioritize consideration of the water environment sector in order to realize climate change adaptive green infrastructure, such as increasing green space in urban areas, as it has been confirmed that four out of five target sites are specialized in improving the water environment.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.411-420
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• 2017

In this paper, two methods of making the Pd-added $SnO_2$ ($Pd-SnO_2$) powder with pure tetragonal phase by the hydrazine method were suggested and compared in terms of crystal structure, surface morphology, and alcohol gas response. One of the addition methods is to use $PdCl_2$ as a Pd source, the other is to use Pd-based organic with oleylamine (OAM). When Pd concentration was increased from 0 to 5 wt%, the average grain size of $Pd-SnO_2$ made with Pd-OAM were decreased from 32 to 12 nm. In the case of using with $PdCl_2$, grain size of the $PdCl_2$ fell to less than 10 nm. However, agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The crack-free $Pd-SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of patterned Pt electrodes by optimized ink dropping method. Also, the 2 wt% $Pd-SnO_2$ thick film made with PdCl2 showed gas responses ($R_{air}/R_{gas}$) of 3.7, 5.7 and 9.0 at alcohol concentrations of 10, 50 and 100 ppm, respectively. On the other hand, the prepared 3 wt% $Pd-SnO_2$ thick film with Pd-OAM exhibited very excellent responses of 3.4, 6.8 and 12.2 at the equivalent measurement conditions, respectively. The 3 wt% $Pd-SnO_2$ thick film with Pd-OAM has a specific surface area of $31.39m^2/g$.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.188-192
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• 2013

Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.

• Analytical Science and Technology
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• v.19 no.6
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• pp.535-543
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• 2006

Being used widely in semiconductor and display manufacturing, $NF_3$ is internationally considered as one of the regulated compounds in emission. Numerous companies have been continuously trying to reduce the emissions of $NF_3$ to comply with the global environmental regulation. This work is made to report the destruction and removal efficiency (DRE) of electrically heated scrubbers and the use rate in process chambers installed in three main LCD manufacturing companies in Korea. As the measurement techniques for $NF_3$ emission, mass flow controlled helium gas was continuously supplied into the equipment by which scrubber efficiency is being measured. The partial pressures of $NF_3$ and helium were accurately measured for each sample using a mass spectrometer, as it is emitted from inlet and outlet of the scrubber system. The results show that the DRE value for electrically heated scrubbers installed before 2004 is less than 52 %, while that for the new scrubbers modified based on measurement by scrubber manufacturer has been sigificentely improved upto more than 95 %. In additon, we have confirmed the efficiency depends on such variables as the inlet gas flow rate, water content, heater temperature, and preventative management period. The use rates of $NF_3$ in process chambers were also affected by the process type. The use rate of radio frequency source chambers, built in the $1^{st}$ and $2^{nd}$ generation process lines, was determined to be less than 75 %. In addition, that of remote plasma source chambers for the $3^{rd}$ generation was measured to be aboove 95 %. Therefore, the combined application of improved scrubber and the RPSC process chamber to the semiconductor and display process can reduce $NF_3$ emmision by 99.95 %. It is optimistic that the mission for the reduction of greenhouse gas emission can be realized in these LCD manufacturing companies in Korea.

• Applied Chemistry for Engineering
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• v.29 no.5
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• pp.510-518
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• 2018

Recently, lots of interests have been concentrated on the scrubber system that abates waste gases produced from semiconductor manufacturing processes. An effective design of the thermal decomposition reactor inside a scrubber system is significantly important since it is directly related to the removal performance of pollutants and overall stabilities. In the present study, a computational fluid dynamics (CFD) analysis was conducted to figure out the thermal and flow characteristics inside the reactor of wet scrubber. In order to verify the numerical method, the temperature at several monitoring points was compared to that of experimental results. Average error rates of 1.27~2.27% between both the results were achieved, and numerical results of the temperature distribution were in good agreement with the experimental data. By using the validated numerical method, the effect of the reactor geometry on the heat transfer rate was also taken into consideration. From the result, it was observed that the flow and temperature uniformity were significantly improved. Overall, our current study could provide useful information to identify the fluid behavior and thermal performance for various scrubber systems.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.644-651
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• 2011

Storing hydrogen in solid state hydride is one of the best promising methods for the future hydrogen economy. The total performance of such systems depends on the rate at which the amount of mass and heat migration is supplied to solid hydride. Therefore, an accurate modeling of the heat and mass transfer is of prime importance in optimizing the design of such systems. In this work, Hydrogen storage in Pt-CNTs hydrogen reactor has been intensively investigated by solving 2 dimensional mathematical models. Using a CFD computer software, systematic studies have been performed to elucidate the effect of heat and mass transfer during hydrogen charging periods. It was revealed that the optimized design of hydrogen storage vessel can prevent the increase of system temperature and the charging time due to the convective cooling effects inside the vessels at even high charging pressure. Because none has reported the critical issues of heat and mass transfer for CNT based hydrogen storage system, this work can support the first insight of the optimal design for solid state hydrogen storage system based on CNT in the near future.