• 제목/요약/키워드: scanning probe microscope

검색결과 233건 처리시간 0.029초

Silicon Nitride Cantilever Arrays Integrated with Si Heater and Piezoelectric Sensors for SPM Data Storage Applications

  • Nam, Hyo-Jin;Jang, Seong-Soo;Kim, Young-Sik;Lee, Caroline-Sunyong;Jin, Won-Hyeog;Cho, Il-Joo;Bu, Jong-Uk
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권1호
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    • pp.24-29
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    • 2005
  • Silicon nitride cantilevers integrated with silicon heaters and piezoelectric sensors were developed for the scanning probe microscope (SPM) based data storage application. These nitride cantilevers are expected to have better mechanical stability and uniformity of initial bending than the previously developed silicon cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film and the sensitivity of the piezoelectric sensor was 0.615 fC/nm, meaning that indentations less than 20 nm in depth can be detected. For high speed operation, $128{\times}128$ cantilever array was developed.

Interfacial Energetics of All Oxide Transparent Photodiodes

  • Yadav, Pankaj;Kim, Hong-sik;Patel, Malkeshkumar;Kim, Joondong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.390.1-390.1
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    • 2016
  • The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

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Layer Controlled Synthesis of Graphene using Two-Step Growth Process

  • Han, Jaehyun;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.221.2-221.2
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    • 2015
  • Graphene is very interesting 2 dimensional material providing unique properties. Especially, graphene has been investigated as a stretchable and transparent conductor due to its high mobility, high optical transmittance, and outstanding mechanical properties. On the contrary, high sheet resistance of extremely thin monolayer graphene limits its application. Artificially stacked multilayer graphene is used to decrease its sheet resistance and has shown improved results. However, stacked multilayer graphene requires repetitive and unnecessary transfer processes. Recently, growth of multilayer graphene has been investigated using a chemical vapor deposition (CVD) method but the layer controlled synthesis of multilayer graphene has shown challenges. In this paper, we demonstrate controlled growth of multilayer graphene using a two-step process with multi heating zone low pressure CVD. The produced graphene samples are characterized by optical microscope (OM) and scanning electron microscopy (SEM). Raman spectroscopy is used to distinguish a number of layers in the multilayer graphene. Its optical and electrical properties are also analyzed by UV-Vis spectrophotometer and probe station, respectively. Atomic resolution images of graphene layers are observed by high resolution transmission electron microscopy (HRTEM).

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Octanethiol 산화 방지 처리된 구리 나노분말의 분산 용액 제조

  • 김동권;권진형;조동국;김영석;이선영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.48.2-48.2
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    • 2009
  • 구리 나노분말은 우수한 전기전도도와 상대적으로 저렴한 가격으로 주목을 받고 있어이를 이용한 다양한 기술들이 개발 중에 있다. 이들 중 잉크젯 프린팅용 구리 나노잉크는 기존의 포토리소그래피방식의 복잡한 공정단계와 이로 인한 단가 인상을 해결할 수 있는 공정으로 기대되는 잉크젯 프린팅에 구리를 사용할 수 있게 해주어 광범위한 응용이가능할 것으로 기대되어 많은 연구가 진행되고 있는 분야이다. 실제로 구리 나노분말의 이용하게 될 때에있어서 어려운 점 중 하나가 바로 빠른 표면 산화의 문제이다. 이를 막기 위해 본 연구에서는 건식 분말코팅 방법을 이용해 octanethiol 자기조립박막을 구리 표면에 부착한 분말을 사용하여 구리 나노분말용액을 제조하는 실험을 수행하였다. 건식 분말 코팅에 의해 산화 방지막이 부착된 분말을 표면 활성제인 Diethanolamine을 이용해 안정적으로 분산시켜 잉크로 사용이 가능한 용액을 제조해 보고, 분산된 용액의 안정도를 확인하기 위해 zetapotential analyzer를이용하여 분산도를 분석하였다. 또한 분산된 용액의 활용 실험을 위해 유리 기판에 바른 용액을 질소 분위기의튜브로에서 $250^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$의 온도에서 30분간 소결을 진행한 후 probe-station을 이용하여 전기 전도도를 측정하였다. 이렇게제작된 샘플은 Scanning Electronic Microscope 를 이용하여 소결된 상태의 표면의 사진을 찍어 서로 비교해보았다. $300^{\circ}C$에서 소결한 시편부터 소결이 시작되어 $400^{\circ}C$에서 소결한 시편은 다량의 소결목이 형성되었다.

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NiCr 박막의 발열 특성 개선을 위한 순차적 이중 열처리 방법 연구 (Gradational Double Annealing Process for Improvement of Thermal Characteristics of NiCr Thin Films)

  • 권용;노효섭;김남훈;최동유;박진성
    • 한국전기전자재료학회논문지
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    • 제18권8호
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    • pp.714-719
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    • 2005
  • NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

Characterization of tantalum silicide films formed by composite sputtering and rapid thermal annealing

  • 조현준;백수현;최진석;마재평;고철기;김동원
    • 한국재료학회지
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    • 제2권1호
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    • pp.27-34
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    • 1992
  • Tantalum silicide films are prepared from a composite $TaSi_{28}$ target source and subjected to rapid thermal annealing($500-1100^{\circ}C$, 20sec) in Ar ambient. The formation and the properties of tantalum silicides have been investigated by using 4-point probe, x-ray diffraction, scanning electron microscope(SEM), Auger electron spectroscope(AES), and ${\alpha}$-step. It has been found that the sample annealed above $700^{\circ}C$ forms a polycrystalline $TaSi_2$ phase, and grains grow in granular form regardless of the kind of substrates. The mechanism of the formation of tantalum silicide is the nucleation and growth by Ta-Si short range reaction. The tantalum silicide film has the relatively low resistivity($70-72.5{\mu}{\Omega}-cm$) and smooth surface roughness.

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Kinetic Spray 공정으로 제조된 Nb 코팅 소재의 미세조직 및 물성에 미치는 열간 등압 성형(HIP)의 영향 (Effect of Hot Isostatic Pressing on the Microstructure and Properties of Kinetic Sprayed Nb Coating Material)

  • 이지혜;양상선;이기안
    • 한국분말재료학회지
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    • 제23권1호
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    • pp.15-20
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    • 2016
  • Niobium is one of the most important and rarest metals, and is used in the electronic and energy industries. However, it's extremely high melting point and oxygen affinity limits the manufacture of Nb coating materials. Here, a Nb coating material is manufactured using a kinetic spray process followed by hot isotactic pressing to improve its properties. OM (optical microscope), XRD (X-ray diffraction), SEM (scanning electron microscopy), and Vickers hardness and EPMA (electron probe micro analyzer) tests are employed to investigate the macroscopic properties of the manufactured Nb materials. The powder used to manufacture the material has angular-shaped particles with an average particle size of $23.8{\mu}m$. The porosity and hardness of the manufactured Nb material are 0.18% and 221 Hv, respectively. Additional HIP is applied to the manufactured Nb material for 4 h under an Ar atmosphere after which the porosity decreases to 0.08% and the hardness increases to 253 Hv. Phase analysis after the HIP shows the presence of only pure Nb. The study also discusses the possibility of using the manufactured Nb material as a sputtering target.

Moth-eye 패턴이 형성된 고 투과성 전도성 폴리머 필름 제작

  • 민병학;조중연;이성환;한강수;이헌
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.63.1-63.1
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    • 2011
  • 현재 상용 중인 터치패널의 전도성 필름으로는 ITO가 주로 사용된다. 하지만, 디스플레이 기기의 수요 증가와 Indium의 고갈로 인한 ITO의 수요 공급 불균형으로 인한 원가 문제가 대두되고 있다. 이 때문에, Carbon nanotube (CNT), Graphene 등의 대체 투명 전도성 물질들이 연구 중에 있지만 투과율 및 저항 문제 등이 문제가 되고 있다. 본 연구에서는 투명 전도성 필름의 광 투과도 향상을 위하여, 자외선 경화 레진을 이용하여, 전도성 필름 상에 모스 아이 레진 패턴을 형성하는 실험을 진행하였다. 패턴이 형성된 이후에는 Scanning Electro Microscope를 통하여 패턴의 형성 유무를 관찰하였고, UV-vis와 4-point probe를 이용하여 투과도 및 저항을 측정하였다. 실험 결과 모스아이패턴을 필름에 패터닝 함으로써, 전체적으로 투과도가 증가된다는 것을 확인 할 수 있었으며, 투과도의 증가폭은 단면 패터닝보다는 양면 패터닝을 한 경우가 높았다. 그리고 저항 변화에 있어서는 패턴이 있는 부분의 경우 표면 잔여층으로 인하여 급격하게 증가하였지만, 전도면 반대편에 패터닝을 진행한 경우 거의 변화하지 않았다는 것을 확인할 수 있었다. 결과적으로, 본 연구를 통해 나노 임프린트 리소그래피를 통해 전도성 폴리머 필름 상부에 모스아이나노 구조물을 제작하였고, 이를 통해 기존의 전도성 폴리머 필름의 낮은 투과율을 향상시킬 수 있었다.

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SABiT 공법적용 인쇄회로기판의 은 페이스트 범프 크기 및 제작 조건에 따른 전기 저항 특성 (Characterization of Electrical Resistance for SABiT Technology-Applied PCB : Dependence of Bump Size and Fabrication Condition)

  • 송철호;김영훈;이상민;목지수;양용석
    • 한국전기전자재료학회논문지
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    • 제23권4호
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    • pp.298-302
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    • 2010
  • We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

Micro/nano Tribological and Water Wetting Characteristics of Ion Beam Treated PTFE Surfaces

  • Yoon, Eui-Sung;Oh, Hyun-Jin;Yang, Seung-Ho;Kong, Hosung
    • KSTLE International Journal
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    • 제3권1호
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    • pp.12-16
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    • 2002
  • Micro/nano tribological and water wetting characteristics of ion beam treated PTFE (polytetrafluoroethylene) surfaces were experimentally studied. The ion beam treatment was performed with a hollow cathode ion gun at different argon ion dose conditions in a vacuum chamber to modify the topography of PTFE surface. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribe tester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. Results showed that surface roughness increased with the argon ion dose. Water wetting angle of the ion beam treated samples increased with the ion dose, so the surface shows an ultra-hydrophobic nature. Micro-adhesion and micro-friction depend on the wetting characteristics of the PTFE samples. However, nano-tribological characteristics showed different results. The scale effect of surface topography on tribological characteristics was discussed. Also, the water wetting characteristics of modified PTFE samples were discussed in terms of the surface topographic characteristics.