Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Effect of Substrate Temperature and Gas Flow Rate of Atmosphere Gases on Structural and Electrical Properties of AZO Thin Films

기판 온도와 분위기 가스에 따른 AZO 박막의 구조적 및 전기적 특성

  • Hong, Kyoung Lim (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 홍경림 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Received : 2021.01.14
  • Accepted : 2021.03.10
  • Published : 2021.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of AZO thin films for the TCO (transparent conducting oxide). For this purpose, AZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 5.0sccm in order to see how the hydrogen gas affects the AZO thin films. AZO thin films deposited at 300℃ showed amorphous structure, whereas IZO thin films deposited at room temperature showed crystalline structure having an (222) preferential orientation. The electrical resistivity of the AZO films deposited at 300℃ was 4.388×10-3Ωcm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease.

Keywords

References

  1. K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., Vol. 10, Iss. 4, p. 1718 (1992). https://doi.org/10.1116/1.577776
  2. K. Tominaga, T. Udea, T. Ao, A. Katkoka, and I. Mori, "ITO films prepared by facing target system", Thin Solid Films, Vol. 281-282, p. 194 (1996). https://doi.org/10.1016/0040-6090(96)08611-7
  3. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, Vol. 445, p. 245 (2003). https://doi.org/10.1016/S0040-6090(03)01182-9
  4. Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, and Yasutaka Takahashi, "Tin doped indium oxide thin films: Electrical properties", J. Appl. Phys., Vol. 83, pp. 2631 (1998). https://doi.org/10.1063/1.367025
  5. Tania Konry, Robert S. Marks, "Physico-chemical studies of indium tin oxide-coated fiber optic biosensors", Thin Solid Films, Vol. 492, pp. 313 (2005). https://doi.org/10.1016/j.tsf.2005.07.049
  6. J.H.Heo, "Electrical and Structural characteristics of AZO thin films deposited by reactive sputtering", Journal of the Semiconductor & Display Equipment Technology, Vol. 8, No 1, pp.33 (2009)
  7. K.S. Sree Harsha, Principls of Physical Vapor Deposition of Thin films, San Jose State University (2006).
  8. Donald L. Smith., Thin Film Deposition, Mgcraw Hill (2003).
  9. Kiyotaka Wasa, Thin film Materials Technology, Springer (2003).
  10. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, "Electrical and optical properties of amorphous indium zinc oxide films", Thin Solid Films, 496(1), pp.99-103, 2006. https://doi.org/10.1016/j.tsf.2005.08.257
  11. K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, "Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process", Nature Materials, 10, pp. 45-50, 2011. https://doi.org/10.1038/nmat2914