Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Resistivity Properties of SrTiO$_3$ Thin Films by Sputtering method.

스퍼터링 방법을 이용한 SrTiO$_3$박막의 저항을 특성

  • 이우선 (조선대학교 전기공학과) ;
  • 손경춘 (조선대학교 전기공학과) ;
  • 서용진 (목포 대불대학교 전기공학과) ;
  • 김남오 (조선대학교 전기공학과 공학박사) ;
  • 이경섭 (동신대학교 전기전자공학과) ;
  • 김형곤 (조선이공대학 전기과)
  • Published : 1999.05.01
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Abstract

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

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