• Journal of the Korean Institute of Gas
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• v.18 no.5
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• pp.1-5
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• 2014

As high-tech science has developed, the need of semiconductor is required constantly. However, there are many processes which use a great deal of poisonous gas in the semiconductor process, so the dangerousness by a gas leak is latent in these processes. Especially, the accident of toxic gas is almost made by ammonia and chlorine. Therefore this report estimates the damage by the leak of ammonia and chlorine used in LPCVD system.

• 한국가스학회:학술대회논문집
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• 2001.10a
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• pp.291-298
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• 2001

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.39-43
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• 2010

According to recent changes in industry for the semiconductor device, a gap between patterns in wafer is getting narrow. And this narrow gap makes a failure of uniform deposition between center and edge on the wafer. In this paper, for solving this problem, we analyze and manipulate the gas flow inside of the HDP CVD chamber by using CFD(Computational Fluid Dynamics). This simulation includes design manipulations in heights of the chamber and shape of center nozzle in the upper side of the chamber. The result of simulation shows 1.28 uniformity which is lower 3% than original uniformity.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.73-82
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• 1998

In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and $CH_{3}OH$ vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthdsilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced striction and residual product.

• Journal of Sensor Science and Technology
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• v.32 no.2
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• pp.105-109
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• 2023

In this study, we present a power-efficient driving method for gas sensor systems based on the analysis of input signal characteristics. The analysis of the gas sensor output signal characteristics in the frequency domain shows that most of the signal portions are distributed in a relatively low frequency region when extracting the gas sensor signal, which can lead to further performance improvement of the gas sensor system. Therefore, the proposed gas signal extracting technique changes the operating frequency of the read-out circuit based on the frequency characteristics of the output signal of the gas sensor, resulting in a reduction of power consumption at the whole system level. The proposed sensing technique, which can be applied to a general-purpose commercial gas sensor system, was implemented in a printed circuit board (PCB) to verify its effectiveness at the commercial level.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.45-49
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• 2015

Process gases with vapor or liquid phase as well as gas phase may experience alteration in itself or be contaminated in the fluid pipe to the process chamber. And thus it result in as particles or defects on the substrates in semiconductor, LCD, LED manufacturing. Purifiers and filters are used for control of contamination. However, none of detection device is available in the delivery line. In this paper, we propose simple device with lighting and sensing in order to predict contamination of the fluid or the tube wall. For some general purpose gases, it showed constant voltage output regardless of the flow rates. But, the smoke and the moisture in the air lowered the figure due to its concentration. Numerical values for several solid and liquid media were obtained. And, the operating temperature tendency was investigated.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.297-300
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• 2007

There have been 3E problems of energy, economy and environment since the earth has its history. Especially, the energy and environment problems have been getting serious after the modern industry revolution. Therefore, the demand of gas as an eco-friendly energy source is getting increased. With the demand of gas, the installation and use of gas boiler is also increased, so human life injury by the waste gas(CO) of boiler goes on increasing every year. It is the content about a life of the exhaust tube which is used at Gas boiler in this paper. We explain also the course to apply the 6SC(6 Step Creativity) of practical TRIZ and evaluate the re solution.