• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.13-19
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• 2004

We have been studied on the high concentration ozonized water production technology which substitute for the SPM wet cleaning solution process as the PR strip process after the photolithography process in the semiconductor and flat panel display manufacturing. In this work, we have developed the surface discharge type ozone generator which has the characteristics of the 12 ［wt%］ ozone concentration at the oxygen gas flow of 0.5［ℓ/min］ oxygen per cell and also developed the high efficiency ozone contactor for the mixing ozone gas with deionized water. As the production test results of the ozonized water, we obtained the ozonized water concentration above 80［ppm］ at the 10［wt%］ ozone gas concentration, and also had a good result of the PR strip rate of 147［nm/min］. at the 70［ppm］ ozonized water.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.108-117
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• 2001

A sensor array with 10 discrete sensors integrated on a substrate w3s developed for discriminating the kinds and quantities of inflammable gases, like butane, propane, methane, LPG, carbon monoxide. The sensor array consisted of 10 metal oxide semiconductor gas sensors using the nano-sized $SnO_2$ as base material and had differentiated sensitivity patterns to specific gas. The sensor array was designed with uniform thermal distribution and had also high sensitivity and good reproductivity to low gas concentration through nano-sized sensing materials with different additives. By using the sensing patterns of the sensor array at $400^{\circ}C$, we could reliably discriminate the kinds and quantities of the tested inflammable gases under the lower explosion limit through the principal component analysis(PCA).

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.2
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• pp.1005-1018
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• 2017

This paper proposes an App Visualization (AppV) based on IoT Self-diagnosis Micro Control Unit (ISMCU) for accident prevention. It collects a current status of a vehicle through a sensor, visualizes it on a smart phone and prevents vehicles from accident. The AppV consists of 5 components. First, a Sensor Layer (SL) judges noxious gas from a current vehicle and a driver's driving habit by collecting data from various sensors such as an Accelerator Position Sensor, an O2 sensor, an Oil Pressure Sensor, etc. and computing the concentration of the CO collected by a semiconductor gas sensor. Second, a Wireless Sensor Communication Layer (WSCL) supports Zigbee, Wi-Fi, and Bluetooth protocol so that it may transfer the sensor data collected in the SL to ISMCU and the data in the ISMCU to a Mobile. Third, an ISMCU integrates the transferred sensor information and transfers the integrated result to a Mobile. Fourth, a Mobile App Block Programming Tool (MABPT) is an independent App generation tool that changes to visual data just the vehicle information which drivers want from a smart phone. Fifth, an Embedded Module (EM) records the data collected through a Smart Phone real time in a Cloud Server. Therefore, because the AppV checks a vehicle' fault and bad driving habits that are not known from sensors and performs self-diagnosis through a mobile, it can reduce time and cost spending on accidents caused by a vehicle's fault and noxious gas emitted to the outside.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Applied Chemistry for Engineering
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• v.30 no.5
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• pp.523-529
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• 2019

In this study, we investigated the pretreatment technologies of volatile organic compounds (VOCs) which is a problem as the semiconductor and display industry develops recently. The conventional concentrator used in the direct combustion system, is easily contaminated by the exhaust gas in the manufacturing process of the display, resulting in the low treatment efficiency of generated VOCs. Physical/Chemical analyses of the exhaust gas showed high boiling point and viscosity in addition to a large amount of molecular weight alcohols and oil components. In this study, we tried to treat degrading materials by using the heat exchanger in a pretreatment facility and some materials degrading the concentrator were condensed more than 90%. In addition, it was also confirmed that an auxiliary device of the grease filter could remove the redispersion polymer oil from the heat exchanger.