Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.02a
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- Pages.87-87
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- 2011
Electrical and Optical Properties of P-type Amorphous Oxide Semiconductor Mg:$ZnCo_2O_4$ Thin-Film
- Lee, Chil-Hyoung (Opto-electronic Materials Center, Korea Institute of Science and Technology) ;
- Choi, Won-Kook (Opto-electronic Materials Center, Korea Institute of Science and Technology) ;
- Lee, Jeon-Kook (Opto-electronic Materials Center, Korea Institute of Science and Technology) ;
- Choi, Doo-Jin (Department of Advanced Materials Engineering, Yonsei University) ;
- Oh, Young-Jei (Opto-electronic Materials Center, Korea Institute of Science and Technology)
- Published : 2011.02.09
Abstract
Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg: