• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.1-237.1
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• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

• Nuclear Engineering and Technology
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• v.54 no.7
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• pp.2586-2591
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• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.9-9
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• 2009

Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.239-251
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• 2016

The potential of nanocomposites have been drawing the intention of the researchers from energy storage to electrical insulation applications. Nanocomposites are known to improve dielectric properties, such as the increase in dielectric breakdown strength, suppressing the partial discharge (PD) as well as space charge, and prolonging the treeing, etc. In this review, different theories have been established to explain the reactions at the interaction zone of polymer matrix and nanofiller; the characterization methods of nanocomposites are also presented. Furthermore, the remarkable findings in the fields of epoxy, cross-linked polyethylene (XLPE), polypropylene and polyvinyl chloride (PVC) nanocomposites are reviewed. In this study, it was observed that there is lack of comparison between results of lab scale specimens and actual field aged cables. Also, non-standardization of the preparation methods and processing parameters lead to changes in the polymer structure and its surface degradation. However, on the positive side, recent attempt of 250 kV XLPE nanocomposite HVDC cables in service may deliver a promising performance in the coming years. Moreover, materials such as self-healing polymer nanocomposites may emerge as substitutes to traditional insulations.

• Progress in Superconductivity and Cryogenics
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• v.24 no.1
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• pp.13-17
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• 2022

The mechanical properties of REBCO coated conductor (CC) tapes under uniaxial tension are mainly determined by the thick layer Components like the substrate and the stabilizer. Depending on the applications of the CC tapes, it is also needed to externally reinforce thin metallic foils to one side or both sides of the CC tapes. This study investigated the effect of additional stabilizer layers or lamination on the electrical resistivity and electromechanical properties in RCE-DR processed GdBCO CC tapes with different structures. The strain/stress tolerance of I_c in differently processed 12 mm-wide REBCO CC tapes under uniaxial tension at 77 K and self-field could be determined by the loading-unloading scheme. As a result, Sn-Cu stabilized CC tape showed a significant decrease in mechanical properties due to its soft but thick stabilizing layer. However, similar electromechanical properties have been observed on both Sn-Cu and Sn-stabilized CC tapes, the I_c degradation behavior was independent of whether the CC tape has an external reinforcement or different stabilizing layers.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.16-24
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• 2022

Applications of REBa₂Cu₃O_7-δ tapes require joints with a simple manufacturing process, low resistance and good mechanical properties. In the present study, we successfully developed a copper diffusion joint between Cu-stabilized REBa₂Cu₃O_7-δ tapes that meets the above requirements without solder simply by applying flux, heat and pressurization. After a 3 min thermocompression process at approximately 150 δ and 336 MPa in air, two tapes were directly connected between Cu stabilizers by copper diffusion, which was proven by microstructure analysis. The specific resistivity of the copper diffusion joint reached 5.8 nΩ·cm² (resistance of 0.4 nΩ for a 306 mm splicing length) at 77 K in the self-field. The axial tensile stress reached 200 N without critical current degradation. The results show promise for the preparation of copper diffusion joints to be used in coils, attached tapes, and wire/cable terminals.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.156-163
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• 2012

Recently, Information Hiding Technology are becoming increasingly demanding in the field of international security, military and medical image This paper proposes data hiding technique utilizing parity checker for gray level image. many researches have been adopted LSB substitution and XOR operation in the field of steganography for the low complexity, high embedding capacity and high image quality. But, LSB substitution methods are not secure through it's naive mechanism even though it achieves high embedding capacity. Proposed method replaces LSB of each pixel with XOR(between the parity check bit of other 7 MSBs and 1 Secret bit) within one pixel. As a result, stego-image(that is, steganogram) doesn't result in high image degradation. Eavesdropper couldn't easily detect the message embedding. This approach is applying the concept of symmetric-key encryption protocol onto steganography. Furthermore, 1bit of symmetric-key is generated by the self-reference of each pixel. Proposed method provide more 25% embedding rate against existing XOR operation-based methods and show the effect of the reversal rate of LSB about 2% improvement.

• Journal of the Korean Geosynthetics Society
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• v.8 no.4
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• pp.9-17
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• 2009

This research was intended to verify the stability of landfill final cover using SRSL(Self Recovering Sustainable Liner) with regard to differential settlements due to the degradation of waste and so on in a waste landfill. Numerical analysis was performed using FLAC 2D software program with input parameters based on soil characteristic tests and reference data after the blank was designed in order to represent the decomposition condition of waste. The maximum settlement of landfill cover was calculated to investigate the structural stability of landfill cover with the different condition of settlement width, settlement depth, and number of differential settlements. The allowable maximum deformation rate of SRSL, which was calculated using field permeability tests, was 6 mm. The analysis showed that SRSL was stable in case of a differential settlement width not exceeding 24.5% of total cover width.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.