• ETRI Journal
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• 제28권6호
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• 한국생산제조학회지
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• 제24권2호
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• pp.155-159
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• 2015

Light emitting devices (LEDs) are widely used in the liquid crystal display (LCD) industry, especially for LCD back light units. Therefore, much research has been performed to minimize manufacturing costs. However, the current process does not process LED chips from broken substrates even though the substrate is expensive sapphire wafer. This is because the broken substrates lose their alignment marks. After pre-processing, LED dies are glued onto blue tape to continue post-processing. If auxiliary alignment marks are stamped on the blue tape, post-processing can be performed using some of the LED dies from broken substrates. In this paper, a novel stamper module that can stamp the alignment mark on the blue tape is proposed, designed, and fabricated. In testing, the stamper was reliable even after a few hundred stamps. The module can position the stamp and apply the pattern effectively. By using this module, the LED industry can reduce manufacturing costs.

• 한국광학회지
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• 제17권1호
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• pp.75-80
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• 2006

펨토초 레이저 펄스에 의한 포토폴리머의 투과율 변화와 Eu 이온과 Sm 이온이 첨가된 sodium borate 유리의 형광파장의 변화를 이용하여 3차원 광메모리 가능성을 연구하였다. 780 nm의 모드잠금 타이사파이어 레이저를 이용하여 이광자흡수에 의해 DuPont 포토폴리머에서는 투과율을 변화시켰으며 이로 인해 $0.6{\mu}m$ 크기의 비트를 형성하였다. Sm 이온이 첨가된 재료에서는 이광자흡수로 인한 Sm 이온의 광환원을 이용하여 $4{\mu}m$ 크기의 형광 비트를 얻을 수 있었고 다층구조에서의 비트 형성을 시도하였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.272-275
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• 2000

We investigated a resistive superconducting fault current limiter (SFCL) fabricated using YBCO thin films on 2-inch diameter sapphire substrates. Nearly identical SFCL units were prepared and tested. The units were connected in series and parallel to increase the current and voltage ratings. A serial connection of the units showed significantly unbalanced power dissipation between the units. This imbalance was removed by introducing a shunt resistor to the firstly quenched unit. Parallel connection of the units increased the current rating. An SFCL module of 4 units in parallel, each of which has minimum quench current 25 Ap, was produced and successfully tested at a 220 V circuit. From the resistance increase, we estimated that the film temperature increases to 200 K in 5 msec, and 300 K in 120 msec. Successive quenches revealed that this system is stable without degradation in the current limiting capability under such thermal shocks as quenches at 220 V.

• Progress in Superconductivity
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• 제6권2호
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• pp.108-112
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• 2005

We investigated temperature behavior of superconducting fault current limiters (SFCLs) during quenches. Knowledge on temperature behavior during quenches is important to the design of SFCLs, because the temperature of SFCLs is related to their stability. SFCLs were fabricated by patterning $Au/YBa_2Cu_3O_7$ thin films grown on sapphire substrates into meander lines by photolithography. A gold film grown on the back side of the substrate was patterned into a meander line, and used as a temperature sensor. The front meander line was subjected to simulated AC fault currents, and the back line to DC current. They were immersed in liquid nitrogen during the experiment for effective cooling. Overall, temperature at the back side of SFCLs was close to that at the front side. It was closer at the beginning of faults, and at lower applied voltages. Temperature distribution at the back side was even except at the edge, as at the front side. These results tell that the whole SFCL was heated to similar degree during quenches, and that effective cooling of SFCLs at the back side is as important to the stability of SFCLs as at the front side. The results could be explained with the concept of heat transfer within the film.

• Progress in Superconductivity
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• 제5권2호
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• pp.118-123
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• 2004

We investigated quench distribution in AU/YBCO thin film meander lines with a heater. Quench distribution during faults is important for superconducting fault current limter applications, because uniform quench allows application of higher voltages across the meander lines. AU/YBCO thin films grown on sapphire substrates were patterned into meander lines by photolithography. Gold films grown on the rear sides of the substrates were also patterned into meander lines, and used as heaters. Meander lines on the front and the rear sides were connected in parallel. The meander lines were subjected to simulated AC fault currents for quench measurements during faults. They were immersed in liquid nitrogen during the experiment for effective cooling. Resistance of the AU/YBCO meander lines initially increased more rapidly with the rear heater than without, and consequently the fault current was limited more. The resistance subsequently became similar, The resistance distribution was more uniform with the heater, especially during the initial quench. Quench was completed more uniformly and significantly earlier. This resulted in uniform distribution of dissipated power. These results could be explained with the concept of quench propagation, which was accelerated by heat transfer across the substrate from the rear heater.

• 한국세라믹학회지
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• 제45권7호
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• pp.405-410
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• 2008

Ceramics are widely used as plasma resistant materials in semiconductor industries. However, the plasma erosion resistance has not been properly evaluated in terms of microstructural changes during the exposure to plasma. In this study, microstructure developments of $Al_2O_3$ were investigated under the fluorine plasma conditions. In polycrystalline alumina, uniform erosion throughout the specimen as well as spatially distributed local erosion were observed. Local erosion was much more severe in lower purity alumina. In contrast to the polycrystalline alumina, only uniform erosion was observed in single crystalline sapphire. These specimens, however, had practically the same erosion depth, which results in the incorrectly similar plasma resistance. This implies that the plasma erosion resistance of ceramics should be evaluated in terms of the microstructural changes, as well as the conventionally accepted erosion depth.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.79-86
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• 2006

N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.

• 한국기계가공학회지
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• 제11권2호
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• pp.144-151
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• 2012

Polishing is not only one of the most frequently adopted processes in modern industries, but also the most critical one to the surface quality of the products such as semi conductor wafers and LED sapphire wafers. With the required specifications for the wafer surface quality getting more and more strengthened, the manufacturers are spending huge amount of cost to renew the machine to meet the enhanced surface specifications. Surface qualities of the wafers are mostly damaged by the structural vibrations of the polishing machines. In this paper, the dynamic characteristics of a wafer polishing machine have been analyzed through the frequency response test and the computer simulation. And the supporting structure of a polishing machine has been investigated to minimize the vibration transmissions, to improve the stability of the machine and further to reduce the defects of the polished products. The result of the study shows that simple design modifications of the supporting structure without altering the main structure of the machine can substantially suppress the vibrations of the machine with negligible expenses.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.315.2-315.2
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• 2014

Pt-functionalized ZnS nanowires were synthesized on Au-deposited c-plane sapphire substrates by thermal evaporation of ZnS powders followed by wet Pt coating and annealing. The $NO_2$ gas sensing properties of multiple-networked Pt-functionalized ZnS nanowire sensors were examined. Scanning electron microscopy showed the nanowires with diameters of 20-80 nm. Transmission electron microscopy and X-ray diffraction showed that the nanowires were wurtzite-structured ZnS single crystals. The Pt-functionalized ZnS nanowire sensors showed enhanced sensing performance to $NO_2$ gas at $150^{\circ}C$ compared to pristine ZnS nanowire sensors. Pristine and Pt-functionalized ZnS nanowire sensors showed responses of 140-211% and 207-488%, respectively, to 1-5 ppm $NO_2$, which are better than or comparable to those of many oxide semiconductor sensors. In addition, the underlying mechanism of the enhancement of the sensing properties of ZnS nanowires by Pt functionalization is discussed.