• Journal of Powder Materials
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• v.30 no.4
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• pp.318-323
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• 2023

The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi₂Te₃ materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi_1.7Sb_0.3Te₃ (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.246-252
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• 2000

Thermoelectric properties of the $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy, prepared by mechanical alloying and hot pressing, were investigated with the variation of the hot-pressing temperature ranging from $300^{\circ}C$ to $550^{\circ}C$. Contrary to the p-type behavior of single crystal, the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy exhibited n-type conduction without addition of donor dopant. When the $Bi_2(Te_{0.85}Se_{0.15})_3$ powders were annealed in $(50{\%}\;H_2+50{\%}\;Ar)$ atmosphere, the hot-pressed specimens exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Figure-of-merit of the hot-pressed $Bi_2(Te_{0.85}Se_{0.15})_3$ alloy was improved by hot pressing at temperatures above $450^{\circ}C$, and the maximum value of $1.92{\times}10^{-3}/K$ was obtained for the specimen hot-pressed at $550^{\circ}C$.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.251-258
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• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.33-38
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• 2011

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3$ powers were fabricated by mechanical alloying and hot-pressed at temperatures of $350{\sim}550^{\circ}C$. Themoelectric properties of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ were characterized as a function of the hot-pressing temperature. With increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$, the Seebeck coefficient and the electrical resistivity decreased from 237 ${\mu}V/K$ to 210 ${\mu}V/K$ and 2.25 $m{\Omega}-cm$ to 1.34 $m{\Omega}-cm$, respectively. The power factor of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ became larger from $24.95{\times}10^{-4}W/m-K^2$ to $32.85{\times}10^{-4}W/m-K^2$ with increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$. Among the specimens hot-pressed at $350{\sim}550^{\circ}C$, the $(Bi_{0.2}Sb_{0.8})_2Te_3$ hot-pressed at $500^{\circ}C$ exhibited the maximum dimensionless figure-of-merit of 1.09 at $25^{\circ}C$ and 1.2 at $75^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.9-15
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• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.1-6
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• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.51-57
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• 2010

Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1055-1060
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• 1998

Thermoelectric properties of ($Pb_{1-x}Sn_x$)Te ($0\leq{x}\leq{0.4}$) alloys, fabricated by mechanical alloying and hot pressing, were investigated with variation of the SnTe content. For the hot-pressed PbTe and ($Pb_{0.9}Sn_{0.1}$)Te. transition from p-type to n-type occurred at $200^{\circ}C$ and $300^{\circ}C$, respectively. However, the specimens containing SnTe more than 0.2mole exhibited p-type conduction up to 450'C. In extrinsic conduction region, the Seebeck coefficient and electrical resistivity of the hot-pressed ($Pb_{1-x}Sn_x$)Te decreased with increasing the SnTe content. The temperature at which the hot-pressed (Pbl-,Sn,)Te exhibited a maximum figure-of-merit was shifted to higher temperature with increasing the SnTe content The hot-pressed (Pbo ,Sno dTe exhibited a maximum figure-of-merit of $0.68\times10_{-3}/K$ at $200^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.