• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.1-6
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• 2021

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of AZO thin films for the TCO (transparent conducting oxide). For this purpose, AZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 5.0sccm in order to see how the hydrogen gas affects the AZO thin films. AZO thin films deposited at 300℃ showed amorphous structure, whereas IZO thin films deposited at room temperature showed crystalline structure having an (222) preferential orientation. The electrical resistivity of the AZO films deposited at 300℃ was 4.388×10-3Ωcm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.132-135
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• 2022

Recently, with the development of IoT communication technology, products and services that detect and inform the surrounding environment under the name of smart plugs are being developed. In particular, in order to prepare for fire or gas leakage accidents, products that automatically close and warn when abnormal symptoms occur are used. Most of them use methods of collecting, analyzing, and processing information through networks. However, there is a disadvantage that it cannot be used when the network is temporarily in a failed state. In this paper, sensor information was analyzed using deep learning, and a model that can predict abnormal symptoms was learned in advance and applied to MCU. The performance of each model was evaluated by developing firmware that can judge and process on its own regardless of network and applying a predictive model to the MCU after 3 to 120 seconds.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.48-55
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• 2024

Metal-oxide-based semiconductor gas sensors are widely used because of their advantages, such as high response and simple sensing mechanism. Recently, with the rapid progress in sensor networks, computing power, and microsystem technology, sensor applications are expanding to various fields, such as food quality control, environmental monitoring, healthcare, and artificial olfaction. Therefore, the development of highly selective gas sensors is crucial for practical applications. This article reviews the developments in novel sensor design consisting of sensing films and physical and chemical filters for highly selective gas sensing. Unlike conventional sensors, the sensor structures with filters can separate the sensing and catalytic reactions into independent processes, enabling selective and sensitive gas sensing. The main objectives of this study are directed at introducing the role of various filters in gas-sensing reactions and promising sensor applications. The highly selective gas sensors combined with a functional filter can open new pathways toward the advancement of high-performance gas sensors and electronic noses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.190-191
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• 2006

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

• Journal of the Korean Institute of Gas
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• v.26 no.5
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• pp.28-34
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• 2022

Since semiconductor factories are located in densely populated areas, safe handling of hazardous materials handled in the manufacturing process is of utmost importance. In particular, the types of hazardous substances discharged after handling in the semiconductor manufacturing process are very diverse, and the treatment methods such as combustion, absorption and adsorption methods for each material are very complicated. Therefore, in recent semiconductor exhaust treatment processes, two or more treatment methods are applied to one treatment facility, and unexpected accidents occur due to the application of such a complex treatment method. In this study, the cause of accidents in treatment facilities that applied both the scrubber method and the electrostatic precipitation method, which are recent accident cases, are identified, and preventive measures are suggested to find out the points to be noted when applying the complex treatment method.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.