• Journal of the Korea Convergence Society
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• v.11 no.7
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• pp.157-162
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• 2020

In recent years, laser induced graphene process have been intensively studied for eco-friendly electronic device such as flexible electronics or thin film based energy storage devices because of its simple and effective process. In order to increase the performance and efficiency of an electronic device using such a graphene patterned structure, it is essential to study an optimized laser patterning condition as small as possible linewidth while maintaining the graphene-specific 2-dimensional characteristics. In this study, we analyzed to find the optimal line pattern by using a Ti:sapphire femtosecond laser based photo-thermal reduction process. we tuned intensity and scanning speed of laser spot for generating effective graphene characteristic and minimum thermal effect. As a result, we demonstrated the reduced graphene pattern of 30㎛ in linewidth by using a focused laser beam of 18㎛ in diameter.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.325-330
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• 2004

We fabricated a vacuum ultraviolet spectre-reflectometer which consists of a deuterium light source, a vacuum monochromator, and a sample chamber and detector module. The operation was performed in the ultraviolet spectral ranges between 115 nm and 330 nm at the vacuum pressure of 3.0 ${\times}$ 10$^{-4}$ Pa. The wavelength of the vacuum monochromator was calibrated with the line spectrum of a low pressure Mercury lamp of 253.652 nm and 184.95 nm wavelengths, and its resolution was 0.012 nm, and the precision of wavelength was $\pm$ 0.03 nm. With this reflectometer and a deuterium lamp, we measured the spectral regular transmittance and reflectance of materials(MgF$_2$, CaF$_2$, BaF$_2$, SiO$_2$, Sapphire) used as optical components over the spectral range between 115 nm and 230 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.319-323
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• 2001

In order to investigate the effect of thickness on the properties of ZnO thin films, a series of films having different thickness were deposited on (0001) sapphire by using pulsed laser deposition(PLD). SEM and XRD analyses showed that, as the film thickness increases, the grain size increased and the crystallinity improved. Room-temperature PL spectra also exhibited that the intensities of both ultraviolet and deep level emission Peaks increased as the film thickness increased. Hall measurements at room- temperature revealed that, as the film thickness changes from 400 to 4000 , the carrier concentration of the film showed sharp decrease, which that of thicker film gradually saturated. Therefore, it is concluded that the strain due to the lattice mismatch between substrate and film is fully relaxed around the thickness of 4000 .

• Progress in Superconductivity
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• v.12 no.1
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• pp.62-67
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• 2010

We investigated the voltage applicable to $Au/YBa_2Cu3O_7$ (YBCO) meander lines. The meander line was fabricated by patterning Au/YBCO thin films grown on sapphire substrates by photolithography. It was subjected to simulated AC fault currents, and the resistance was measured and analyzed. The samples were immersed in liquid nitrogen during the experiment for effective cooling. The voltage applicable to the meander lines depended on the fault duration. Dependence was strong at short fault durations, and weak at long durations. When the voltage was plotted as a function of the fault duration on a log-log scale, data fell more or less on straight lines for all meander lines. In other words, the voltage applicable to Au/YBCO meander lines on sapphire substrates was inversely proportional to $t^b$, where t is the fault duration and b ranges from 0.4 to 0.5. The results were analyzed quantitatively with the concept of heat balance. Under adiabatic condition, the voltage is to be inversely proportional to $t^{0.5}$ for all samples. Less value of b for some samples is thought to be due to cooling of the samples by liquid nitrogen.

• Progress in Superconductivity
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• v.8 no.2
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• pp.143-151
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• 2007

Accurate measurements of the microwave surface resistance (Rs) of high temperature superconductor (HTS) films are important with regard to applications of HTS materials for wireless communications. As the surface resistance values of HTS films are usually extracted from the measured unloaded quality factor ($Q_0$) of resonators made of HTS films, it is essential to measure the resonator $Q_0$ with accuracy. The $TE_{011}\;mode\;Q_0$ of sapphire resonators with the endplates made of $YBa_2Cu_3O_{7-{\delta}}$(YBCO) film on $LaAlO_3$ is measured by using the S-parameter circle-fit method at a frequency of about 19.6 GHz and temperatures of 30 K to 90 K, which is compared with the measured values by using the Lorentzian-fit method. Good agreements are found between the two sets of $Q_0$ values measured by using the two different methods whether the resonator is used in a weak-coupling scheme or a strong-coupling scheme, showing reliability of both methods fur measuring the resonator $Q_0$ accurately. The $Q_0$ of sapphire resonators with a gap between the top plate and the rest of the resonator is also discussed.

• Tribology and Lubricants
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• v.33 no.5
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• pp.228-233
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• 2017

Chemical Mechanical Polishing of chemically stable sapphire substrates is dominantly affected by the mechanical processing of abrasives, in terms of the material removal rate. In this study, we investigated the effect of electrostatic force between the abrasives and substrate, on the polishing. If potassium chloride (KCl) is added to slurry, water molecules are decomposed into $H^+$ and $OH^-$ ions, and the amount of ions in the slurry changes. The zeta potential of the abrasives decreases with an increase in the amount of $H^+$ ions in the stern layer; consequently, the electrostatic force between the abrasives and substrate decreases. The change in zeta potential of abrasives in the slurry is affected by the slurry pH. In acidic zones, the amount of ions bound to the abrasives increases if the amount of $H^+$ ions is increased by adding KCl. However, in basic zones, there is no change in the corresponding amount. In acidic zones, zeta potential decreases as molar concentration of potassium increases; however, it does not change significantly in basic zones. The removal rate tends to decrease with increase in molar amount of potassium in acidic zones, where zeta potential changes significantly. However, in basic zones, the removal rate does not change with zeta potential. The tendencies of zeta potential and that of the frictional force generated during polishing show strong correlation. Through experiments, it is confirmed that the contact probability of abrasives changes according to the electrostatic force generated between the abrasives and substrate, and variation in removal rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Applied Microscopy
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• v.36 no.3
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.