• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.7-7
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• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Journal of Yeungnam Medical Science
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• v.24 no.2
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• pp.97-106
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• 2007

Functional electrical stimulation (FES) has developed over the last 35 years to become a scientifically, technologically and clinically recognized field of interest in clinical medicine. FES has been applied to locomotion, grasping, ventilation, incontinence, and decubitus healing. However, all of these achievements illustrate the initial applications of FES; its true potential has not yet been realized. Recently, FES systems, which are miniaturized stimulation devices, have been utilized in the clinical setting. However, because the stimulating electrodes of the current FES devices are percutaneous electrodes, which are susceptible to wire breakage, and skin infection an implantable FES stimulating electrode has been introduced in the U.S. and Japan. In the present study, an external power supply method using radio frequency (RF) coupling and data transmission was developed for the control of the implantable FES device. In addition, we review the current understanding of FES devices and their application in clinical medicine.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.121.1-121.1
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• 2014

Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

• The Korean Journal of Pain
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• v.19 no.2
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• pp.244-248
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• 2006

Radiofrequency lesioning is a valuable tool for third occipital headache. Relative to most neural targets, a radiofrequency lesion is very small. Reliable pre-operative diagnosis of the nociceptive source is critical, as inappropriately placed lesions will not modulate pain. Knowledge of the anatomical courses of nerves and extremely precise electrode placement are required for accurate lesioning. This report describes our experience with RF lesioning in the treatment of chronic pain in two patients who suffered from third occipital headaches. In one patient, satisfactory improvement of the pain was observed after 10 months of follow up.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.318-318
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• 2011

Electrosurgery has been widely used in surgical procedures for many years. The surgical procedure using radiofrequency power generated occasionally sparks causing electrical stimulations. According to a paper of commercialized APC (Argon Plasma Coagulation) in the gastrointestinal endoscopy, Patients treated by APC had experienced pain and neuromuscular stimulation. This study aimed to investigate the electrosurgery sparks. In this experiment, current threshold of electrosurgery using rf was investigated. Sparks analogous to surgical situation was generated and measured the I-V figure. Asymmetric current, observed by other researchers, was also measured. This could be explained by difference between positive phase and negative phase. Furthermore, a method was developed to remove asymmetric current and to make safer device for surgical field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.295-299
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• 1999

The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.